KR20140034262A - 지지 기판에 접합된 발광 디바이스 - Google Patents

지지 기판에 접합된 발광 디바이스 Download PDF

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Publication number
KR20140034262A
KR20140034262A KR1020137034940A KR20137034940A KR20140034262A KR 20140034262 A KR20140034262 A KR 20140034262A KR 1020137034940 A KR1020137034940 A KR 1020137034940A KR 20137034940 A KR20137034940 A KR 20137034940A KR 20140034262 A KR20140034262 A KR 20140034262A
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KR
South Korea
Prior art keywords
light emitting
support substrate
emitting device
semiconductor light
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137034940A
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English (en)
Korean (ko)
Inventor
제롬 찬드라 바트
살만 아크람
다니엘 알렉산더 스테이거왈드
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코닌클리케 필립스 엔.브이.
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Publication of KR20140034262A publication Critical patent/KR20140034262A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020137034940A 2011-06-01 2012-05-22 지지 기판에 접합된 발광 디바이스 Ceased KR20140034262A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161491920P 2011-06-01 2011-06-01
US61/491,920 2011-06-01
PCT/IB2012/052556 WO2012164437A2 (en) 2011-06-01 2012-05-22 Light emitting device bonded to a support substrate

Publications (1)

Publication Number Publication Date
KR20140034262A true KR20140034262A (ko) 2014-03-19

Family

ID=46331645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137034940A Ceased KR20140034262A (ko) 2011-06-01 2012-05-22 지지 기판에 접합된 발광 디바이스

Country Status (8)

Country Link
US (1) US20140077246A1 (enExample)
EP (1) EP2715807B8 (enExample)
JP (3) JP2014515560A (enExample)
KR (1) KR20140034262A (enExample)
CN (2) CN103563099A (enExample)
RU (1) RU2604956C2 (enExample)
TW (1) TWI617055B (enExample)
WO (1) WO2012164437A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160124456A (ko) * 2015-04-20 2016-10-28 엘지이노텍 주식회사 발광소자
KR102552204B1 (ko) 2022-11-08 2023-07-06 박영우 Led를 이용한 기능성 수중 촬영시스템

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650171B (zh) 2011-07-15 2018-09-18 亮锐控股有限公司 将半导体装置结合到支持衬底的方法
US20140209961A1 (en) * 2013-01-30 2014-07-31 Luxo-Led Co., Limited Alternating current light emitting diode flip-chip
KR20160032221A (ko) 2013-07-18 2016-03-23 코닌클리케 필립스 엔.브이. 발광 디바이스들의 웨이퍼의 다이싱
JP6256026B2 (ja) * 2014-01-17 2018-01-10 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102014116141B4 (de) * 2014-11-05 2022-07-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
FR3033939B1 (fr) 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente
DE102015113310B4 (de) * 2015-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102016113193A1 (de) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Bauteil mit geometrisch angepasster Kontaktstruktur und dessen Herstellungsverfahren
US10186478B2 (en) 2016-12-30 2019-01-22 Texas Instruments Incorporated Packaged semiconductor device with a particle roughened surface
JP6900571B2 (ja) * 2017-08-03 2021-07-07 ルミレッズ リミテッド ライアビリティ カンパニー 発光装置を製造する方法
TWI642335B (zh) * 2017-12-11 2018-11-21 欣興電子股份有限公司 電路板及其製造方法
EP3528296B1 (en) * 2018-02-16 2020-06-03 Nichia Corporation Light emitting element and light emitting device
US10374386B1 (en) * 2018-06-07 2019-08-06 Finisar Corporation Chip on carrier
JP7385111B2 (ja) * 2019-09-26 2023-11-22 日亜化学工業株式会社 発光装置の製造方法及び発光装置
RU195271U1 (ru) * 2019-11-25 2020-01-21 федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" Арсенид-галлиевый магнитоэлектрический диод
DE102021119003A1 (de) * 2021-07-22 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterelement und optoelektronisches bauelement

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391397A (en) * 1994-04-05 1995-02-21 Motorola, Inc. Method of adhesion to a polyimide surface by formation of covalent bonds
DE59809873D1 (de) * 1997-05-27 2003-11-13 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines lichtemittierenden bauelementes
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP4447806B2 (ja) * 2001-09-26 2010-04-07 スタンレー電気株式会社 発光装置
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ledチップ
US6876008B2 (en) 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
TWI246783B (en) * 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US9368428B2 (en) * 2004-06-30 2016-06-14 Cree, Inc. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
EP1774598B1 (en) * 2004-06-30 2011-09-14 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP4535834B2 (ja) * 2004-10-18 2010-09-01 パナソニック電工株式会社 発光素子とその製造方法
TWI244228B (en) * 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
CN101512783B (zh) * 2006-05-02 2011-07-27 三菱化学株式会社 半导体发光元件
CN100505164C (zh) * 2006-06-28 2009-06-24 财团法人工业技术研究院 氮化物半导体衬底的制造方法及复合材料衬底
JP2006279080A (ja) * 2006-07-10 2006-10-12 Sanyo Electric Co Ltd 発光素子ウエハの固定方法
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
TWI495141B (zh) * 2008-08-01 2015-08-01 晶元光電股份有限公司 晶圓發光結構之形成方法及光源產生裝置
TW201010122A (en) * 2008-08-21 2010-03-01 Univ Nat Central Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP5518502B2 (ja) * 2009-01-27 2014-06-11 シチズン電子株式会社 発光ダイオードの製造方法
KR101007130B1 (ko) * 2009-02-18 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP4871973B2 (ja) * 2009-04-28 2012-02-08 株式会社沖データ 半導体薄膜素子の製造方法並びに半導体ウエハ、及び、半導体薄膜素子
JP4686625B2 (ja) * 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
JP5378130B2 (ja) * 2009-09-25 2013-12-25 株式会社東芝 半導体発光装置
JP2011071272A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
TWI505428B (zh) * 2010-03-11 2015-10-21 精材科技股份有限公司 晶片封裝體及其形成方法
KR101762173B1 (ko) * 2011-01-13 2017-08-04 삼성전자 주식회사 웨이퍼 레벨 발광 소자 패키지 및 그의 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160124456A (ko) * 2015-04-20 2016-10-28 엘지이노텍 주식회사 발광소자
KR102552204B1 (ko) 2022-11-08 2023-07-06 박영우 Led를 이용한 기능성 수중 촬영시스템

Also Published As

Publication number Publication date
EP2715807A2 (en) 2014-04-09
CN103563099A (zh) 2014-02-05
JP2014515560A (ja) 2014-06-30
US20140077246A1 (en) 2014-03-20
TWI617055B (zh) 2018-03-01
TW201306322A (zh) 2013-02-01
EP2715807B1 (en) 2018-05-16
WO2012164437A3 (en) 2013-01-17
CN111509103A (zh) 2020-08-07
RU2013158689A (ru) 2015-07-20
WO2012164437A2 (en) 2012-12-06
JP2017108156A (ja) 2017-06-15
RU2604956C2 (ru) 2016-12-20
JP2019114804A (ja) 2019-07-11
EP2715807B8 (en) 2018-10-24

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