KR20140030009A - 저농도 도핑 이미터를 갖는 반도체 소자의 제조에 있어서의 납-텔루륨계 산화물을 함유하는 도전성 조성물의 용도 - Google Patents

저농도 도핑 이미터를 갖는 반도체 소자의 제조에 있어서의 납-텔루륨계 산화물을 함유하는 도전성 조성물의 용도 Download PDF

Info

Publication number
KR20140030009A
KR20140030009A KR1020120131630A KR20120131630A KR20140030009A KR 20140030009 A KR20140030009 A KR 20140030009A KR 1020120131630 A KR1020120131630 A KR 1020120131630A KR 20120131630 A KR20120131630 A KR 20120131630A KR 20140030009 A KR20140030009 A KR 20140030009A
Authority
KR
South Korea
Prior art keywords
based oxide
oxide
paste
thick film
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120131630A
Other languages
English (en)
Korean (ko)
Inventor
브라이언 제이. 로글린
커트 리차드 미케스카
카민 토라디
폴 더글라스 버누이
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20140030009A publication Critical patent/KR20140030009A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
KR1020120131630A 2012-08-30 2012-11-20 저농도 도핑 이미터를 갖는 반도체 소자의 제조에 있어서의 납-텔루륨계 산화물을 함유하는 도전성 조성물의 용도 Ceased KR20140030009A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/598,861 2012-08-30
US13/598,861 US8969709B2 (en) 2012-08-30 2012-08-30 Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters

Publications (1)

Publication Number Publication Date
KR20140030009A true KR20140030009A (ko) 2014-03-11

Family

ID=47627909

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120131630A Ceased KR20140030009A (ko) 2012-08-30 2012-11-20 저농도 도핑 이미터를 갖는 반도체 소자의 제조에 있어서의 납-텔루륨계 산화물을 함유하는 도전성 조성물의 용도

Country Status (5)

Country Link
US (1) US8969709B2 (enExample)
EP (1) EP2703368A1 (enExample)
JP (1) JP6185232B2 (enExample)
KR (1) KR20140030009A (enExample)
CN (1) CN103681949B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180117048A (ko) * 2017-04-18 2018-10-26 이 아이 듀폰 디 네모아 앤드 캄파니 전도성 페이스트 조성물 및 이를 사용하여 제조된 반도체 장치
US10468542B2 (en) 2010-05-04 2019-11-05 Dupont Electronics, Inc. Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
WO2021137570A1 (ko) * 2019-12-31 2021-07-08 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101608123B1 (ko) * 2013-09-13 2016-03-31 제일모직주식회사 태양전지 전극　형성용 조성물 및 이로부터 제조된 전극
EP2848657A1 (en) * 2013-09-16 2015-03-18 Heraeus Precious Metals North America Conshohocken LLC Electroconductive paste with adhesion promoting glass
CN105492548A (zh) * 2013-09-16 2016-04-13 贺利氏贵金属北美康舍霍肯有限责任公司 具有促粘玻璃的导电浆料
US9039937B1 (en) * 2013-12-17 2015-05-26 Samsung Sdi Co., Ltd. Composition for solar cell electrodes and electrode fabricated using the same
KR101780531B1 (ko) * 2013-12-17 2017-09-22 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
JP6046753B2 (ja) 2014-01-17 2016-12-21 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系
CN104193166B (zh) * 2014-09-05 2016-08-24 广东风华高新科技股份有限公司 玻璃料及其制备方法
JP5816738B1 (ja) * 2014-11-27 2015-11-18 株式会社ノリタケカンパニーリミテド 導電性組成物
TWI591652B (zh) 2014-12-08 2017-07-11 碩禾電子材料股份有限公司 一種含無鉛玻璃熔塊之導電漿（五）
CN104692668B (zh) * 2015-02-11 2017-04-12 西北大学 一种太阳能电池正面电极浆料用快速结晶型玻璃粉
JP6580383B2 (ja) * 2015-06-17 2019-09-25 ナミックス株式会社 導電性ペースト、太陽電池及び太陽電池の製造方法
JP5990315B2 (ja) * 2015-09-17 2016-09-14 株式会社ノリタケカンパニーリミテド 導電性組成物
JP6074483B1 (ja) * 2015-11-10 2017-02-01 株式会社ノリタケカンパニーリミテド 導電性組成物
NL2018042B1 (en) * 2016-12-22 2018-06-29 Stichting Energieonderzoek Centrum Nederland Method for manufacturing photovoltaic cells with a rear side polysiliconpassivating contact
WO2019023444A1 (en) * 2017-07-28 2019-01-31 Corning Incorporated SINK PASTE AND METHOD OF SEALING A GLASS ASSEMBLY COMPRISING THE SAME
US10040717B1 (en) * 2017-09-18 2018-08-07 Jiangxi Jiayin Science and Technology, Ltd. Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces
WO2019117809A1 (en) * 2017-12-11 2019-06-20 National University Of Singapore A method of manufacturing a photovoltaic device
CN114213018B (zh) * 2021-12-29 2022-08-16 江苏日御光伏新材料科技有限公司 一种陶瓷玻璃粉及含有该玻璃粉的太阳能电池金属化浆料

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240884A (en) 1991-09-05 1993-08-31 Johnson Matthey, Inc. Silver-glass die attach paste
US5188990A (en) * 1991-11-21 1993-02-23 Vlsi Packaging Materials Low temperature sealing glass compositions
JPH0897011A (ja) * 1994-09-26 1996-04-12 Matsushita Electric Ind Co Ltd 酸化亜鉛バリスタ用電極材料
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7608206B1 (en) 2008-04-18 2009-10-27 E.I. Dupont De Nemours & Company Non-lead resistor composition
JP5699933B2 (ja) * 2009-03-27 2015-04-15 日立化成株式会社 ガラス組成物およびそれを用いた導電性ペースト組成物、電極配線部材と電子部品
JP5559510B2 (ja) * 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池素子及びその製造方法
EP2534695A2 (en) 2010-02-08 2012-12-19 E.I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
WO2011140205A1 (en) * 2010-05-04 2011-11-10 E. I. Du Pont De Nemours And Company Thick-film pastes and solar cells made therefrom
WO2012129554A2 (en) 2011-03-24 2012-09-27 E. I. Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
JP5756447B2 (ja) * 2012-10-31 2015-07-29 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10468542B2 (en) 2010-05-04 2019-11-05 Dupont Electronics, Inc. Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
US10559703B2 (en) 2010-05-04 2020-02-11 Dupont Electronics, Inc. Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
KR20180117048A (ko) * 2017-04-18 2018-10-26 이 아이 듀폰 디 네모아 앤드 캄파니 전도성 페이스트 조성물 및 이를 사용하여 제조된 반도체 장치
WO2021137570A1 (ko) * 2019-12-31 2021-07-08 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지
KR20210086184A (ko) * 2019-12-31 2021-07-08 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지

Also Published As

Publication number Publication date
US8969709B2 (en) 2015-03-03
CN103681949B (zh) 2017-08-15
JP6185232B2 (ja) 2017-08-23
US20140060632A1 (en) 2014-03-06
EP2703368A1 (en) 2014-03-05
JP2014049743A (ja) 2014-03-17
CN103681949A (zh) 2014-03-26

Similar Documents

Publication Publication Date Title
JP6185232B2 (ja) 低濃度ドーピングのエミッタを備えた半導体デバイスの製造における、鉛−テルルをベースとする酸化物を含有する導電性組成物の使用
US10861985B2 (en) Conductive paste composition and semiconductor devices made therewith
KR102048388B1 (ko) 납- 및 텔루륨-산화물을 함유하는 후막 페이스트, 및 반도체 디바이스의 제조에 있어서의 그의 용도
US9640675B2 (en) Conductive paste composition and semiconductor devices made therefrom
US8486308B2 (en) Conductive paste composition containing lithium, and articles made therefrom
US20100258184A1 (en) Glass compositions used in conductors for photovoltaic cells
US20100258166A1 (en) Glass compositions used in conductors for photovoltaic cells
KR102031570B1 (ko) 전도성 페이스트 조성물 및 이를 사용하여 제조된 반도체 장치
CN104769683B (zh) 导电膏组合物及由其制成的半导体器件
KR20140018072A (ko) 납-바나듐계 산화물을 함유하는 후막 페이스트 및 반도체 소자의 제조에서의 그의 용도
KR20110137826A (ko) 광전지용 전도체에 사용되는 유리 조성물
US9793025B2 (en) Conductive paste composition and semiconductor devices made therewith
US9236161B2 (en) Conductive paste composition and semiconductor devices made therewith
US9761742B2 (en) Conductive paste composition and semiconductor devices made therewith
CN107077908B (zh) 含有铅-钨基氧化物的厚膜糊料以及其在半导体装置制造中的用途

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000