KR20140002673A - 합성 비정질 실리카 분말 및 그 제조 방법 - Google Patents
합성 비정질 실리카 분말 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20140002673A KR20140002673A KR1020137015585A KR20137015585A KR20140002673A KR 20140002673 A KR20140002673 A KR 20140002673A KR 1020137015585 A KR1020137015585 A KR 1020137015585A KR 20137015585 A KR20137015585 A KR 20137015585A KR 20140002673 A KR20140002673 A KR 20140002673A
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- South Korea
- Prior art keywords
- powder
- silica
- silica powder
- synthetic amorphous
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 1023
- 239000000843 powder Substances 0.000 title claims abstract description 781
- 229910002029 synthetic silica gel Inorganic materials 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 300
- 239000002245 particle Substances 0.000 claims abstract description 251
- 238000001035 drying Methods 0.000 claims abstract description 107
- 238000005406 washing Methods 0.000 claims abstract description 65
- 229910002027 silica gel Inorganic materials 0.000 claims description 129
- 239000000741 silica gel Substances 0.000 claims description 129
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 105
- 229910021485 fumed silica Inorganic materials 0.000 claims description 71
- 229910052786 argon Inorganic materials 0.000 claims description 59
- 235000012239 silicon dioxide Nutrition 0.000 claims description 45
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 43
- 239000005049 silicon tetrachloride Substances 0.000 claims description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000000460 chlorine Substances 0.000 claims description 36
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 34
- 229910052801 chlorine Inorganic materials 0.000 claims description 34
- 238000010304 firing Methods 0.000 claims description 22
- 238000005469 granulation Methods 0.000 claims description 22
- 230000003179 granulation Effects 0.000 claims description 22
- 238000010298 pulverizing process Methods 0.000 claims description 11
- 150000003377 silicon compounds Chemical class 0.000 claims description 11
- 238000009835 boiling Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 239000000499 gel Substances 0.000 claims description 5
- 230000003301 hydrolyzing effect Effects 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 238000003801 milling Methods 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 238000003756 stirring Methods 0.000 description 108
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 102
- 229910021642 ultra pure water Inorganic materials 0.000 description 96
- 239000012498 ultrapure water Substances 0.000 description 96
- 239000007789 gas Substances 0.000 description 76
- 238000004506 ultrasonic cleaning Methods 0.000 description 58
- 239000002994 raw material Substances 0.000 description 53
- 229910052757 nitrogen Inorganic materials 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 45
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 41
- 239000010453 quartz Substances 0.000 description 35
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 29
- 239000012299 nitrogen atmosphere Substances 0.000 description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 239000012298 atmosphere Substances 0.000 description 22
- 238000011084 recovery Methods 0.000 description 21
- 238000004140 cleaning Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000003643 water by type Substances 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910002026 crystalline silica Inorganic materials 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- -1 silicic acid ester Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000000502 dialysis Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000001454 recorded image Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229940044950 vaginal gel Drugs 0.000 description 2
- 239000000029 vaginal gel Substances 0.000 description 2
- HNSDLXPSAYFUHK-UHFFFAOYSA-N 1,4-bis(2-ethylhexyl) sulfosuccinate Chemical compound CCCCC(CC)COC(=O)CC(S(O)(=O)=O)C(=O)OCC(CC)CCCC HNSDLXPSAYFUHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- POFAUXBEMGMSAV-UHFFFAOYSA-N [Si].[Cl] Chemical compound [Si].[Cl] POFAUXBEMGMSAV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical class Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
- C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/141—Preparation of hydrosols or aqueous dispersions
- C01B33/1415—Preparation of hydrosols or aqueous dispersions by suspending finely divided silica in water
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/10—Forming beads
- C03B19/1005—Forming solid beads
- C03B19/102—Forming solid beads by blowing a gas onto a stream of molten glass or onto particulate materials, e.g. pulverising
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Silicon Compounds (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2011-064456 | 2011-03-23 | ||
| JP2011064451 | 2011-03-23 | ||
| JP2011064456 | 2011-03-23 | ||
| JPJP-P-2011-064451 | 2011-03-23 | ||
| PCT/JP2012/055059 WO2012128005A1 (ja) | 2011-03-23 | 2012-02-29 | 合成非晶質シリカ粉末及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140002673A true KR20140002673A (ko) | 2014-01-08 |
Family
ID=46879163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137015585A Withdrawn KR20140002673A (ko) | 2011-03-23 | 2012-02-29 | 합성 비정질 실리카 분말 및 그 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9446959B2 (enExample) |
| EP (1) | EP2690066A4 (enExample) |
| JP (1) | JP5825145B2 (enExample) |
| KR (1) | KR20140002673A (enExample) |
| CN (1) | CN103249674B (enExample) |
| TW (1) | TWI525041B (enExample) |
| WO (1) | WO2012128005A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6466635B2 (ja) * | 2013-06-14 | 2019-02-06 | 信越化学工業株式会社 | 非水電解質二次電池用負極の製造方法及び非水電解質二次電池の製造方法 |
| US9637405B2 (en) | 2013-06-30 | 2017-05-02 | Sumco Corporation | Evaluation method of suitable silica powder in manufacturing vitreous silica crucible for pulling of silicon single crystal |
| KR20160113573A (ko) * | 2014-01-29 | 2016-09-30 | 미쓰비시 마테리알 가부시키가이샤 | 합성 비정질 실리카 분말 및 그 제조 방법 |
| CN104227006A (zh) * | 2014-08-26 | 2014-12-24 | 苏州智研新材料科技有限公司 | 一种微细球形不锈钢粉体的制备方法 |
| KR20180095619A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 | 실리카 유리 제조 동안 규소 함량의 증가 |
| CN108698890A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 利用在熔融烘箱中的露点监测制备石英玻璃体 |
| KR20180095880A (ko) * | 2015-12-18 | 2018-08-28 | 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 | 합성 석영 유리 결정립의 제조 |
| TWI733723B (zh) | 2015-12-18 | 2021-07-21 | 德商何瑞斯廓格拉斯公司 | 不透明石英玻璃體的製備 |
| CN108698894A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 在多腔式烘箱中制备石英玻璃体 |
| CN108698888A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 在石英玻璃制备中作为中间物的经碳掺杂的二氧化硅颗粒的制备 |
| TWI808933B (zh) | 2015-12-18 | 2023-07-21 | 德商何瑞斯廓格拉斯公司 | 石英玻璃體、二氧化矽顆粒、光導、施照體、及成型體及其製備方法 |
| US11299417B2 (en) | 2015-12-18 | 2022-04-12 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a melting crucible of refractory metal |
| CN108698892A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 从二氧化硅颗粒制备石英玻璃体 |
| CN110023239A (zh) * | 2016-11-16 | 2019-07-16 | 三菱化学株式会社 | 定量供给用二氧化硅粉体、以及使用该粉体的生物物质的纯化试剂盒及其制造方法 |
| CN107052225A (zh) * | 2016-12-30 | 2017-08-18 | 天津泽希矿产加工有限公司 | 特种砂‑球形熔融硅砂及其制备方法和应用 |
| JP2019182691A (ja) * | 2018-04-04 | 2019-10-24 | 東ソ−・エスジ−エム株式会社 | 石英ガラスインゴット及び石英ガラス製品の製造方法 |
| US20210403374A1 (en) * | 2018-12-14 | 2021-12-30 | Tosoh Quartz Corporation | Method of manufacturing opaque quartz glass |
| CN111943214B (zh) * | 2020-08-18 | 2022-08-30 | 苏州英纳特纳米科技有限公司 | 非晶态纳米球形二氧化硅的制备方法 |
| WO2022181634A1 (ja) * | 2021-02-25 | 2022-09-01 | 東レ株式会社 | 樹脂粉粒体を用いた３次元造形物の製造方法、３次元造形物、並びに樹脂粉粒体 |
| JP7841400B2 (ja) * | 2022-09-20 | 2026-04-07 | 株式会社Sumco | 石英ガラスルツボの製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3525495C1 (de) | 1985-07-17 | 1987-01-02 | Heraeus Schott Quarzschmelze | Verfahren zur Herstellung von Gegenstaenden aus synthetischem Siliziumdioxid |
| JPS62176928A (ja) | 1986-01-29 | 1987-08-03 | Mitsubishi Metal Corp | 石英ガラス粉末の製造方法 |
| JPS62176929A (ja) | 1986-01-30 | 1987-08-03 | Olympus Optical Co Ltd | 成形型の離型リング |
| JPH03275527A (ja) | 1990-03-24 | 1991-12-06 | Mitsubishi Kasei Corp | 多孔質シリカガラス粉末 |
| JPH0475848A (ja) | 1990-07-17 | 1992-03-10 | Toyoda Mach Works Ltd | 適応制御装置 |
| FR2693451B1 (fr) * | 1992-07-07 | 1994-08-19 | Alcatel Nv | Procédé de fabrication d'une poudre de silice et application d'une telle poudre à la réalisation d'une préforme pour fibre optique. |
| JP3350139B2 (ja) | 1993-03-31 | 2002-11-25 | 三菱レイヨン株式会社 | 球状シリカ粒子の製造方法 |
| JPH09100105A (ja) * | 1995-10-02 | 1997-04-15 | Mitsubishi Chem Corp | 超微粒金属酸化物粉の製造方法 |
| JP4154563B2 (ja) * | 2001-07-23 | 2008-09-24 | 信越化学工業株式会社 | シリカ含有複合酸化物球状微粒子及びその製造方法 |
| DE10211958A1 (de) | 2002-03-18 | 2003-10-16 | Wacker Chemie Gmbh | Hochreines Silica-Pulver, Verfahren und Vorrichtung zu seiner Herstellung |
| JP3639279B2 (ja) * | 2003-01-24 | 2005-04-20 | 高周波熱錬株式会社 | 熱プラズマによる粉末の合成／精製または球状化方法とその装置 |
| JP2005162593A (ja) * | 2003-12-04 | 2005-06-23 | Kiyoaki Shiraishi | 加熱処理する事によって「角（かど）」無くしたシリカ |
| JP5013573B2 (ja) * | 2005-09-30 | 2012-08-29 | 信越石英株式会社 | 高耐熱性石英ガラス粉の製造方法、高耐熱性石英ガラス粉及びガラス体 |
| EP2014622B1 (de) | 2007-07-06 | 2017-01-18 | Evonik Degussa GmbH | Verfahren zur Herstellung eines Kieselglasgranulats |
| EP2522627A4 (en) | 2010-01-07 | 2014-03-26 | Mitsubishi Materials Corp | SYNTHETIC AMORPHOUS SILICA POWDER |
| JP2011157260A (ja) * | 2010-01-07 | 2011-08-18 | Mitsubishi Materials Corp | 合成非晶質シリカ粉末及びその製造方法 |
| JP2011157261A (ja) | 2010-01-07 | 2011-08-18 | Mitsubishi Materials Corp | 合成非晶質シリカ粉末及びその製造方法 |
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2012
- 2012-02-29 EP EP12761100.2A patent/EP2690066A4/en not_active Withdrawn
- 2012-02-29 JP JP2012043206A patent/JP5825145B2/ja not_active Expired - Fee Related
- 2012-02-29 WO PCT/JP2012/055059 patent/WO2012128005A1/ja not_active Ceased
- 2012-02-29 CN CN201280004018.8A patent/CN103249674B/zh not_active Expired - Fee Related
- 2012-02-29 US US14/004,551 patent/US9446959B2/en active Active
- 2012-02-29 KR KR1020137015585A patent/KR20140002673A/ko not_active Withdrawn
- 2012-03-19 TW TW101109323A patent/TWI525041B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201242897A (en) | 2012-11-01 |
| CN103249674A (zh) | 2013-08-14 |
| JP2012211070A (ja) | 2012-11-01 |
| EP2690066A4 (en) | 2014-08-20 |
| CN103249674B (zh) | 2015-03-11 |
| EP2690066A1 (en) | 2014-01-29 |
| TWI525041B (zh) | 2016-03-11 |
| JP5825145B2 (ja) | 2015-12-02 |
| WO2012128005A1 (ja) | 2012-09-27 |
| US20140065423A1 (en) | 2014-03-06 |
| US9446959B2 (en) | 2016-09-20 |
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