KR20130126948A - 후면 격리를 갖는 반도체 소자 - Google Patents

후면 격리를 갖는 반도체 소자 Download PDF

Info

Publication number
KR20130126948A
KR20130126948A KR1020137017405A KR20137017405A KR20130126948A KR 20130126948 A KR20130126948 A KR 20130126948A KR 1020137017405 A KR1020137017405 A KR 1020137017405A KR 20137017405 A KR20137017405 A KR 20137017405A KR 20130126948 A KR20130126948 A KR 20130126948A
Authority
KR
South Korea
Prior art keywords
conductive
substrate
layer
well
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137017405A
Other languages
English (en)
Korean (ko)
Inventor
알렉산더 리도우
지엔준 카오
로버트 비치
조한 스트리돔
알라나 나카타
광 유안 쟈오
Original Assignee
이피션트 파워 컨버젼 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이피션트 파워 컨버젼 코퍼레이션 filed Critical 이피션트 파워 컨버젼 코퍼레이션
Publication of KR20130126948A publication Critical patent/KR20130126948A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020137017405A 2010-12-15 2011-12-14 후면 격리를 갖는 반도체 소자 Ceased KR20130126948A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42315710P 2010-12-15 2010-12-15
US61/423,157 2010-12-15
PCT/US2011/064803 WO2012082840A1 (en) 2010-12-15 2011-12-14 Semiconductor devices with back surface isolation

Publications (1)

Publication Number Publication Date
KR20130126948A true KR20130126948A (ko) 2013-11-21

Family

ID=46233211

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137017405A Ceased KR20130126948A (ko) 2010-12-15 2011-12-14 후면 격리를 갖는 반도체 소자

Country Status (7)

Country Link
US (3) US9607876B2 (https=)
JP (1) JP2014504013A (https=)
KR (1) KR20130126948A (https=)
CN (1) CN103329256B (https=)
DE (1) DE112011104408B4 (https=)
TW (1) TWI572037B (https=)
WO (1) WO2012082840A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150063683A (ko) * 2013-12-02 2015-06-10 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 반도체 회로

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011104408B4 (de) * 2010-12-15 2025-09-18 Efficient Power Conversion Corporation Halbleitervorrichtungen mit rückseitiger Isolierung
JP5758132B2 (ja) 2011-01-26 2015-08-05 株式会社東芝 半導体素子
JP2013004750A (ja) * 2011-06-16 2013-01-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
US9087812B2 (en) 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
US9281388B2 (en) * 2011-07-15 2016-03-08 Infineon Technologies Americas Corp. Composite semiconductor device with a SOI substrate having an integrated diode
US9887139B2 (en) 2011-12-28 2018-02-06 Infineon Technologies Austria Ag Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device
US9165839B2 (en) * 2012-03-13 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma protection diode for a HEMT device
JP2014056938A (ja) * 2012-09-12 2014-03-27 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2014060358A (ja) * 2012-09-19 2014-04-03 Toshiba Corp 半導体装置
WO2014111864A1 (en) * 2013-01-15 2014-07-24 Visic Technologies Ltd. Multichannel transistor
WO2014134490A1 (en) * 2013-02-28 2014-09-04 Massachusetts Institute Of Technology Improving linearity in semiconductor devices
US9269789B2 (en) * 2013-03-15 2016-02-23 Semiconductor Components Industries, Llc Method of forming a high electron mobility semiconductor device and structure therefor
JP6107435B2 (ja) * 2013-06-04 2017-04-05 三菱電機株式会社 半導体装置及びその製造方法
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP6143598B2 (ja) * 2013-08-01 2017-06-07 株式会社東芝 半導体装置
JP6135487B2 (ja) 2013-12-09 2017-05-31 富士通株式会社 半導体装置及び半導体装置の製造方法
EP3032579A1 (en) * 2014-12-09 2016-06-15 IMEC vzw An integrated circuit comprising group iii-n transistors monolithically integrated on a silicon substrate and a method for manufacturing thereof
FR3040539B1 (fr) * 2015-08-28 2018-03-09 Stmicroelectronics (Tours) Sas Diode schottky haute tension a nitrure de gallium
US20170069723A1 (en) * 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Iii-nitride semiconductor structures comprising multiple spatially patterned implanted species
JP2017055008A (ja) * 2015-09-11 2017-03-16 株式会社東芝 半導体装置
DE102015119771B4 (de) * 2015-11-16 2024-10-02 Infineon Technologies Ag Halbleitervorrichtung mit einem ersten Transistor und einem zweiten Transistor
US9685545B2 (en) * 2015-11-25 2017-06-20 Texas Instruments Incorporated Isolated III-N semiconductor devices
US9728483B2 (en) * 2015-12-09 2017-08-08 Honeywell Federal Manufacturing & Technologies, Llc Method of forming an integrated circuit with heat-mitigating diamond-filled channels
DE102016200825A1 (de) * 2016-01-21 2017-07-27 Robert Bosch Gmbh Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US10192980B2 (en) 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10083856B2 (en) * 2016-08-01 2018-09-25 Taiwan Semiconductor Manufacturing Company Limited Isolation regions for semiconductor structures and methods of forming the same
US11114543B2 (en) * 2017-01-24 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Group III-V device structure
DE102017103111B4 (de) * 2017-02-16 2025-03-13 Semikron Elektronik Gmbh & Co. Kg Halbleiterdiode und elektronische Schaltungsanordnung hiermit
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US11588024B2 (en) * 2017-03-17 2023-02-21 Infineon Technologies Austria Ag High voltage blocking III-V semiconductor device
US10128228B1 (en) * 2017-06-22 2018-11-13 Infineon Technologies Americas Corp. Type III-V semiconductor device with integrated diode
CN111295763B (zh) * 2017-11-13 2023-12-29 新电元工业株式会社 宽带隙半导体装置
US10644142B2 (en) * 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
US10629475B2 (en) * 2017-12-22 2020-04-21 Vanguard International Semiconductor Corporation Semiconductor device with two-part insulation structure within non-active region
TWI642183B (zh) * 2017-12-25 2018-11-21 新唐科技股份有限公司 氮化物半導體元件
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
US10475889B1 (en) 2018-06-05 2019-11-12 Qualcomm Incorporated Gallium nitride power amplifier integration with metal-oxide-semiconductor devices
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
CN111490043A (zh) * 2019-01-29 2020-08-04 意法半导体股份有限公司 在增强模式下操作的hemt功率器件及其制造方法
US11810971B2 (en) * 2019-03-21 2023-11-07 Transphorm Technology, Inc. Integrated design for III-Nitride devices
JP7426786B2 (ja) 2019-05-30 2024-02-02 ローム株式会社 窒化物半導体装置
CN112216736B (zh) 2019-07-10 2024-04-30 联华电子股份有限公司 高电子移动率晶体管与其制作方法
CN110379807B (zh) * 2019-07-31 2021-02-26 厦门市三安集成电路有限公司 微电子器件及微电子器件制作方法
US12230699B2 (en) * 2019-10-23 2025-02-18 Analog Devices, Inc. Modification of electric fields of compound semiconductor devices
CN111312712A (zh) * 2020-02-25 2020-06-19 英诺赛科（珠海）科技有限公司 半导体器件及其制造方法
US11521915B2 (en) * 2020-02-26 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
DE102020119814A1 (de) 2020-02-26 2021-08-26 Taiwan Semiconductor Manufacturing Co. Ltd. Front-end-of-line -semiconductor-on-substrate durchkontaktierung (feol-tsv)
US11251294B2 (en) * 2020-03-24 2022-02-15 Infineon Technologies Austria Ag High voltage blocking III-V semiconductor device
FR3111738B1 (fr) * 2020-06-19 2022-08-05 Commissariat Energie Atomique Dispositif micro-électronique à substrat isolé, et procédé de fabrication associé
US11515397B2 (en) 2020-07-21 2022-11-29 Globalfoundries U.S. Inc. III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer
US11469225B2 (en) 2020-10-16 2022-10-11 Globalfoundries U.S. Inc. Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientation
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
US11569374B2 (en) 2020-12-02 2023-01-31 Globalfoundries U.S. Inc. Implanted isolation for device integration on a common substrate
CN115248364A (zh) 2021-04-26 2022-10-28 财团法人工业技术研究院 高频元件测试装置及其测试方法
US12557322B2 (en) 2021-05-17 2026-02-17 Wolfspeed, Inc. Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
EP4629776A3 (en) * 2021-05-25 2025-12-10 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
US11842937B2 (en) * 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
TWI798922B (zh) 2021-11-08 2023-04-11 財團法人工業技術研究院 半導體結構及其製造方法
TWI779979B (zh) * 2021-12-30 2022-10-01 新唐科技股份有限公司 半導體結構及其製造方法
CN114503261B (zh) * 2022-01-07 2024-01-23 英诺赛科(苏州)科技有限公司 氮化物基半导体电路及其制造方法
US12310105B2 (en) * 2022-03-02 2025-05-20 Vanguard International Semiconductor Corporation Semiconductor device including high electron mobility transistors with an improved backside electrode being applied in a half-bridge circuit
US20250072109A1 (en) * 2022-09-16 2025-02-27 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
US20240204055A1 (en) * 2022-12-17 2024-06-20 Texas Instruments Incorporated Screen layer integration in gallium nitride technology
US20240213239A1 (en) * 2022-12-21 2024-06-27 Analog Devices, Inc. High-electron-mobility transistor device with integrated p-n layer
US20240405078A1 (en) * 2023-05-31 2024-12-05 Texas Instruments Incorporated Integrated devices with conductive barrier structure
IT202300015852A1 (it) * 2023-07-27 2025-01-27 St Microelectronics Int Nv Dispositivo elettronico a semiconduttore comprendente un componente elettronico basato su eterostruttura e procedimento di fabbricazione
CN117038672B (zh) * 2023-08-07 2026-02-03 湖北九峰山实验室 一种氮化物半导体器件及其制备方法
US12494265B2 (en) * 2023-12-13 2025-12-09 Hewlett Packard Enterprise Development Lp On-access error correction for content-addressable memory
WO2025158318A1 (en) * 2024-01-24 2025-07-31 Ganpower International, Inc. Methods and circuits for a switching floating substrate of a gallium nitride field effect transistor
CN119403169B (zh) * 2024-10-25 2025-12-12 杭州电子科技大学 包含嵌入层的增强型AlGaN/GaN HEMT器件

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637302A (ja) * 1992-07-14 1994-02-10 Mitsuteru Kimura トンネルトランジスタ
US5889293A (en) * 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
DE69925078T2 (de) 1998-08-29 2006-03-09 International Business Machines Corp. SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
JP3709437B2 (ja) 2002-03-07 2005-10-26 独立行政法人産業技術総合研究所 ＧａＮ系ヘテロ接合電界効果トランジスタ及びその特性を制御する方法
US20030186555A1 (en) * 2002-03-26 2003-10-02 Ming-Chung Liang Utilizing chemical dry etching for forming rounded corner in shallow trench isolation process
US6589845B1 (en) * 2002-07-16 2003-07-08 Semiconductor Components Industries Llc Method of forming a semiconductor device and structure therefor
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
JP4645753B2 (ja) 2003-02-06 2011-03-09 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体を有する半導体素子
US7078743B2 (en) 2003-05-15 2006-07-18 Matsushita Electric Industrial Co., Ltd. Field effect transistor semiconductor device
US7361946B2 (en) 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
JP2006086398A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100741990B1 (ko) * 2006-07-10 2007-07-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2008034411A (ja) * 2006-07-26 2008-02-14 Toshiba Corp 窒化物半導体素子
US7700405B2 (en) * 2007-02-28 2010-04-20 Freescale Semiconductor, Inc. Microelectronic assembly with improved isolation voltage performance and a method for forming the same
JP5242068B2 (ja) 2007-03-23 2013-07-24 古河電気工業株式会社 ＧａＮ系半導体デバイスおよびその製造方法
US20080272408A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
JP5319084B2 (ja) * 2007-06-19 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP4478175B2 (ja) * 2007-06-26 2010-06-09 株式会社東芝 半導体装置
JP2009182107A (ja) * 2008-01-30 2009-08-13 Furukawa Electric Co Ltd:The 半導体装置
JP2009231396A (ja) 2008-03-19 2009-10-08 Sumitomo Chemical Co Ltd 半導体装置および半導体装置の製造方法
US20090305470A1 (en) 2008-06-10 2009-12-10 International Business Machines Corporation Isolating back gates of fully depleted soi devices
US20100207164A1 (en) * 2008-08-22 2010-08-19 Daisuke Shibata Field effect transistor
DE102009018054B4 (de) * 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
US7902608B2 (en) * 2009-05-28 2011-03-08 International Business Machines Corporation Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions and an underlying floating well section
DE112011104408B4 (de) * 2010-12-15 2025-09-18 Efficient Power Conversion Corporation Halbleitervorrichtungen mit rückseitiger Isolierung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150063683A (ko) * 2013-12-02 2015-06-10 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 반도체 회로

Also Published As

Publication number Publication date
JP2014504013A (ja) 2014-02-13
US20170162429A1 (en) 2017-06-08
US10600674B2 (en) 2020-03-24
DE112011104408B4 (de) 2025-09-18
TW201244093A (en) 2012-11-01
US10312131B2 (en) 2019-06-04
US20190252238A1 (en) 2019-08-15
US9607876B2 (en) 2017-03-28
CN103329256A (zh) 2013-09-25
CN103329256B (zh) 2016-09-21
DE112011104408T5 (de) 2013-10-24
HK1189427A1 (zh) 2014-06-06
US20120153300A1 (en) 2012-06-21
TWI572037B (zh) 2017-02-21
WO2012082840A1 (en) 2012-06-21

Similar Documents

Publication Publication Date Title
US10600674B2 (en) Semiconductor devices with back surface isolation
KR102210449B1 (ko) 추가적인 소자를 생성하기 위한 폴리실리콘 층을 갖는 GaN 트랜지스터
US10446542B1 (en) GaN structures
US20240120383A1 (en) Monolithic integration of high and low-side gan fets with screening back gating effect
US9917184B2 (en) Semiconductor component that includes a clamping structure and method of manufacturing the semiconductor component
US10276713B2 (en) Semiconductor component and method of manufacture
TWI723670B (zh) 集成電晶體元件及形成其的方法
US10276686B2 (en) Cascode configured semiconductor component
CN104319238A (zh) 形成高电子迁移率半导体器件的方法及其结构
CN113451300A (zh) 高压阻断ⅲ-ⅴ型半导体器件
US20190237568A1 (en) Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process
CN111192871B (zh) 用于静电防护的晶体管结构及其制造方法
US20250301778A1 (en) Semiconductor devices in integrated circuit having different threshold voltages
CN119403213A (zh) 集成不同电子组件的半导体电子设备的制造过程及半导体电子设备
CN111199970B (zh) 用于静电防护的晶体管结构及其制造方法
US20250301680A1 (en) Semiconductor devices in integrated circuit having different threshold voltages
US20250048672A1 (en) Semiconductor device
US20250040163A1 (en) Manufacturing process of a semiconductor electronic device integrating different electronic components and semiconductor electronic device
US20250040210A1 (en) Semiconductor electronic device integrating an electronic component based on heterostructure and having reduced mechanical stress
HK1189427B (en) Semiconductor devices with back surface isolation
CN206210805U (zh) 半导体组件及屏蔽栅极半导体组件
KR20210065759A (ko) 전력 반도체 소자

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000