KR20130122514A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR20130122514A
KR20130122514A KR1020127026283A KR20127026283A KR20130122514A KR 20130122514 A KR20130122514 A KR 20130122514A KR 1020127026283 A KR1020127026283 A KR 1020127026283A KR 20127026283 A KR20127026283 A KR 20127026283A KR 20130122514 A KR20130122514 A KR 20130122514A
Authority
KR
South Korea
Prior art keywords
insulating film
gate insulating
film
electrode
substrate surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127026283A
Other languages
English (en)
Korean (ko)
Inventor
히데토 다마소
Original Assignee
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20130122514A publication Critical patent/KR20130122514A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Electrodes Of Semiconductors (AREA)
KR1020127026283A 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법 Withdrawn KR20130122514A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010245150A JP5668414B2 (ja) 2010-11-01 2010-11-01 半導体装置の製造方法
JPJP-P-2010-245150 2010-11-01
PCT/JP2011/073996 WO2012060223A1 (ja) 2010-11-01 2011-10-19 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR20130122514A true KR20130122514A (ko) 2013-11-07

Family

ID=46024340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127026283A Withdrawn KR20130122514A (ko) 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법

Country Status (8)

Country Link
US (1) US8691679B2 (enExample)
EP (1) EP2637213A4 (enExample)
JP (1) JP5668414B2 (enExample)
KR (1) KR20130122514A (enExample)
CN (1) CN102844871B (enExample)
CA (1) CA2791183A1 (enExample)
TW (1) TW201222820A (enExample)
WO (1) WO2012060223A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003253A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5875684B2 (ja) * 2012-07-09 2016-03-02 株式会社日立製作所 Ｍｏｓ型電界効果トランジスタ
JP2014063948A (ja) * 2012-09-24 2014-04-10 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
JP2014078659A (ja) * 2012-10-12 2014-05-01 Sumitomo Electric Ind Ltd 半導体装置の製造方法
WO2014065018A1 (ja) 2012-10-23 2014-05-01 富士電機株式会社 半導体装置の製造方法
EP2763159A1 (en) * 2013-01-30 2014-08-06 University College Cork Improved low resistance contacts for semiconductor devices
CN105518830B (zh) 2014-04-18 2018-01-26 富士电机株式会社 半导体装置的制造方法
CN105518829B (zh) * 2014-04-18 2018-01-26 富士电机株式会社 半导体装置的制造方法
CN105593975B (zh) 2014-04-18 2018-05-08 富士电机株式会社 半导体装置的制造方法
JP2016046311A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置
JP6387791B2 (ja) 2014-10-29 2018-09-12 富士電機株式会社 半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184115B2 (ja) * 1997-04-11 2001-07-09 松下電器産業株式会社 オーミック電極形成方法
CN1131548C (zh) 1997-04-04 2003-12-17 松下电器产业株式会社 半导体装置
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
JP2004158702A (ja) * 2002-11-07 2004-06-03 C Tekku:Kk 半導体装置製造方法
US20050104072A1 (en) * 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
CN100483631C (zh) * 2003-08-14 2009-04-29 克里公司 金属-碳化硅欧姆接触的局部退火及其形成的装置
US8866150B2 (en) * 2007-05-31 2014-10-21 Cree, Inc. Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
EP2280417B1 (en) 2008-04-15 2015-07-22 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
JP2010087397A (ja) 2008-10-02 2010-04-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
US8188538B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
EP2637213A1 (en) 2013-09-11
JP2012099599A (ja) 2012-05-24
CA2791183A1 (en) 2012-05-10
CN102844871A (zh) 2012-12-26
TW201222820A (en) 2012-06-01
US20120326167A1 (en) 2012-12-27
EP2637213A4 (en) 2014-06-25
US8691679B2 (en) 2014-04-08
JP5668414B2 (ja) 2015-02-12
WO2012060223A1 (ja) 2012-05-10
CN102844871B (zh) 2015-05-13

Similar Documents

Publication Publication Date Title
JP5668414B2 (ja) 半導体装置の製造方法
KR101442886B1 (ko) 반도체 장치 및 그 제조 방법
JP5525940B2 (ja) 半導体装置および半導体装置の製造方法
JP4539684B2 (ja) 炭化珪素半導体装置およびその製造方法
US8237172B2 (en) Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate
KR101171586B1 (ko) 반도체 장치 및 그 제조 방법
KR20130109168A (ko) 탄화규소 반도체 장치의 제조 방법
JP2021145112A (ja) 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7532965B2 (ja) 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US8847237B2 (en) Silicon carbide semiconductor device and method for manufacturing same
JP5949305B2 (ja) 炭化珪素半導体装置の製造方法
US20130341647A1 (en) Silicon carbide semiconductor device
JP7797888B2 (ja) 炭化珪素半導体装置
US8866156B2 (en) Silicon carbide semiconductor device and method for manufacturing same
JP7669310B2 (ja) 半導体装置の製造方法、半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7673572B2 (ja) 炭化珪素半導体装置
JP5439856B2 (ja) 絶縁ゲート型電界効果トランジスタ
JP5991629B2 (ja) 半導体装置および半導体装置の製造方法
JP2022187367A (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-3-3-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000