TW201222820A - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method therefor Download PDFInfo
- Publication number
- TW201222820A TW201222820A TW100138735A TW100138735A TW201222820A TW 201222820 A TW201222820 A TW 201222820A TW 100138735 A TW100138735 A TW 100138735A TW 100138735 A TW100138735 A TW 100138735A TW 201222820 A TW201222820 A TW 201222820A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- insulating film
- semiconductor device
- film
- gate insulating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
- H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010245150A JP5668414B2 (ja) | 2010-11-01 | 2010-11-01 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201222820A true TW201222820A (en) | 2012-06-01 |
Family
ID=46024340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100138735A TW201222820A (en) | 2010-11-01 | 2011-10-25 | Semiconductor device and manufacturing method therefor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8691679B2 (enExample) |
| EP (1) | EP2637213A4 (enExample) |
| JP (1) | JP5668414B2 (enExample) |
| KR (1) | KR20130122514A (enExample) |
| CN (1) | CN102844871B (enExample) |
| CA (1) | CA2791183A1 (enExample) |
| TW (1) | TW201222820A (enExample) |
| WO (1) | WO2012060223A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014003253A (ja) * | 2012-06-21 | 2014-01-09 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
| JP5875684B2 (ja) * | 2012-07-09 | 2016-03-02 | 株式会社日立製作所 | Ｍｏｓ型電界効果トランジスタ |
| JP2014063948A (ja) * | 2012-09-24 | 2014-04-10 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
| JP2014078659A (ja) * | 2012-10-12 | 2014-05-01 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| CN104718604B (zh) * | 2012-10-23 | 2017-06-30 | 富士电机株式会社 | 半导体装置的制造方法 |
| EP2763159A1 (en) * | 2013-01-30 | 2014-08-06 | University College Cork | Improved low resistance contacts for semiconductor devices |
| CN105518829B (zh) * | 2014-04-18 | 2018-01-26 | 富士电机株式会社 | 半导体装置的制造方法 |
| JP6037083B2 (ja) | 2014-04-18 | 2016-11-30 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP5939362B2 (ja) | 2014-04-18 | 2016-06-22 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2016046311A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6387791B2 (ja) | 2014-10-29 | 2018-09-12 | 富士電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1131548C (zh) | 1997-04-04 | 2003-12-17 | 松下电器产业株式会社 | 半导体装置 |
| JP3184115B2 (ja) * | 1997-04-11 | 2001-07-09 | 松下電器産業株式会社 | オーミック電極形成方法 |
| US6599644B1 (en) * | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| JP2004158702A (ja) * | 2002-11-07 | 2004-06-03 | C Tekku:Kk | 半導体装置製造方法 |
| US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| CN100483631C (zh) * | 2003-08-14 | 2009-04-29 | 克里公司 | 金属-碳化硅欧姆接触的局部退火及其形成的装置 |
| US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
| CN102007595B (zh) * | 2008-04-15 | 2013-12-25 | 住友电气工业株式会社 | 半导体器件及其制造方法 |
| JP2010087397A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
| JP5588671B2 (ja) * | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置の製造方法 |
-
2010
- 2010-11-01 JP JP2010245150A patent/JP5668414B2/ja not_active Expired - Fee Related
-
2011
- 2011-10-19 EP EP11837874.4A patent/EP2637213A4/en not_active Ceased
- 2011-10-19 KR KR1020127026283A patent/KR20130122514A/ko not_active Withdrawn
- 2011-10-19 CA CA2791183A patent/CA2791183A1/en not_active Abandoned
- 2011-10-19 WO PCT/JP2011/073996 patent/WO2012060223A1/ja not_active Ceased
- 2011-10-19 CN CN201180018726.2A patent/CN102844871B/zh not_active Expired - Fee Related
- 2011-10-19 US US13/581,980 patent/US8691679B2/en not_active Expired - Fee Related
- 2011-10-25 TW TW100138735A patent/TW201222820A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102844871A (zh) | 2012-12-26 |
| CA2791183A1 (en) | 2012-05-10 |
| EP2637213A1 (en) | 2013-09-11 |
| JP2012099599A (ja) | 2012-05-24 |
| CN102844871B (zh) | 2015-05-13 |
| KR20130122514A (ko) | 2013-11-07 |
| US20120326167A1 (en) | 2012-12-27 |
| US8691679B2 (en) | 2014-04-08 |
| EP2637213A4 (en) | 2014-06-25 |
| JP5668414B2 (ja) | 2015-02-12 |
| WO2012060223A1 (ja) | 2012-05-10 |
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