KR20130076732A - 광 전도 안테나, 테라헤르츠파 발생 장치, 카메라, 이미징 장치 및 계측 장치 - Google Patents

광 전도 안테나, 테라헤르츠파 발생 장치, 카메라, 이미징 장치 및 계측 장치 Download PDF

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Publication number
KR20130076732A
KR20130076732A KR1020120152330A KR20120152330A KR20130076732A KR 20130076732 A KR20130076732 A KR 20130076732A KR 1020120152330 A KR1020120152330 A KR 1020120152330A KR 20120152330 A KR20120152330 A KR 20120152330A KR 20130076732 A KR20130076732 A KR 20130076732A
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KR
South Korea
Prior art keywords
terahertz wave
semiconductor layer
terahertz
type semiconductor
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020120152330A
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English (en)
Korean (ko)
Inventor
히로또 도미오까
Original Assignee
세이코 엡슨 가부시키가이샤
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Publication date
Application filed by 세이코 엡슨 가부시키가이샤 filed Critical 세이코 엡슨 가부시키가이샤
Publication of KR20130076732A publication Critical patent/KR20130076732A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
KR1020120152330A 2011-12-28 2012-12-24 광 전도 안테나, 테라헤르츠파 발생 장치, 카메라, 이미징 장치 및 계측 장치 Withdrawn KR20130076732A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011290068A JP5998479B2 (ja) 2011-12-28 2011-12-28 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
JPJP-P-2011-290068 2011-12-28

Publications (1)

Publication Number Publication Date
KR20130076732A true KR20130076732A (ko) 2013-07-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120152330A Withdrawn KR20130076732A (ko) 2011-12-28 2012-12-24 광 전도 안테나, 테라헤르츠파 발생 장치, 카메라, 이미징 장치 및 계측 장치

Country Status (6)

Country Link
US (1) US8872107B2 (enExample)
EP (1) EP2610923A3 (enExample)
JP (1) JP5998479B2 (enExample)
KR (1) KR20130076732A (enExample)
CN (1) CN103187679A (enExample)
TW (1) TW201328087A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210033698A (ko) * 2019-09-19 2021-03-29 한국전력공사 대구경 어레이형 테라헤르츠 광전도 안테나

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481825B (zh) * 2013-11-21 2015-04-21 Finetek Co Ltd Level detection device with integrated lens antenna
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP6485624B2 (ja) * 2014-10-28 2019-03-20 セイコーエプソン株式会社 計測装置
NL2015262B9 (en) * 2015-08-04 2017-04-10 Univ Delft Tech Photoconductive antenna array.
JP2017084991A (ja) * 2015-10-29 2017-05-18 セイコーエプソン株式会社 テラヘルツ波発生装置、イメージング装置、カメラ、および計測装置
WO2017126204A1 (ja) * 2016-01-20 2017-07-27 ソニー株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
CN114503360B (zh) * 2019-10-10 2023-11-03 罗姆股份有限公司 太赫兹装置

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US5371399A (en) * 1991-06-14 1994-12-06 International Business Machines Corporation Compound semiconductor having metallic inclusions and devices fabricated therefrom
US5894125A (en) * 1997-08-18 1999-04-13 Lucent Technologies Inc. Near field terahertz imaging
GB2396695B (en) * 2001-01-16 2005-05-04 Teraview Ltd Apparatus and method for investigating a sample
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
CN1993869A (zh) * 2004-07-30 2007-07-04 佳能株式会社 光学半导体器件
JP2006313803A (ja) 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
JP2007300022A (ja) 2006-05-02 2007-11-15 Material Design Factory:Kk テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
US9117133B2 (en) * 2008-06-18 2015-08-25 Spectral Image, Inc. Systems and methods for hyperspectral imaging
JP5419411B2 (ja) * 2008-10-08 2014-02-19 キヤノン株式会社 テラヘルツ波発生素子
KR101385108B1 (ko) * 2009-12-17 2014-04-29 한국전자통신연구원 포토믹서 모듈 및 그것의 테라헤르츠파 발생 방법
JP5582822B2 (ja) * 2010-02-26 2014-09-03 キヤノン株式会社 電磁波発生装置
JP5709562B2 (ja) * 2010-03-04 2015-04-30 キヤノン株式会社 テラヘルツ波発生素子、およびテラヘルツ時間領域分光装置
JP2011202972A (ja) * 2010-03-24 2011-10-13 Fujitsu Ltd イメージング装置
JP5418916B2 (ja) * 2010-06-04 2014-02-19 日本電気株式会社 反射型イメージング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210033698A (ko) * 2019-09-19 2021-03-29 한국전력공사 대구경 어레이형 테라헤르츠 광전도 안테나

Also Published As

Publication number Publication date
EP2610923A3 (en) 2017-08-16
TW201328087A (zh) 2013-07-01
JP2013140854A (ja) 2013-07-18
US8872107B2 (en) 2014-10-28
US20130168550A1 (en) 2013-07-04
CN103187679A (zh) 2013-07-03
EP2610923A2 (en) 2013-07-03
JP5998479B2 (ja) 2016-09-28

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20121224

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid