CN103187679A - 光导天线、太赫兹波产生装置、拍摄装置、成像装置 - Google Patents
光导天线、太赫兹波产生装置、拍摄装置、成像装置 Download PDFInfo
- Publication number
- CN103187679A CN103187679A CN2012105753357A CN201210575335A CN103187679A CN 103187679 A CN103187679 A CN 103187679A CN 2012105753357 A CN2012105753357 A CN 2012105753357A CN 201210575335 A CN201210575335 A CN 201210575335A CN 103187679 A CN103187679 A CN 103187679A
- Authority
- CN
- China
- Prior art keywords
- terahertz wave
- semiconductor layer
- photoconductive antenna
- type semiconductor
- thz wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011290068A JP5998479B2 (ja) | 2011-12-28 | 2011-12-28 | 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
| JP2011-290068 | 2011-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103187679A true CN103187679A (zh) | 2013-07-03 |
Family
ID=47678515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105753357A Pending CN103187679A (zh) | 2011-12-28 | 2012-12-26 | 光导天线、太赫兹波产生装置、拍摄装置、成像装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8872107B2 (enExample) |
| EP (1) | EP2610923A3 (enExample) |
| JP (1) | JP5998479B2 (enExample) |
| KR (1) | KR20130076732A (enExample) |
| CN (1) | CN103187679A (enExample) |
| TW (1) | TW201328087A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836098A (zh) * | 2014-02-07 | 2015-08-12 | 精工爱普生株式会社 | 光导天线、拍摄装置、成像装置以及测量装置 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI481825B (zh) * | 2013-11-21 | 2015-04-21 | Finetek Co Ltd | Level detection device with integrated lens antenna |
| JP6485624B2 (ja) * | 2014-10-28 | 2019-03-20 | セイコーエプソン株式会社 | 計測装置 |
| NL2015262B9 (en) * | 2015-08-04 | 2017-04-10 | Univ Delft Tech | Photoconductive antenna array. |
| JP2017084991A (ja) * | 2015-10-29 | 2017-05-18 | セイコーエプソン株式会社 | テラヘルツ波発生装置、イメージング装置、カメラ、および計測装置 |
| WO2017126204A1 (ja) * | 2016-01-20 | 2017-07-27 | ソニー株式会社 | 受光素子、受光素子の製造方法、撮像素子および電子機器 |
| KR102666357B1 (ko) * | 2019-09-19 | 2024-05-17 | 한국전력공사 | 대구경 어레이형 테라헤르츠 광전도 안테나 |
| CN114503360B (zh) * | 2019-10-10 | 2023-11-03 | 罗姆股份有限公司 | 太赫兹装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065832A1 (en) * | 2001-01-16 | 2004-04-08 | Cluff Julian Alexander | Apparatus and method for investigating a sample |
| CN1993869A (zh) * | 2004-07-30 | 2007-07-04 | 佳能株式会社 | 光学半导体器件 |
| US20090051452A1 (en) * | 2007-08-20 | 2009-02-26 | Canon Kabushiki Kaisha | Oscillation device and inspection apparatus |
| US20090326383A1 (en) * | 2008-06-18 | 2009-12-31 | Michael Barnes | Systems and methods for hyperspectral imaging |
| WO2011152285A1 (ja) * | 2010-06-04 | 2011-12-08 | 日本電気株式会社 | 反射型イメージング装置およびイメージ取得方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5371399A (en) * | 1991-06-14 | 1994-12-06 | International Business Machines Corporation | Compound semiconductor having metallic inclusions and devices fabricated therefrom |
| US5894125A (en) * | 1997-08-18 | 1999-04-13 | Lucent Technologies Inc. | Near field terahertz imaging |
| JP3913253B2 (ja) * | 2004-07-30 | 2007-05-09 | キヤノン株式会社 | 光半導体装置およびその製造方法 |
| JP2006313803A (ja) | 2005-05-09 | 2006-11-16 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生装置 |
| JP2007300022A (ja) | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
| JP5419411B2 (ja) * | 2008-10-08 | 2014-02-19 | キヤノン株式会社 | テラヘルツ波発生素子 |
| KR101385108B1 (ko) * | 2009-12-17 | 2014-04-29 | 한국전자통신연구원 | 포토믹서 모듈 및 그것의 테라헤르츠파 발생 방법 |
| JP5582822B2 (ja) * | 2010-02-26 | 2014-09-03 | キヤノン株式会社 | 電磁波発生装置 |
| JP5709562B2 (ja) * | 2010-03-04 | 2015-04-30 | キヤノン株式会社 | テラヘルツ波発生素子、およびテラヘルツ時間領域分光装置 |
| JP2011202972A (ja) * | 2010-03-24 | 2011-10-13 | Fujitsu Ltd | イメージング装置 |
-
2011
- 2011-12-28 JP JP2011290068A patent/JP5998479B2/ja not_active Expired - Fee Related
-
2012
- 2012-12-18 US US13/717,857 patent/US8872107B2/en not_active Expired - Fee Related
- 2012-12-21 EP EP12199071.7A patent/EP2610923A3/en not_active Withdrawn
- 2012-12-24 KR KR1020120152330A patent/KR20130076732A/ko not_active Withdrawn
- 2012-12-25 TW TW101149905A patent/TW201328087A/zh unknown
- 2012-12-26 CN CN2012105753357A patent/CN103187679A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065832A1 (en) * | 2001-01-16 | 2004-04-08 | Cluff Julian Alexander | Apparatus and method for investigating a sample |
| CN1993869A (zh) * | 2004-07-30 | 2007-07-04 | 佳能株式会社 | 光学半导体器件 |
| US20090051452A1 (en) * | 2007-08-20 | 2009-02-26 | Canon Kabushiki Kaisha | Oscillation device and inspection apparatus |
| US20090326383A1 (en) * | 2008-06-18 | 2009-12-31 | Michael Barnes | Systems and methods for hyperspectral imaging |
| WO2011152285A1 (ja) * | 2010-06-04 | 2011-12-08 | 日本電気株式会社 | 反射型イメージング装置およびイメージ取得方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836098A (zh) * | 2014-02-07 | 2015-08-12 | 精工爱普生株式会社 | 光导天线、拍摄装置、成像装置以及测量装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2610923A3 (en) | 2017-08-16 |
| TW201328087A (zh) | 2013-07-01 |
| JP2013140854A (ja) | 2013-07-18 |
| KR20130076732A (ko) | 2013-07-08 |
| US8872107B2 (en) | 2014-10-28 |
| US20130168550A1 (en) | 2013-07-04 |
| EP2610923A2 (en) | 2013-07-03 |
| JP5998479B2 (ja) | 2016-09-28 |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130703 |