JP5998479B2 - 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 - Google Patents

光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Download PDF

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Publication number
JP5998479B2
JP5998479B2 JP2011290068A JP2011290068A JP5998479B2 JP 5998479 B2 JP5998479 B2 JP 5998479B2 JP 2011290068 A JP2011290068 A JP 2011290068A JP 2011290068 A JP2011290068 A JP 2011290068A JP 5998479 B2 JP5998479 B2 JP 5998479B2
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Japan
Prior art keywords
conductive layer
layer
terahertz wave
semiconductor
semiconductor layer
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Expired - Fee Related
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JP2011290068A
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English (en)
Japanese (ja)
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JP2013140854A (ja
JP2013140854A5 (enExample
Inventor
紘斗 冨岡
紘斗 冨岡
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Seiko Epson Corp
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Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2011290068A priority Critical patent/JP5998479B2/ja
Priority to US13/717,857 priority patent/US8872107B2/en
Priority to EP12199071.7A priority patent/EP2610923A3/en
Priority to KR1020120152330A priority patent/KR20130076732A/ko
Priority to TW101149905A priority patent/TW201328087A/zh
Priority to CN2012105753357A priority patent/CN103187679A/zh
Publication of JP2013140854A publication Critical patent/JP2013140854A/ja
Publication of JP2013140854A5 publication Critical patent/JP2013140854A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
JP2011290068A 2011-12-28 2011-12-28 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 Expired - Fee Related JP5998479B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011290068A JP5998479B2 (ja) 2011-12-28 2011-12-28 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
US13/717,857 US8872107B2 (en) 2011-12-28 2012-12-18 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device
EP12199071.7A EP2610923A3 (en) 2011-12-28 2012-12-21 Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device
KR1020120152330A KR20130076732A (ko) 2011-12-28 2012-12-24 광 전도 안테나, 테라헤르츠파 발생 장치, 카메라, 이미징 장치 및 계측 장치
TW101149905A TW201328087A (zh) 2011-12-28 2012-12-25 光傳導天線、兆赫波產生裝置、相機、成像裝置及測量裝置
CN2012105753357A CN103187679A (zh) 2011-12-28 2012-12-26 光导天线、太赫兹波产生装置、拍摄装置、成像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011290068A JP5998479B2 (ja) 2011-12-28 2011-12-28 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

Publications (3)

Publication Number Publication Date
JP2013140854A JP2013140854A (ja) 2013-07-18
JP2013140854A5 JP2013140854A5 (enExample) 2015-02-19
JP5998479B2 true JP5998479B2 (ja) 2016-09-28

Family

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Family Applications (1)

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JP2011290068A Expired - Fee Related JP5998479B2 (ja) 2011-12-28 2011-12-28 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置

Country Status (6)

Country Link
US (1) US8872107B2 (enExample)
EP (1) EP2610923A3 (enExample)
JP (1) JP5998479B2 (enExample)
KR (1) KR20130076732A (enExample)
CN (1) CN103187679A (enExample)
TW (1) TW201328087A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481825B (zh) * 2013-11-21 2015-04-21 Finetek Co Ltd Level detection device with integrated lens antenna
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
JP6485624B2 (ja) * 2014-10-28 2019-03-20 セイコーエプソン株式会社 計測装置
NL2015262B9 (en) * 2015-08-04 2017-04-10 Univ Delft Tech Photoconductive antenna array.
JP2017084991A (ja) * 2015-10-29 2017-05-18 セイコーエプソン株式会社 テラヘルツ波発生装置、イメージング装置、カメラ、および計測装置
CN108369967B (zh) * 2016-01-20 2021-12-14 索尼公司 光接收元件、光接收元件的制造方法、成像元件和电子设备
KR102666357B1 (ko) * 2019-09-19 2024-05-17 한국전력공사 대구경 어레이형 테라헤르츠 광전도 안테나
JP7577675B2 (ja) * 2019-10-10 2024-11-05 ローム株式会社 テラヘルツ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371399A (en) * 1991-06-14 1994-12-06 International Business Machines Corporation Compound semiconductor having metallic inclusions and devices fabricated therefrom
US5894125A (en) * 1997-08-18 1999-04-13 Lucent Technologies Inc. Near field terahertz imaging
GB2396695B (en) * 2001-01-16 2005-05-04 Teraview Ltd Apparatus and method for investigating a sample
CN1993869A (zh) * 2004-07-30 2007-07-04 佳能株式会社 光学半导体器件
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP2006313803A (ja) 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
JP2007300022A (ja) 2006-05-02 2007-11-15 Material Design Factory:Kk テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
US9117133B2 (en) * 2008-06-18 2015-08-25 Spectral Image, Inc. Systems and methods for hyperspectral imaging
JP5419411B2 (ja) * 2008-10-08 2014-02-19 キヤノン株式会社 テラヘルツ波発生素子
KR101385108B1 (ko) * 2009-12-17 2014-04-29 한국전자통신연구원 포토믹서 모듈 및 그것의 테라헤르츠파 발생 방법
JP5582822B2 (ja) * 2010-02-26 2014-09-03 キヤノン株式会社 電磁波発生装置
JP5709562B2 (ja) * 2010-03-04 2015-04-30 キヤノン株式会社 テラヘルツ波発生素子、およびテラヘルツ時間領域分光装置
JP2011202972A (ja) * 2010-03-24 2011-10-13 Fujitsu Ltd イメージング装置
JP5418916B2 (ja) * 2010-06-04 2014-02-19 日本電気株式会社 反射型イメージング装置

Also Published As

Publication number Publication date
EP2610923A2 (en) 2013-07-03
EP2610923A3 (en) 2017-08-16
JP2013140854A (ja) 2013-07-18
US8872107B2 (en) 2014-10-28
TW201328087A (zh) 2013-07-01
US20130168550A1 (en) 2013-07-04
CN103187679A (zh) 2013-07-03
KR20130076732A (ko) 2013-07-08

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