TW201328087A - 光傳導天線、兆赫波產生裝置、相機、成像裝置及測量裝置 - Google Patents
光傳導天線、兆赫波產生裝置、相機、成像裝置及測量裝置 Download PDFInfo
- Publication number
- TW201328087A TW201328087A TW101149905A TW101149905A TW201328087A TW 201328087 A TW201328087 A TW 201328087A TW 101149905 A TW101149905 A TW 101149905A TW 101149905 A TW101149905 A TW 101149905A TW 201328087 A TW201328087 A TW 201328087A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- megahertz
- semiconductor layer
- megahertz wave
- detecting unit
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 274
- 239000000463 material Substances 0.000 claims abstract description 52
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- 239000000758 substrate Substances 0.000 claims description 40
- 238000001514 detection method Methods 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 21
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
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- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 230000001066 destructive effect Effects 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011290068A JP5998479B2 (ja) | 2011-12-28 | 2011-12-28 | 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201328087A true TW201328087A (zh) | 2013-07-01 |
Family
ID=47678515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101149905A TW201328087A (zh) | 2011-12-28 | 2012-12-25 | 光傳導天線、兆赫波產生裝置、相機、成像裝置及測量裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8872107B2 (enExample) |
| EP (1) | EP2610923A3 (enExample) |
| JP (1) | JP5998479B2 (enExample) |
| KR (1) | KR20130076732A (enExample) |
| CN (1) | CN103187679A (enExample) |
| TW (1) | TW201328087A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI481825B (zh) * | 2013-11-21 | 2015-04-21 | Finetek Co Ltd | Level detection device with integrated lens antenna |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015148541A (ja) * | 2014-02-07 | 2015-08-20 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
| JP6485624B2 (ja) * | 2014-10-28 | 2019-03-20 | セイコーエプソン株式会社 | 計測装置 |
| NL2015262B9 (en) * | 2015-08-04 | 2017-04-10 | Univ Delft Tech | Photoconductive antenna array. |
| JP2017084991A (ja) * | 2015-10-29 | 2017-05-18 | セイコーエプソン株式会社 | テラヘルツ波発生装置、イメージング装置、カメラ、および計測装置 |
| WO2017126204A1 (ja) * | 2016-01-20 | 2017-07-27 | ソニー株式会社 | 受光素子、受光素子の製造方法、撮像素子および電子機器 |
| KR102666357B1 (ko) * | 2019-09-19 | 2024-05-17 | 한국전력공사 | 대구경 어레이형 테라헤르츠 광전도 안테나 |
| CN114503360B (zh) * | 2019-10-10 | 2023-11-03 | 罗姆股份有限公司 | 太赫兹装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5371399A (en) * | 1991-06-14 | 1994-12-06 | International Business Machines Corporation | Compound semiconductor having metallic inclusions and devices fabricated therefrom |
| US5894125A (en) * | 1997-08-18 | 1999-04-13 | Lucent Technologies Inc. | Near field terahertz imaging |
| GB2396695B (en) * | 2001-01-16 | 2005-05-04 | Teraview Ltd | Apparatus and method for investigating a sample |
| JP3913253B2 (ja) * | 2004-07-30 | 2007-05-09 | キヤノン株式会社 | 光半導体装置およびその製造方法 |
| CN1993869A (zh) * | 2004-07-30 | 2007-07-04 | 佳能株式会社 | 光学半导体器件 |
| JP2006313803A (ja) | 2005-05-09 | 2006-11-16 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生装置 |
| JP2007300022A (ja) | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
| JP5127360B2 (ja) * | 2007-08-20 | 2013-01-23 | キヤノン株式会社 | 発振素子、及び検査装置 |
| US9117133B2 (en) * | 2008-06-18 | 2015-08-25 | Spectral Image, Inc. | Systems and methods for hyperspectral imaging |
| JP5419411B2 (ja) * | 2008-10-08 | 2014-02-19 | キヤノン株式会社 | テラヘルツ波発生素子 |
| KR101385108B1 (ko) * | 2009-12-17 | 2014-04-29 | 한국전자통신연구원 | 포토믹서 모듈 및 그것의 테라헤르츠파 발생 방법 |
| JP5582822B2 (ja) * | 2010-02-26 | 2014-09-03 | キヤノン株式会社 | 電磁波発生装置 |
| JP5709562B2 (ja) * | 2010-03-04 | 2015-04-30 | キヤノン株式会社 | テラヘルツ波発生素子、およびテラヘルツ時間領域分光装置 |
| JP2011202972A (ja) * | 2010-03-24 | 2011-10-13 | Fujitsu Ltd | イメージング装置 |
| JP5418916B2 (ja) * | 2010-06-04 | 2014-02-19 | 日本電気株式会社 | 反射型イメージング装置 |
-
2011
- 2011-12-28 JP JP2011290068A patent/JP5998479B2/ja not_active Expired - Fee Related
-
2012
- 2012-12-18 US US13/717,857 patent/US8872107B2/en not_active Expired - Fee Related
- 2012-12-21 EP EP12199071.7A patent/EP2610923A3/en not_active Withdrawn
- 2012-12-24 KR KR1020120152330A patent/KR20130076732A/ko not_active Withdrawn
- 2012-12-25 TW TW101149905A patent/TW201328087A/zh unknown
- 2012-12-26 CN CN2012105753357A patent/CN103187679A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI481825B (zh) * | 2013-11-21 | 2015-04-21 | Finetek Co Ltd | Level detection device with integrated lens antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2610923A3 (en) | 2017-08-16 |
| JP2013140854A (ja) | 2013-07-18 |
| KR20130076732A (ko) | 2013-07-08 |
| US8872107B2 (en) | 2014-10-28 |
| US20130168550A1 (en) | 2013-07-04 |
| CN103187679A (zh) | 2013-07-03 |
| EP2610923A2 (en) | 2013-07-03 |
| JP5998479B2 (ja) | 2016-09-28 |
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