KR20130050301A - 태양 전지 제조 방법 - Google Patents

태양 전지 제조 방법 Download PDF

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Publication number
KR20130050301A
KR20130050301A KR1020127029330A KR20127029330A KR20130050301A KR 20130050301 A KR20130050301 A KR 20130050301A KR 1020127029330 A KR1020127029330 A KR 1020127029330A KR 20127029330 A KR20127029330 A KR 20127029330A KR 20130050301 A KR20130050301 A KR 20130050301A
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KR
South Korea
Prior art keywords
major surface
silicon substrate
containing layer
oxide
oxide containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127029330A
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English (en)
Korean (ko)
Inventor
팀 뵈스케
Original Assignee
로베르트 보쉬 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로베르트 보쉬 게엠베하 filed Critical 로베르트 보쉬 게엠베하
Publication of KR20130050301A publication Critical patent/KR20130050301A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
KR1020127029330A 2010-04-09 2011-02-16 태양 전지 제조 방법 Withdrawn KR20130050301A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010003784.2 2010-04-09
DE102010003784A DE102010003784A1 (de) 2010-04-09 2010-04-09 Verfahren zur Herstellung einer Solarzelle
PCT/EP2011/052257 WO2011124409A2 (de) 2010-04-09 2011-02-16 Verfahren zur herstellung einer solarzelle

Publications (1)

Publication Number Publication Date
KR20130050301A true KR20130050301A (ko) 2013-05-15

Family

ID=44625123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127029330A Withdrawn KR20130050301A (ko) 2010-04-09 2011-02-16 태양 전지 제조 방법

Country Status (7)

Country Link
US (1) US20130089942A1 (https=)
EP (1) EP2556545A2 (https=)
JP (1) JP5656095B2 (https=)
KR (1) KR20130050301A (https=)
CN (1) CN102822988B (https=)
DE (1) DE102010003784A1 (https=)
WO (1) WO2011124409A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180054491A (ko) * 2016-01-29 2018-05-24 엘지전자 주식회사 태양전지의 제조 방법
US10050170B2 (en) 2016-01-29 2018-08-14 Lg Electronics Inc. Method of manufacturing solar cell
KR20190025429A (ko) * 2017-09-01 2019-03-11 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013106019A (ja) * 2011-11-17 2013-05-30 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US8969130B2 (en) * 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
JP5737204B2 (ja) * 2012-02-02 2015-06-17 信越化学工業株式会社 太陽電池及びその製造方法
US9224906B2 (en) 2012-03-20 2015-12-29 Tempress Ip B.V. Method for manufacturing a solar cell
KR101430054B1 (ko) 2012-09-20 2014-08-18 한국기술교육대학교 산학협력단 결정질 실리콘 태양전지의 제조 방법
DE102013218351A1 (de) * 2013-09-13 2015-03-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
CN103700723B (zh) * 2013-12-20 2016-06-01 浙江正泰太阳能科技有限公司 一种硼背场太阳能电池的制备方法
CN103681971B (zh) * 2013-12-23 2016-01-20 苏州阿特斯阳光电力科技有限公司 一种n型背结太阳能电池的制备方法
KR102320551B1 (ko) * 2015-01-16 2021-11-01 엘지전자 주식회사 태양 전지의 제조 방법
TWI568012B (zh) * 2015-06-11 2017-01-21 太極能源科技股份有限公司 雙面太陽能電池製造方法
CN113113510A (zh) * 2021-04-09 2021-07-13 通威太阳能(成都)有限公司 一种p型双面perc太阳电池及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388285B1 (en) * 1999-06-04 2002-05-14 International Business Machines Corporation Feram cell with internal oxygen source and method of oxygen release
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
DE102007041392A1 (de) * 2007-08-31 2009-03-05 Q-Cells Ag Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht
KR100997113B1 (ko) * 2008-08-01 2010-11-30 엘지전자 주식회사 태양전지 및 그의 제조방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180054491A (ko) * 2016-01-29 2018-05-24 엘지전자 주식회사 태양전지의 제조 방법
US10050170B2 (en) 2016-01-29 2018-08-14 Lg Electronics Inc. Method of manufacturing solar cell
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell
KR20190025429A (ko) * 2017-09-01 2019-03-11 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치

Also Published As

Publication number Publication date
CN102822988A (zh) 2012-12-12
US20130089942A1 (en) 2013-04-11
CN102822988B (zh) 2016-11-16
WO2011124409A3 (de) 2012-05-10
WO2011124409A2 (de) 2011-10-13
EP2556545A2 (de) 2013-02-13
JP5656095B2 (ja) 2015-01-21
DE102010003784A1 (de) 2011-10-13
JP2013524524A (ja) 2013-06-17

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Date Code Title Description
PA0105 International application

Patent event date: 20121108

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid