CN102822988B - 用于制造太阳能的电池的方法 - Google Patents

用于制造太阳能的电池的方法 Download PDF

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Publication number
CN102822988B
CN102822988B CN201180017924.7A CN201180017924A CN102822988B CN 102822988 B CN102822988 B CN 102822988B CN 201180017924 A CN201180017924 A CN 201180017924A CN 102822988 B CN102822988 B CN 102822988B
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China
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type surface
layer
silicon substrate
oxycompound
methods according
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Expired - Fee Related
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CN201180017924.7A
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English (en)
Chinese (zh)
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CN102822988A (zh
Inventor
T.贝斯克
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SolarWorld Industries Thueringen GmbH
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SolarWorld Industries Thueringen GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
CN201180017924.7A 2010-04-09 2011-02-16 用于制造太阳能的电池的方法 Expired - Fee Related CN102822988B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010003784.2 2010-04-09
DE102010003784A DE102010003784A1 (de) 2010-04-09 2010-04-09 Verfahren zur Herstellung einer Solarzelle
PCT/EP2011/052257 WO2011124409A2 (de) 2010-04-09 2011-02-16 Verfahren zur herstellung einer solarzelle

Publications (2)

Publication Number Publication Date
CN102822988A CN102822988A (zh) 2012-12-12
CN102822988B true CN102822988B (zh) 2016-11-16

Family

ID=44625123

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180017924.7A Expired - Fee Related CN102822988B (zh) 2010-04-09 2011-02-16 用于制造太阳能的电池的方法

Country Status (7)

Country Link
US (1) US20130089942A1 (https=)
EP (1) EP2556545A2 (https=)
JP (1) JP5656095B2 (https=)
KR (1) KR20130050301A (https=)
CN (1) CN102822988B (https=)
DE (1) DE102010003784A1 (https=)
WO (1) WO2011124409A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013106019A (ja) * 2011-11-17 2013-05-30 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US8969130B2 (en) * 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
JP5737204B2 (ja) * 2012-02-02 2015-06-17 信越化学工業株式会社 太陽電池及びその製造方法
US9224906B2 (en) 2012-03-20 2015-12-29 Tempress Ip B.V. Method for manufacturing a solar cell
KR101430054B1 (ko) 2012-09-20 2014-08-18 한국기술교육대학교 산학협력단 결정질 실리콘 태양전지의 제조 방법
DE102013218351A1 (de) * 2013-09-13 2015-03-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
CN103700723B (zh) * 2013-12-20 2016-06-01 浙江正泰太阳能科技有限公司 一种硼背场太阳能电池的制备方法
CN103681971B (zh) * 2013-12-23 2016-01-20 苏州阿特斯阳光电力科技有限公司 一种n型背结太阳能电池的制备方法
KR102320551B1 (ko) * 2015-01-16 2021-11-01 엘지전자 주식회사 태양 전지의 제조 방법
TWI568012B (zh) * 2015-06-11 2017-01-21 太極能源科技股份有限公司 雙面太陽能電池製造方法
KR20170090989A (ko) * 2016-01-29 2017-08-08 엘지전자 주식회사 태양전지의 제조 방법
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell
CN110061096B (zh) 2016-01-29 2023-02-28 上饶市晶科绿能科技发展有限公司 制造太阳能电池的方法
KR102053912B1 (ko) * 2017-09-01 2019-12-09 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
CN113113510A (zh) * 2021-04-09 2021-07-13 通威太阳能（成都）有限公司 一种p型双面perc太阳电池及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1276629A (zh) * 1999-06-04 2000-12-13 国际商业机器公司 具有内部氧源的铁电随机存储单元及释放氧的方法
DE102007041392A1 (de) * 2007-08-31 2009-03-05 Q-Cells Ag Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
KR100997113B1 (ko) * 2008-08-01 2010-11-30 엘지전자 주식회사 태양전지 및 그의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1276629A (zh) * 1999-06-04 2000-12-13 国际商业机器公司 具有内部氧源的铁电随机存储单元及释放氧的方法
DE102007041392A1 (de) * 2007-08-31 2009-03-05 Q-Cells Ag Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht

Also Published As

Publication number Publication date
CN102822988A (zh) 2012-12-12
US20130089942A1 (en) 2013-04-11
KR20130050301A (ko) 2013-05-15
WO2011124409A3 (de) 2012-05-10
WO2011124409A2 (de) 2011-10-13
EP2556545A2 (de) 2013-02-13
JP5656095B2 (ja) 2015-01-21
DE102010003784A1 (de) 2011-10-13
JP2013524524A (ja) 2013-06-17

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Effective date of registration: 20160824

Address after: German Arne Skei Tate

Applicant after: SOLARWORLD INDUSTRIES THUERINGEN GMBH

Address before: Stuttgart, Germany

Applicant before: Robert Bosch Ltd.

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Granted publication date: 20161116

Termination date: 20210216

CF01 Termination of patent right due to non-payment of annual fee