JP5656095B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JP5656095B2 JP5656095B2 JP2013503046A JP2013503046A JP5656095B2 JP 5656095 B2 JP5656095 B2 JP 5656095B2 JP 2013503046 A JP2013503046 A JP 2013503046A JP 2013503046 A JP2013503046 A JP 2013503046A JP 5656095 B2 JP5656095 B2 JP 5656095B2
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- Prior art keywords
- main surface
- oxide
- layer
- silicon substrate
- containing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 73
- 229910052710 silicon Inorganic materials 0.000 claims description 73
- 239000010703 silicon Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 230000000873 masking effect Effects 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 65
- 238000004140 cleaning Methods 0.000 description 14
- 230000008901 benefit Effects 0.000 description 9
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010003784.2 | 2010-04-09 | ||
| DE102010003784A DE102010003784A1 (de) | 2010-04-09 | 2010-04-09 | Verfahren zur Herstellung einer Solarzelle |
| PCT/EP2011/052257 WO2011124409A2 (de) | 2010-04-09 | 2011-02-16 | Verfahren zur herstellung einer solarzelle |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524524A JP2013524524A (ja) | 2013-06-17 |
| JP2013524524A5 JP2013524524A5 (https=) | 2013-07-25 |
| JP5656095B2 true JP5656095B2 (ja) | 2015-01-21 |
Family
ID=44625123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013503046A Expired - Fee Related JP5656095B2 (ja) | 2010-04-09 | 2011-02-16 | 太陽電池の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20130089942A1 (https=) |
| EP (1) | EP2556545A2 (https=) |
| JP (1) | JP5656095B2 (https=) |
| KR (1) | KR20130050301A (https=) |
| CN (1) | CN102822988B (https=) |
| DE (1) | DE102010003784A1 (https=) |
| WO (1) | WO2011124409A2 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013106019A (ja) * | 2011-11-17 | 2013-05-30 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
| US8969130B2 (en) * | 2011-11-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
| JP5737204B2 (ja) * | 2012-02-02 | 2015-06-17 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
| US9224906B2 (en) | 2012-03-20 | 2015-12-29 | Tempress Ip B.V. | Method for manufacturing a solar cell |
| KR101430054B1 (ko) | 2012-09-20 | 2014-08-18 | 한국기술교육대학교 산학협력단 | 결정질 실리콘 태양전지의 제조 방법 |
| DE102013218351A1 (de) * | 2013-09-13 | 2015-03-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
| DE102013219603A1 (de) * | 2013-09-27 | 2015-04-02 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Herstellung einer Solarzelle |
| CN103700723B (zh) * | 2013-12-20 | 2016-06-01 | 浙江正泰太阳能科技有限公司 | 一种硼背场太阳能电池的制备方法 |
| CN103681971B (zh) * | 2013-12-23 | 2016-01-20 | 苏州阿特斯阳光电力科技有限公司 | 一种n型背结太阳能电池的制备方法 |
| KR102320551B1 (ko) * | 2015-01-16 | 2021-11-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| TWI568012B (zh) * | 2015-06-11 | 2017-01-21 | 太極能源科技股份有限公司 | 雙面太陽能電池製造方法 |
| KR20170090989A (ko) * | 2016-01-29 | 2017-08-08 | 엘지전자 주식회사 | 태양전지의 제조 방법 |
| US10367115B2 (en) | 2016-01-29 | 2019-07-30 | Lg Electronics Inc. | Method of manufacturing solar cell |
| CN110061096B (zh) | 2016-01-29 | 2023-02-28 | 上饶市晶科绿能科技发展有限公司 | 制造太阳能电池的方法 |
| KR102053912B1 (ko) * | 2017-09-01 | 2019-12-09 | 주식회사 한화 | 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치 |
| CN113113510A (zh) * | 2021-04-09 | 2021-07-13 | 通威太阳能（成都）有限公司 | 一种p型双面perc太阳电池及其制备方法和应用 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6388285B1 (en) * | 1999-06-04 | 2002-05-14 | International Business Machines Corporation | Feram cell with internal oxygen source and method of oxygen release |
| JP2006073617A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 太陽電池およびその製造方法 |
| DE102007041392A1 (de) * | 2007-08-31 | 2009-03-05 | Q-Cells Ag | Verfahren zum Fertigen einer Solarzelle mit einer doppellagigen Dielektrikumschicht |
| KR100997113B1 (ko) * | 2008-08-01 | 2010-11-30 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법 |
-
2010
- 2010-04-09 DE DE102010003784A patent/DE102010003784A1/de not_active Withdrawn
-
2011
- 2011-02-16 JP JP2013503046A patent/JP5656095B2/ja not_active Expired - Fee Related
- 2011-02-16 EP EP11703234A patent/EP2556545A2/de not_active Withdrawn
- 2011-02-16 CN CN201180017924.7A patent/CN102822988B/zh not_active Expired - Fee Related
- 2011-02-16 KR KR1020127029330A patent/KR20130050301A/ko not_active Withdrawn
- 2011-02-16 US US13/640,165 patent/US20130089942A1/en not_active Abandoned
- 2011-02-16 WO PCT/EP2011/052257 patent/WO2011124409A2/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN102822988A (zh) | 2012-12-12 |
| US20130089942A1 (en) | 2013-04-11 |
| CN102822988B (zh) | 2016-11-16 |
| KR20130050301A (ko) | 2013-05-15 |
| WO2011124409A3 (de) | 2012-05-10 |
| WO2011124409A2 (de) | 2011-10-13 |
| EP2556545A2 (de) | 2013-02-13 |
| DE102010003784A1 (de) | 2011-10-13 |
| JP2013524524A (ja) | 2013-06-17 |
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