KR20120117792A - 광전자 소자용 하우징 그리고 하우징을 제조하기 위한 방법 - Google Patents

광전자 소자용 하우징 그리고 하우징을 제조하기 위한 방법 Download PDF

Info

Publication number
KR20120117792A
KR20120117792A KR1020127016558A KR20127016558A KR20120117792A KR 20120117792 A KR20120117792 A KR 20120117792A KR 1020127016558 A KR1020127016558 A KR 1020127016558A KR 20127016558 A KR20127016558 A KR 20127016558A KR 20120117792 A KR20120117792 A KR 20120117792A
Authority
KR
South Korea
Prior art keywords
housing
plastic material
coating
base body
housing base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127016558A
Other languages
English (en)
Korean (ko)
Inventor
게르트루트 크로이터
베른트 바르히만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120117792A publication Critical patent/KR20120117792A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Injection Moulding Of Plastics Or The Like (AREA)
  • Casings For Electric Apparatus (AREA)
  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR1020127016558A 2009-11-25 2010-11-02 광전자 소자용 하우징 그리고 하우징을 제조하기 위한 방법 Withdrawn KR20120117792A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009055786.5 2009-11-25
DE102009055786A DE102009055786A1 (de) 2009-11-25 2009-11-25 Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses

Publications (1)

Publication Number Publication Date
KR20120117792A true KR20120117792A (ko) 2012-10-24

Family

ID=43383620

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127016558A Withdrawn KR20120117792A (ko) 2009-11-25 2010-11-02 광전자 소자용 하우징 그리고 하우징을 제조하기 위한 방법

Country Status (8)

Country Link
US (1) US9006773B2 (enExample)
EP (1) EP2504861A1 (enExample)
JP (1) JP2013512556A (enExample)
KR (1) KR20120117792A (enExample)
CN (1) CN102630346A (enExample)
DE (1) DE102009055786A1 (enExample)
TW (1) TWI440227B (enExample)
WO (1) WO2011064072A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010013317B4 (de) * 2010-03-30 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil, Gehäuse hierfür und Verfahren zur Herstellung des optoelektronischen Bauteils
CN203260631U (zh) * 2010-07-01 2013-10-30 西铁城控股株式会社 Led光源装置
JP2014011029A (ja) * 2012-06-29 2014-01-20 Toshiba Lighting & Technology Corp 照明装置
WO2013025832A1 (en) * 2011-08-16 2013-02-21 E. I. Du Pont De Nemours And Company Reflector for light-emitting diode and housing
JP2013222499A (ja) * 2012-04-12 2013-10-28 Sharp Corp 光源基板ユニット
CN102779926B (zh) * 2012-08-02 2015-01-28 慧明光电(深圳)有限公司 高对比度的防水表贴led灯
DE102014102258B4 (de) 2014-02-21 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
DE102014106882A1 (de) * 2014-05-15 2015-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR102360957B1 (ko) * 2015-03-27 2022-02-11 삼성디스플레이 주식회사 발광 다이오드 패키지
EP3306683A4 (en) * 2015-06-01 2018-12-19 Mitsubishi Electric Corporation Light emitting device, display unit, and image display device
JP6728764B2 (ja) * 2016-02-26 2020-07-22 日亜化学工業株式会社 発光装置及びそれを用いた照明装置
JP7117170B2 (ja) * 2018-06-20 2022-08-12 スタンレー電気株式会社 発光装置
JP7212241B2 (ja) 2018-06-21 2023-01-25 日亜化学工業株式会社 発光装置
JP7190889B2 (ja) * 2018-12-07 2022-12-16 スタンレー電気株式会社 発光装置及び発光装置モジュール
TWI740149B (zh) * 2019-05-24 2021-09-21 華碩電腦股份有限公司 殼體的製造方法
CN113410374B (zh) * 2021-06-17 2022-10-04 中国科学院半导体研究所 一种混色led器件

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9319190U1 (de) 1993-12-14 1994-02-10 Ems-Inventa AG, Zürich Formteil mit resistenter Oberfläche
JP2000037726A (ja) 1998-07-21 2000-02-08 Toray Ind Inc 熱可塑性樹脂製品類のリサイクル方法
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20030133300A1 (en) * 2002-01-11 2003-07-17 Bily Wang Light absorbing wall for LED package
DE10229067B4 (de) 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
JP2004071950A (ja) 2002-08-08 2004-03-04 Matsushita Electric Ind Co Ltd 半導体パッケージおよびその製造方法
US7718451B2 (en) * 2003-02-28 2010-05-18 Osram Opto Semiconductor Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
DE102004031391B4 (de) 2004-06-29 2009-06-04 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit Gehäuse zum ESD-Schutz
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
DE102005036520A1 (de) 2005-04-26 2006-11-09 Osram Opto Semiconductors Gmbh Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung
JP2007042668A (ja) * 2005-07-29 2007-02-15 Toyoda Gosei Co Ltd Ｌｅｄ発光装置
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007262259A (ja) 2006-03-29 2007-10-11 Toray Ind Inc リサイクルポリアミド樹脂組成物
JP2007281260A (ja) * 2006-04-07 2007-10-25 Sumitomo Metal Electronics Devices Inc リフレクターとそれを用いた発光素子収納用パッケージ及びリフレクターに用いるレンズ
JP2008060344A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 半導体発光装置
JP4846498B2 (ja) * 2006-09-22 2011-12-28 株式会社東芝 光半導体装置及び光半導体装置の製造方法
DE102006046678A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
EP2089914A2 (en) 2006-11-09 2009-08-19 Quantum Leap Packaging, Inc. Led reflective package
DE102007017855A1 (de) 2007-04-16 2008-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
US7956469B2 (en) * 2007-07-27 2011-06-07 Nichia Corporation Light emitting device and method of manufacturing the same
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
DE102008038748B4 (de) 2008-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares, optoelektronisches Halbleiterbauteil

Also Published As

Publication number Publication date
WO2011064072A1 (de) 2011-06-03
DE102009055786A1 (de) 2011-05-26
US9006773B2 (en) 2015-04-14
EP2504861A1 (de) 2012-10-03
TW201131826A (en) 2011-09-16
TWI440227B (zh) 2014-06-01
JP2013512556A (ja) 2013-04-11
CN102630346A (zh) 2012-08-08
US20120273811A1 (en) 2012-11-01

Similar Documents

Publication Publication Date Title
KR20120117792A (ko) 광전자 소자용 하우징 그리고 하우징을 제조하기 위한 방법
JP4709487B2 (ja) オプトエレクトロニクスデバイス
JP5340157B2 (ja) オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法
JP5572013B2 (ja) 発光装置およびその製造方法
US9331255B2 (en) Housing that includes reflector part and housing material formed with plastic material
KR101759263B1 (ko) 광전자 소자 그리고 광전자 소자 및 복합 구조물을 제조하기 위한 방법
JP5755365B2 (ja) キャリア、キャリアを備えたオプトエレクトロニクスユニット、ならびにキャリアおよびオプトエレクトロニクスユニットの製造方法
KR20070004023A (ko) 다중 봉지층으로서 적어도 하나의 봉지층이 나노입자를포함하는 다중 봉지층을 구비하는 발광 소자 및 그의 형성방법
CN101222013A (zh) 用于发射和/或接收辐射的半导体元器件的外壳基体
JP6361645B2 (ja) 発光装置
JP5366399B2 (ja) 光電子半導体構成素子及び該構成素子のためのケーシング基体
KR101161383B1 (ko) 발광 다이오드 및 이를 제조하기 위한 방법
JP6216272B2 (ja) Ｌｅｄ発光装置
KR20090104518A (ko) 프로젝션 시스템용 발광 다이오드 패키지
KR101220038B1 (ko) 발광 장치
US10937933B2 (en) Light-emitting component and method of producing a light-emitting component
KR101334315B1 (ko) 발광 다이오드 램프 및 그것을 제조하는 방법
KR101309758B1 (ko) 발광 다이오드 램프 및 그것을 제조하는 방법
KR20090132087A (ko) Ｌｅｄ 패키지
KR20070035528A (ko) 광전 반도체 소자 및 상기 소자를 위한 하우징 베이스

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20120625

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid