KR20120085650A - 스택된 멀티-다이 패키지에서의 관통 실리콘 비아 재구성 - Google Patents

스택된 멀티-다이 패키지에서의 관통 실리콘 비아 재구성 Download PDF

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KR20120085650A
KR20120085650A KR1020117011810A KR20117011810A KR20120085650A KR 20120085650 A KR20120085650 A KR 20120085650A KR 1020117011810 A KR1020117011810 A KR 1020117011810A KR 20117011810 A KR20117011810 A KR 20117011810A KR 20120085650 A KR20120085650 A KR 20120085650A
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South Korea
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die
vias
integrated circuit
signal
configuration
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Korean (ko)
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롤란드 슈에츠
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모사이드 테크놀로지스 인코퍼레이티드
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Publication of KR20120085650A publication Critical patent/KR20120085650A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020117011810A 2009-10-19 2010-10-19 스택된 멀티-다이 패키지에서의 관통 실리콘 비아 재구성 Withdrawn KR20120085650A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25286509P 2009-10-19 2009-10-19
US61/252,865 2009-10-19
US12/773,340 US8604593B2 (en) 2009-10-19 2010-05-04 Reconfiguring through silicon vias in stacked multi-die packages
US12/773,340 2010-05-04
PCT/CA2010/001650 WO2011047470A1 (en) 2009-10-19 2010-10-19 Reconfiguring through silicon vias in stacked multi-die packages

Publications (1)

Publication Number Publication Date
KR20120085650A true KR20120085650A (ko) 2012-08-01

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KR1020117011810A Withdrawn KR20120085650A (ko) 2009-10-19 2010-10-19 스택된 멀티-다이 패키지에서의 관통 실리콘 비아 재구성

Country Status (7)

Country Link
US (2) US8604593B2 (enExample)
EP (1) EP2491589A4 (enExample)
JP (1) JP2013508941A (enExample)
KR (1) KR20120085650A (enExample)
CN (1) CN102227806A (enExample)
TW (1) TWI476889B (enExample)
WO (1) WO2011047470A1 (enExample)

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US7978721B2 (en) 2008-07-02 2011-07-12 Micron Technology Inc. Multi-serial interface stacked-die memory architecture
US8086913B2 (en) 2008-09-11 2011-12-27 Micron Technology, Inc. Methods, apparatus, and systems to repair memory
US9123552B2 (en) * 2010-03-30 2015-09-01 Micron Technology, Inc. Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same
US8362602B2 (en) * 2010-08-09 2013-01-29 Headway Technologies, Inc. Layered chip package and method of manufacturing same
US8916910B2 (en) * 2010-12-13 2014-12-23 Research Foundation Of State University Of New York Reconfigurable RF/digital hybrid 3D interconnect
KR101817156B1 (ko) * 2010-12-28 2018-01-10 삼성전자 주식회사 관통 전극을 갖는 적층 구조의 반도체 장치, 반도체 메모리 장치, 반도체 메모리 시스템 및 그 동작방법
KR101208962B1 (ko) * 2011-02-22 2012-12-06 에스케이하이닉스 주식회사 반도체 장치
US8624626B2 (en) 2011-11-14 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. 3D IC structure and method
US20130159587A1 (en) * 2011-12-15 2013-06-20 Aaron Nygren Interconnect Redundancy for Multi-Interconnect Device
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration
US9448947B2 (en) * 2012-06-01 2016-09-20 Qualcomm Incorporated Inter-chip memory interface structure
US9478502B2 (en) * 2012-07-26 2016-10-25 Micron Technology, Inc. Device identification assignment and total device number detection
US9026872B2 (en) * 2012-08-16 2015-05-05 Xilinx, Inc. Flexible sized die for use in multi-die integrated circuit
KR102058101B1 (ko) * 2012-12-20 2019-12-20 에스케이하이닉스 주식회사 반도체 집적회로
KR102190382B1 (ko) 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
US9612988B2 (en) * 2013-07-23 2017-04-04 International Business Machines Corporation Donor cores to improve integrated circuit yield
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9245825B2 (en) 2014-01-23 2016-01-26 Sandisk Technologies Inc. I/O pin capacitance reduction using TSVS
US9501603B2 (en) 2014-09-05 2016-11-22 International Business Machines Corporation Integrated circuit design changes using through-silicon vias
US10002653B2 (en) 2014-10-28 2018-06-19 Nxp Usa, Inc. Die stack address bus having a programmable width
KR102290020B1 (ko) * 2015-06-05 2021-08-19 삼성전자주식회사 스택드 칩 구조에서 소프트 데이터 페일 분석 및 구제 기능을 제공하는 반도체 메모리 장치
US9871020B1 (en) * 2016-07-14 2018-01-16 Globalfoundries Inc. Through silicon via sharing in a 3D integrated circuit
US10249590B2 (en) 2017-06-06 2019-04-02 Globalfoundries Inc. Stacked dies using one or more interposers
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US11048597B2 (en) * 2018-05-14 2021-06-29 Micron Technology, Inc. Memory die remapping
CN112102862B (zh) * 2020-09-22 2023-03-07 武汉新芯集成电路制造有限公司 芯片结构、数据读取处理方法及芯片结构制造方法
US11226767B1 (en) * 2020-09-30 2022-01-18 Micron Technology, Inc. Apparatus with access control mechanism and methods for operating the same
US11468945B2 (en) * 2020-10-15 2022-10-11 Arm Limited 3D storage architecture with tier-specific controls
US20250209027A1 (en) * 2023-12-22 2025-06-26 Intel Corporation Resilient i/o interconnect

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Also Published As

Publication number Publication date
EP2491589A1 (en) 2012-08-29
US8604593B2 (en) 2013-12-10
US20140097891A1 (en) 2014-04-10
WO2011047470A1 (en) 2011-04-28
JP2013508941A (ja) 2013-03-07
US9117685B2 (en) 2015-08-25
CN102227806A (zh) 2011-10-26
EP2491589A4 (en) 2015-07-22
TWI476889B (zh) 2015-03-11
TW201126682A (en) 2011-08-01
US20110090004A1 (en) 2011-04-21

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