TWI476889B - 在堆疊多晶片封裝中穿矽介層之重組態 - Google Patents

在堆疊多晶片封裝中穿矽介層之重組態 Download PDF

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Publication number
TWI476889B
TWI476889B TW099128670A TW99128670A TWI476889B TW I476889 B TWI476889 B TW I476889B TW 099128670 A TW099128670 A TW 099128670A TW 99128670 A TW99128670 A TW 99128670A TW I476889 B TWI476889 B TW I476889B
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TW
Taiwan
Prior art keywords
integrated circuit
die
layers
signal
vias
Prior art date
Application number
TW099128670A
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English (en)
Chinese (zh)
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TW201126682A (en
Inventor
羅蘭 舒茲
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考文森智財管理公司
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Publication of TW201126682A publication Critical patent/TW201126682A/zh
Application granted granted Critical
Publication of TWI476889B publication Critical patent/TWI476889B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW099128670A 2009-10-19 2010-08-26 在堆疊多晶片封裝中穿矽介層之重組態 TWI476889B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25286509P 2009-10-19 2009-10-19
US12/773,340 US8604593B2 (en) 2009-10-19 2010-05-04 Reconfiguring through silicon vias in stacked multi-die packages

Publications (2)

Publication Number Publication Date
TW201126682A TW201126682A (en) 2011-08-01
TWI476889B true TWI476889B (zh) 2015-03-11

Family

ID=43878833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099128670A TWI476889B (zh) 2009-10-19 2010-08-26 在堆疊多晶片封裝中穿矽介層之重組態

Country Status (7)

Country Link
US (2) US8604593B2 (enExample)
EP (1) EP2491589A4 (enExample)
JP (1) JP2013508941A (enExample)
KR (1) KR20120085650A (enExample)
CN (1) CN102227806A (enExample)
TW (1) TWI476889B (enExample)
WO (1) WO2011047470A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11328764B2 (en) * 2005-09-26 2022-05-10 Rambus Inc. Memory system topologies including a memory die stack
US9229887B2 (en) * 2008-02-19 2016-01-05 Micron Technology, Inc. Memory device with network on chip methods, apparatus, and systems
US7978721B2 (en) 2008-07-02 2011-07-12 Micron Technology Inc. Multi-serial interface stacked-die memory architecture
US8086913B2 (en) 2008-09-11 2011-12-27 Micron Technology, Inc. Methods, apparatus, and systems to repair memory
US9123552B2 (en) * 2010-03-30 2015-09-01 Micron Technology, Inc. Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same
US8362602B2 (en) * 2010-08-09 2013-01-29 Headway Technologies, Inc. Layered chip package and method of manufacturing same
US8916910B2 (en) * 2010-12-13 2014-12-23 Research Foundation Of State University Of New York Reconfigurable RF/digital hybrid 3D interconnect
KR101817156B1 (ko) * 2010-12-28 2018-01-10 삼성전자 주식회사 관통 전극을 갖는 적층 구조의 반도체 장치, 반도체 메모리 장치, 반도체 메모리 시스템 및 그 동작방법
KR101208962B1 (ko) * 2011-02-22 2012-12-06 에스케이하이닉스 주식회사 반도체 장치
US8624626B2 (en) 2011-11-14 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. 3D IC structure and method
US20130159587A1 (en) * 2011-12-15 2013-06-20 Aaron Nygren Interconnect Redundancy for Multi-Interconnect Device
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration
US9448947B2 (en) * 2012-06-01 2016-09-20 Qualcomm Incorporated Inter-chip memory interface structure
US9478502B2 (en) * 2012-07-26 2016-10-25 Micron Technology, Inc. Device identification assignment and total device number detection
US9026872B2 (en) * 2012-08-16 2015-05-05 Xilinx, Inc. Flexible sized die for use in multi-die integrated circuit
KR102058101B1 (ko) * 2012-12-20 2019-12-20 에스케이하이닉스 주식회사 반도체 집적회로
KR102190382B1 (ko) 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
US9612988B2 (en) * 2013-07-23 2017-04-04 International Business Machines Corporation Donor cores to improve integrated circuit yield
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9245825B2 (en) 2014-01-23 2016-01-26 Sandisk Technologies Inc. I/O pin capacitance reduction using TSVS
US9501603B2 (en) 2014-09-05 2016-11-22 International Business Machines Corporation Integrated circuit design changes using through-silicon vias
US10002653B2 (en) 2014-10-28 2018-06-19 Nxp Usa, Inc. Die stack address bus having a programmable width
KR102290020B1 (ko) * 2015-06-05 2021-08-19 삼성전자주식회사 스택드 칩 구조에서 소프트 데이터 페일 분석 및 구제 기능을 제공하는 반도체 메모리 장치
US9871020B1 (en) * 2016-07-14 2018-01-16 Globalfoundries Inc. Through silicon via sharing in a 3D integrated circuit
US10249590B2 (en) 2017-06-06 2019-04-02 Globalfoundries Inc. Stacked dies using one or more interposers
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US11048597B2 (en) * 2018-05-14 2021-06-29 Micron Technology, Inc. Memory die remapping
CN112102862B (zh) * 2020-09-22 2023-03-07 武汉新芯集成电路制造有限公司 芯片结构、数据读取处理方法及芯片结构制造方法
US11226767B1 (en) * 2020-09-30 2022-01-18 Micron Technology, Inc. Apparatus with access control mechanism and methods for operating the same
US11468945B2 (en) * 2020-10-15 2022-10-11 Arm Limited 3D storage architecture with tier-specific controls
US20250209027A1 (en) * 2023-12-22 2025-06-26 Intel Corporation Resilient i/o interconnect

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070024319A1 (en) * 2003-10-08 2007-02-01 Siemens Aktiengesellschaft Configurable logic circuit arangement
TW200826175A (en) * 2006-12-14 2008-06-16 United Microelectronics Corp Semiconductor wafer and method for forming the same
US20090015322A1 (en) * 2007-07-11 2009-01-15 Arm Limited Integrated circuit with multiple layers of circuits
TW200933839A (en) * 2007-09-14 2009-08-01 Texas Instruments Inc Packaged integrated circuits and methods to form a stacked integrated circuit package

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW511414B (en) 2001-04-19 2002-11-21 Via Tech Inc Data processing system and method, and control chip, and printed circuit board thereof
US20030040166A1 (en) 2001-05-25 2003-02-27 Mark Moshayedi Apparatus and method for stacking integrated circuits
JP4708176B2 (ja) * 2005-12-08 2011-06-22 エルピーダメモリ株式会社 半導体装置
US7352602B2 (en) * 2005-12-30 2008-04-01 Micron Technology, Inc. Configurable inputs and outputs for memory stacking system and method
US20070220207A1 (en) * 2006-03-14 2007-09-20 Bryan Black Transferring data from stacked memory
KR100871381B1 (ko) * 2007-06-20 2008-12-02 주식회사 하이닉스반도체 관통 실리콘 비아 칩 스택 패키지
US8136071B2 (en) 2007-09-12 2012-03-13 Neal Solomon Three dimensional integrated circuits and methods of fabrication
US7816934B2 (en) * 2007-10-16 2010-10-19 Micron Technology, Inc. Reconfigurable connections for stacked semiconductor devices
KR101176187B1 (ko) 2007-11-21 2012-08-22 삼성전자주식회사 스택형 반도체 장치 및 이 장치의 직렬 경로 형성 방법
US7791175B2 (en) * 2007-12-20 2010-09-07 Mosaid Technologies Incorporated Method for stacking serially-connected integrated circuits and multi-chip device made from same
US8384417B2 (en) * 2008-09-10 2013-02-26 Qualcomm Incorporated Systems and methods utilizing redundancy in semiconductor chip interconnects
US7796446B2 (en) * 2008-09-19 2010-09-14 Qimonda Ag Memory dies for flexible use and method for configuring memory dies
US8134852B2 (en) * 2008-10-14 2012-03-13 Mosaid Technologies Incorporated Bridge device architecture for connecting discrete memory devices to a system
US8472199B2 (en) * 2008-11-13 2013-06-25 Mosaid Technologies Incorporated System including a plurality of encapsulated semiconductor chips
US8977809B2 (en) * 2008-11-26 2015-03-10 Micron Technology, Inc. Sharing resources in multi-dice stacks

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070024319A1 (en) * 2003-10-08 2007-02-01 Siemens Aktiengesellschaft Configurable logic circuit arangement
TW200826175A (en) * 2006-12-14 2008-06-16 United Microelectronics Corp Semiconductor wafer and method for forming the same
US20090015322A1 (en) * 2007-07-11 2009-01-15 Arm Limited Integrated circuit with multiple layers of circuits
TW200933839A (en) * 2007-09-14 2009-08-01 Texas Instruments Inc Packaged integrated circuits and methods to form a stacked integrated circuit package

Also Published As

Publication number Publication date
EP2491589A1 (en) 2012-08-29
US8604593B2 (en) 2013-12-10
US20140097891A1 (en) 2014-04-10
WO2011047470A1 (en) 2011-04-28
JP2013508941A (ja) 2013-03-07
US9117685B2 (en) 2015-08-25
CN102227806A (zh) 2011-10-26
EP2491589A4 (en) 2015-07-22
TW201126682A (en) 2011-08-01
KR20120085650A (ko) 2012-08-01
US20110090004A1 (en) 2011-04-21

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