JP2013508941A - 積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成 - Google Patents
積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成 Download PDFInfo
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Abstract
Description
12 スレーブダイ
12A スレーブダイ
13 パッケージ基板
14 TSVルータ
15 TSVルータコントローラ
17 TSVルータコントローラ
18 TSV
19 TSV
21 専用接続部
22 制御接続部
31 共有バス
38 ポート
91 マルチダイ積層パッケージ
92 外部電子回路
100 破線
101 破線
102 外部コントローラ
103 接続
Claims (26)
- 集積回路ダイであって、
前記ダイに対する信号に外部アクセスを供給するための、前記ダイを通って延在する第1の複数のビアと、
前記第1の複数のビアに、複数の信号搬送構成のうちの選択された1つをとらせるように構成されている、前記ビアと結合されているルータとを
備え、
前記選択された信号搬送構成においては、少なくとも1つのビアは、前記少なくとも1つのビアが、別の前記信号搬送構成では搬送しない少なくとも1つの信号を搬送する、
ダイ。 - 少なくとも別の前記ビアは、前記別の前記信号搬送構成で、前記少なくとも1つの信号を搬送する、請求項1に記載のダイ。
- 前記選択された信号搬送構成を示す制御信号をそれに対して供給するための前記ルータと結合されているコントローラを含む、請求項1に記載のダイ。
- 前記コントローラは、前記選択された信号搬送構成を示す情報を受け取り、前記情報に応答して前記制御信号を供給するように構成されている、請求項3に記載のダイ。
- 前記コントローラは、前記第1の複数のビアの第1の群と結合されて、前記情報を前記第1の群のビアを通る前記ダイの外部のソースから受け取る、請求項4に記載のダイ。
- 前記ルータは、前記情報を前記第1の群のビアから前記コントローラにルーティングするように構成されている、請求項5に記載のダイ。
- 前記外部ソースは、第2の集積回路ダイに対する信号に外部アクセスを供給するための、それを通って延在する第2の複数のビアを有する前記第2のダイを含む、請求項5に記載のダイ。
- 前記第1の群のビアは、前記第2の複数のビアの第2の群に接続して、前記情報を受け取るようになされている、請求項7に記載のダイ。
- 前記コントローラは、前記情報を、前記選択された信号搬送構成を選択する外部コントローラから受け取るようになされている、請求項4に記載のダイ。
- 前記コントローラは、前記制御信号を保存するためのレジスタを含む、請求項3に記載のダイ。
- 前記第1の複数のビアの第1の群は、前記コントローラと結合されて、前記第2のダイを通って延在し、前記第2のダイに対する信号に外部アクセスを供給する第2の複数のビアによってとることが可能な複数の信号搬送構成のうちの選択された1つを示す情報を、前記コントローラから第2の集積回路ダイの第2のコントローラに転送する、請求項3に記載のダイ。
- 前記ルータと結合されている固有回路を含み、前記信号搬送構成のそれぞれのものにおいては、前記ルータは、それぞれの信号を前記固有回路のそれぞれの部分から前記ビアのうちの同じものにルーティングする、請求項1に記載のダイ。
- ダイを通って延在し、前記ダイに対する信号に外部アクセスを供給する複数のビアに、ルータを使用して第1の信号搬送構成をとらせるステップと、
前記複数のビアに、前記ルータを使用して第2の信号搬送構成をとらせるステップと
を含み、
前記第1の信号搬送構成においては、前記ビアのうちの少なくとも1つは、前記少なくとも1つのビアが、前記第2の信号搬送構成では搬送しない関連する少なくとも1つの信号を搬送する、
集積回路ダイ動作の方法。 - 前記第1および第2の信号搬送構成はそれぞれ、信号を前記ダイ上の固有回路のそれぞれの部分から前記ビアのうちの同じものにルーティングする、請求項13に記載の方法。
- 複数の集積回路ダイを備える積層された集積回路装置において、
それぞれのダイは、
前記ダイに対する信号に外部アクセスを供給するための、前記ダイを通って延在する複数のビアであって、前記複数のダイは、それぞれのダイの前記ビアが、隣接するダイの前記ビアに接続されるように、積み重なって配置されている、ビアと、
前記関連するビアと結合され、前記関連するビアに、前記ダイの固有回路が、前記関連するビアのうちの選択されたものによって接続されて、隣接するダイとシグナリングするシグナリング接続構成をとらせるように、および
前記関連するビアに、前記ダイの前記固有回路が接続されずに、前記隣接するダイとシグナリングするシグナリング切断構成をとらせるように構成されているルータとを含む、
積層された集積回路装置。 - 前記ダイのうちの1つと結合されているパッケージ用基板を含む、請求項15に記載の装置。
- 請求項1に記載の複数の集積回路ダイを備え、
前記複数のダイは、それぞれのダイの前記ビアが、隣接するダイの前記ビアに接続されるように積み重なって配置されている、
積層された集積回路装置。 - 前記ダイのうちの1つと結合されているパッケージ用基板を含む、請求項17に記載の装置。
- 複数の積層された集積回路ダイを動作させる方法であって、それぞれのダイは、前記ダイに対する信号に外部アクセスを供給するための、それを通って延在する複数のビアを含み、それぞれのダイの前記ビアは、隣接するダイの前記ビアに接続され、
少なくとも1つのダイの前記ビアに、前記少なくとも1つのダイの固有回路が、前記ビアのうちの選択されたものによって接続されて、隣接するダイとシグナリングするシグナリング接続構成をとらせるステップと、
前記少なくとも1つのダイの前記ビアに、前記少なくとも1つのダイの前記固有回路が接続されずに、前記隣接するダイとシグナリングするシグナリング切断構成をとらせるステップと
を含む、方法。 - 前記シグナリング接続構成は、前記残りのダイのうちの少なくともいくつかを相互接続し、そこから前記1つのダイは、前の構成で切断されていたインターフェース内に前記1つのダイの接続を含む、請求項19に記載の方法。
- 前記シグナリング切断構成は、前記インターフェースから、前記残りのダイのうちの少なくとも1つの切断を含む、請求項20に記載の方法。
- 前記シグナリング切断構成は、前記残りのダイのうちの少なくともいくつかを相互接続するインターフェースから、前記1つのダイの切断を含む、請求項19に記載の方法。
- 請求項17に記載の積層された集積回路装置と、
前記積層された集積回路装置の外部に設けられ、それと結合されて、それと通じる電子回路と
を備える、システム。 - 前記積層された集積回路装置は、データ処理機能およびデータ保存機能のうちの1つを実装し、前記電子回路は、データ処理機能およびデータ保存機能のうちの前記1つと協働することが可能である、請求項23に記載のシステム。
- 請求項15に記載の積層された集積回路装置と、
前記積層された集積回路装置の外部に設けられ、それと結合されて、それと通じる電子回路と
を備える、システム。 - 前記積層された集積回路装置は、データ処理機能およびデータ保存機能のうちの1つを実装し、前記電子回路は、データ処理機能およびデータ保存機能のうちの前記1つと協働することが可能である、請求項25に記載のシステム。
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US25286509P | 2009-10-19 | 2009-10-19 | |
US61/252,865 | 2009-10-19 | ||
US12/773,340 | 2010-05-04 | ||
US12/773,340 US8604593B2 (en) | 2009-10-19 | 2010-05-04 | Reconfiguring through silicon vias in stacked multi-die packages |
PCT/CA2010/001650 WO2011047470A1 (en) | 2009-10-19 | 2010-10-19 | Reconfiguring through silicon vias in stacked multi-die packages |
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JP2013508941A true JP2013508941A (ja) | 2013-03-07 |
JP2013508941A5 JP2013508941A5 (ja) | 2013-11-28 |
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US (2) | US8604593B2 (ja) |
EP (1) | EP2491589A4 (ja) |
JP (1) | JP2013508941A (ja) |
KR (1) | KR20120085650A (ja) |
CN (1) | CN102227806A (ja) |
TW (1) | TWI476889B (ja) |
WO (1) | WO2011047470A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012142576A (ja) * | 2010-12-28 | 2012-07-26 | Samsung Electronics Co Ltd | 貫通電極を有する積層構造の半導体装置、半導体メモリ装置、半導体メモリ・システム及びその動作方法 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9229887B2 (en) * | 2008-02-19 | 2016-01-05 | Micron Technology, Inc. | Memory device with network on chip methods, apparatus, and systems |
US7978721B2 (en) | 2008-07-02 | 2011-07-12 | Micron Technology Inc. | Multi-serial interface stacked-die memory architecture |
US8086913B2 (en) | 2008-09-11 | 2011-12-27 | Micron Technology, Inc. | Methods, apparatus, and systems to repair memory |
US9123552B2 (en) * | 2010-03-30 | 2015-09-01 | Micron Technology, Inc. | Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same |
US8362602B2 (en) * | 2010-08-09 | 2013-01-29 | Headway Technologies, Inc. | Layered chip package and method of manufacturing same |
US8916910B2 (en) * | 2010-12-13 | 2014-12-23 | Research Foundation Of State University Of New York | Reconfigurable RF/digital hybrid 3D interconnect |
KR101208962B1 (ko) * | 2011-02-22 | 2012-12-06 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US8624626B2 (en) | 2011-11-14 | 2014-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | 3D IC structure and method |
US20130159587A1 (en) * | 2011-12-15 | 2013-06-20 | Aaron Nygren | Interconnect Redundancy for Multi-Interconnect Device |
US8933715B2 (en) | 2012-04-08 | 2015-01-13 | Elm Technology Corporation | Configurable vertical integration |
US9448947B2 (en) * | 2012-06-01 | 2016-09-20 | Qualcomm Incorporated | Inter-chip memory interface structure |
US9478502B2 (en) * | 2012-07-26 | 2016-10-25 | Micron Technology, Inc. | Device identification assignment and total device number detection |
US9026872B2 (en) * | 2012-08-16 | 2015-05-05 | Xilinx, Inc. | Flexible sized die for use in multi-die integrated circuit |
KR102058101B1 (ko) * | 2012-12-20 | 2019-12-20 | 에스케이하이닉스 주식회사 | 반도체 집적회로 |
KR102190382B1 (ko) | 2012-12-20 | 2020-12-11 | 삼성전자주식회사 | 반도체 패키지 |
US9612988B2 (en) * | 2013-07-23 | 2017-04-04 | International Business Machines Corporation | Donor cores to improve integrated circuit yield |
US20150155039A1 (en) * | 2013-12-02 | 2015-06-04 | Silicon Storage Technology, Inc. | Three-Dimensional Flash NOR Memory System With Configurable Pins |
US9245825B2 (en) | 2014-01-23 | 2016-01-26 | Sandisk Technologies Inc. | I/O pin capacitance reduction using TSVS |
US9501603B2 (en) | 2014-09-05 | 2016-11-22 | International Business Machines Corporation | Integrated circuit design changes using through-silicon vias |
US10002653B2 (en) | 2014-10-28 | 2018-06-19 | Nxp Usa, Inc. | Die stack address bus having a programmable width |
KR102290020B1 (ko) * | 2015-06-05 | 2021-08-19 | 삼성전자주식회사 | 스택드 칩 구조에서 소프트 데이터 페일 분석 및 구제 기능을 제공하는 반도체 메모리 장치 |
US9871020B1 (en) * | 2016-07-14 | 2018-01-16 | Globalfoundries Inc. | Through silicon via sharing in a 3D integrated circuit |
US10249590B2 (en) | 2017-06-06 | 2019-04-02 | Globalfoundries Inc. | Stacked dies using one or more interposers |
US11048597B2 (en) * | 2018-05-14 | 2021-06-29 | Micron Technology, Inc. | Memory die remapping |
US10838831B2 (en) * | 2018-05-14 | 2020-11-17 | Micron Technology, Inc. | Die-scope proximity disturb and defect remapping scheme for non-volatile memory |
US11055167B2 (en) * | 2018-05-14 | 2021-07-06 | Micron Technology, Inc. | Channel-scope proximity disturb and defect remapping scheme for non-volatile memory |
CN112102862B (zh) * | 2020-09-22 | 2023-03-07 | 武汉新芯集成电路制造有限公司 | 芯片结构、数据读取处理方法及芯片结构制造方法 |
US11226767B1 (en) * | 2020-09-30 | 2022-01-18 | Micron Technology, Inc. | Apparatus with access control mechanism and methods for operating the same |
US11468945B2 (en) * | 2020-10-15 | 2022-10-11 | Arm Limited | 3D storage architecture with tier-specific controls |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090015322A1 (en) * | 2007-07-11 | 2009-01-15 | Arm Limited | Integrated circuit with multiple layers of circuits |
WO2009079772A1 (en) * | 2007-12-20 | 2009-07-02 | Mosaid Technologies Incorporated | Method for stacking serially-connected integrated circuits and multi-chip device made from same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW511414B (en) | 2001-04-19 | 2002-11-21 | Via Tech Inc | Data processing system and method, and control chip, and printed circuit board thereof |
US20030040166A1 (en) | 2001-05-25 | 2003-02-27 | Mark Moshayedi | Apparatus and method for stacking integrated circuits |
DE102004045527B4 (de) * | 2003-10-08 | 2009-12-03 | Siemens Ag | Konfigurierbare Logikschaltungsanordnung |
JP4708176B2 (ja) * | 2005-12-08 | 2011-06-22 | エルピーダメモリ株式会社 | 半導体装置 |
US7352602B2 (en) * | 2005-12-30 | 2008-04-01 | Micron Technology, Inc. | Configurable inputs and outputs for memory stacking system and method |
US20070220207A1 (en) * | 2006-03-14 | 2007-09-20 | Bryan Black | Transferring data from stacked memory |
TWI332239B (en) * | 2006-12-14 | 2010-10-21 | United Microelectronics Corp | Semiconductor wafer and method for forming the same |
KR100871381B1 (ko) * | 2007-06-20 | 2008-12-02 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 칩 스택 패키지 |
US8136071B2 (en) | 2007-09-12 | 2012-03-13 | Neal Solomon | Three dimensional integrated circuits and methods of fabrication |
US20090072373A1 (en) * | 2007-09-14 | 2009-03-19 | Reynaldo Corpuz Javier | Packaged integrated circuits and methods to form a stacked integrated circuit package |
US7816934B2 (en) * | 2007-10-16 | 2010-10-19 | Micron Technology, Inc. | Reconfigurable connections for stacked semiconductor devices |
KR101176187B1 (ko) | 2007-11-21 | 2012-08-22 | 삼성전자주식회사 | 스택형 반도체 장치 및 이 장치의 직렬 경로 형성 방법 |
US8384417B2 (en) * | 2008-09-10 | 2013-02-26 | Qualcomm Incorporated | Systems and methods utilizing redundancy in semiconductor chip interconnects |
US7796446B2 (en) * | 2008-09-19 | 2010-09-14 | Qimonda Ag | Memory dies for flexible use and method for configuring memory dies |
US8134852B2 (en) * | 2008-10-14 | 2012-03-13 | Mosaid Technologies Incorporated | Bridge device architecture for connecting discrete memory devices to a system |
US8472199B2 (en) * | 2008-11-13 | 2013-06-25 | Mosaid Technologies Incorporated | System including a plurality of encapsulated semiconductor chips |
US8977809B2 (en) * | 2008-11-26 | 2015-03-10 | Micron Technology, Inc. | Sharing resources in multi-dice stacks |
-
2010
- 2010-05-04 US US12/773,340 patent/US8604593B2/en active Active
- 2010-08-26 TW TW099128670A patent/TWI476889B/zh not_active IP Right Cessation
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-
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- 2013-12-10 US US14/101,507 patent/US9117685B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090015322A1 (en) * | 2007-07-11 | 2009-01-15 | Arm Limited | Integrated circuit with multiple layers of circuits |
WO2009079772A1 (en) * | 2007-12-20 | 2009-07-02 | Mosaid Technologies Incorporated | Method for stacking serially-connected integrated circuits and multi-chip device made from same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012142576A (ja) * | 2010-12-28 | 2012-07-26 | Samsung Electronics Co Ltd | 貫通電極を有する積層構造の半導体装置、半導体メモリ装置、半導体メモリ・システム及びその動作方法 |
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EP2491589A4 (en) | 2015-07-22 |
WO2011047470A1 (en) | 2011-04-28 |
US20140097891A1 (en) | 2014-04-10 |
TWI476889B (zh) | 2015-03-11 |
KR20120085650A (ko) | 2012-08-01 |
CN102227806A (zh) | 2011-10-26 |
US8604593B2 (en) | 2013-12-10 |
US9117685B2 (en) | 2015-08-25 |
TW201126682A (en) | 2011-08-01 |
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