KR20120020073A - 반도체 장치의 설계 방법 - Google Patents
반도체 장치의 설계 방법 Download PDFInfo
- Publication number
- KR20120020073A KR20120020073A KR1020110085093A KR20110085093A KR20120020073A KR 20120020073 A KR20120020073 A KR 20120020073A KR 1020110085093 A KR1020110085093 A KR 1020110085093A KR 20110085093 A KR20110085093 A KR 20110085093A KR 20120020073 A KR20120020073 A KR 20120020073A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- film
- layer
- light emitting
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 238000000034 method Methods 0.000 title claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 135
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 81
- 238000013461 design Methods 0.000 claims abstract description 68
- 239000004020 conductor Substances 0.000 claims abstract description 51
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 411
- 239000000463 material Substances 0.000 claims description 166
- 239000012044 organic layer Substances 0.000 claims description 68
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- 125000004429 atom Chemical group 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 21
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 14
- -1 deuterium ions Chemical class 0.000 abstract description 74
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 abstract description 22
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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| WO2011068032A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR102081035B1 (ko) * | 2010-02-19 | 2020-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
-
2011
- 2011-08-25 US US13/217,723 patent/US8592261B2/en not_active Expired - Fee Related
- 2011-08-25 JP JP2011183697A patent/JP5864163B2/ja not_active Expired - Fee Related
- 2011-08-25 KR KR1020110085093A patent/KR20120020073A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012069519A (ja) | 2012-04-05 |
| US20120052602A1 (en) | 2012-03-01 |
| US8592261B2 (en) | 2013-11-26 |
| JP5864163B2 (ja) | 2016-02-17 |
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