KR20110088545A - 광전 반도체 칩의 제조 방법 및 광전 반도체 칩 - Google Patents

광전 반도체 칩의 제조 방법 및 광전 반도체 칩 Download PDF

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Publication number
KR20110088545A
KR20110088545A KR1020117012745A KR20117012745A KR20110088545A KR 20110088545 A KR20110088545 A KR 20110088545A KR 1020117012745 A KR1020117012745 A KR 1020117012745A KR 20117012745 A KR20117012745 A KR 20117012745A KR 20110088545 A KR20110088545 A KR 20110088545A
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South Korea
Prior art keywords
dopant
layer
doped
codopant
functional layer
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Ceased
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KR1020117012745A
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English (en)
Korean (ko)
Inventor
빈센트 그롤리어
루츠 호펠
한스-위르겐 루가우어
마르틴 슈트라쓰부르크
안드레아스 비버스돌프
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110088545A publication Critical patent/KR20110088545A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

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  • Led Devices (AREA)
KR1020117012745A 2008-11-07 2009-10-12 광전 반도체 칩의 제조 방법 및 광전 반도체 칩 Ceased KR20110088545A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008056371.4 2008-11-07
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
KR20110088545A true KR20110088545A (ko) 2011-08-03

Family

ID=41667176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117012745A Ceased KR20110088545A (ko) 2008-11-07 2009-10-12 광전 반도체 칩의 제조 방법 및 광전 반도체 칩

Country Status (8)

Country Link
US (1) US8598596B2 (https=)
EP (1) EP2342762A1 (https=)
JP (1) JP5951993B2 (https=)
KR (1) KR20110088545A (https=)
CN (1) CN102210031B (https=)
DE (1) DE102008056371A1 (https=)
TW (1) TW201027806A (https=)
WO (1) WO2010051786A1 (https=)

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KR20190076011A (ko) * 2016-10-28 2019-07-01 루미레즈 엘엘씨 자외선 조사 하에서 발광 디바이스들을 성장시키기 위한 방법들

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US9431585B2 (en) 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
CN103184034B (zh) * 2013-01-04 2014-08-20 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂
JP6051901B2 (ja) * 2013-02-05 2016-12-27 豊田合成株式会社 ｐ型ＩＩＩ 族窒化物半導体の製造方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
KR102227981B1 (ko) * 2013-06-20 2021-03-16 삼성전자주식회사 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
EP3459117B1 (en) 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
WO2019152611A1 (en) * 2018-02-02 2019-08-08 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

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US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
TW329058B (en) 1997-03-20 1998-04-01 Ind Tech Res Inst Manufacturing method for P type gallium nitride
JPH11126758A (ja) 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP2001044209A (ja) 1999-07-27 2001-02-16 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置の製造方法
KR20020056566A (ko) * 2000-12-29 2002-07-10 조장연 질화 갈륨계 반도체 박막의 피형 활성화 방법
JP2002319703A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
DE10152922B4 (de) * 2001-10-26 2010-05-12 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
TW517403B (en) * 2002-01-10 2003-01-11 Epitech Technology Corp Nitride light emitting diode and manufacturing method for the same
TW540170B (en) * 2002-07-08 2003-07-01 Arima Optoelectronics Corp Ohmic contact structure of semiconductor light emitting device and its manufacturing method
JP2004128189A (ja) * 2002-10-02 2004-04-22 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体の製造方法
KR100580752B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100662191B1 (ko) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP5360789B2 (ja) 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 ｐ型酸化亜鉛薄膜及びその作製方法
KR100748709B1 (ko) * 2006-09-18 2007-08-13 서울옵토디바이스주식회사 발광 소자 및 그 제조 방법
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190076011A (ko) * 2016-10-28 2019-07-01 루미레즈 엘엘씨 자외선 조사 하에서 발광 디바이스들을 성장시키기 위한 방법들
JP2020501345A (ja) * 2016-10-28 2020-01-16 ルミレッズ リミテッド ライアビリティ カンパニー 紫外線照射下で発光デバイスを成長させる方法

Also Published As

Publication number Publication date
CN102210031B (zh) 2015-07-01
JP2012508458A (ja) 2012-04-05
JP5951993B2 (ja) 2016-07-13
WO2010051786A1 (de) 2010-05-14
US20110278641A1 (en) 2011-11-17
DE102008056371A1 (de) 2010-05-12
TW201027806A (en) 2010-07-16
EP2342762A1 (de) 2011-07-13
US8598596B2 (en) 2013-12-03
CN102210031A (zh) 2011-10-05

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