DE102008056371A1 - Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip - Google Patents

Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Download PDF

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Publication number
DE102008056371A1
DE102008056371A1 DE102008056371A DE102008056371A DE102008056371A1 DE 102008056371 A1 DE102008056371 A1 DE 102008056371A1 DE 102008056371 A DE102008056371 A DE 102008056371A DE 102008056371 A DE102008056371 A DE 102008056371A DE 102008056371 A1 DE102008056371 A1 DE 102008056371A1
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DE
Germany
Prior art keywords
dopant
codopant
doped
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102008056371A
Other languages
German (de)
English (en)
Inventor
Andreas Dr. Biebersdorf
Lutz Dr. Höppel
Vincent Dr. Grolier
Hans-Jürgen Dr. Lugauer
Martin Dr. Straßburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008056371A priority Critical patent/DE102008056371A1/de
Priority to CN200980144749.0A priority patent/CN102210031B/zh
Priority to JP2011535002A priority patent/JP5951993B2/ja
Priority to KR1020117012745A priority patent/KR20110088545A/ko
Priority to EP09765005A priority patent/EP2342762A1/de
Priority to US13/128,050 priority patent/US8598596B2/en
Priority to PCT/DE2009/001415 priority patent/WO2010051786A1/de
Priority to TW098137382A priority patent/TW201027806A/zh
Publication of DE102008056371A1 publication Critical patent/DE102008056371A1/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Landscapes

  • Led Devices (AREA)
DE102008056371A 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Ceased DE102008056371A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN200980144749.0A CN102210031B (zh) 2008-11-07 2009-10-12 用于制造光电子半导体芯片的方法和光电子半导体芯片
JP2011535002A JP5951993B2 (ja) 2008-11-07 2009-10-12 オプトエレクトロニクス半導体チップを製造する方法
KR1020117012745A KR20110088545A (ko) 2008-11-07 2009-10-12 광전 반도체 칩의 제조 방법 및 광전 반도체 칩
EP09765005A EP2342762A1 (de) 2008-11-07 2009-10-12 Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
US13/128,050 US8598596B2 (en) 2008-11-07 2009-10-12 Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
PCT/DE2009/001415 WO2010051786A1 (de) 2008-11-07 2009-10-12 Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
TW098137382A TW201027806A (en) 2008-11-07 2009-11-04 Method for the producing of an optoelectronic semiconductor chip and optoelectronic semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
DE102008056371A1 true DE102008056371A1 (de) 2010-05-12

Family

ID=41667176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008056371A Ceased DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Country Status (8)

Country Link
US (1) US8598596B2 (https=)
EP (1) EP2342762A1 (https=)
JP (1) JP5951993B2 (https=)
KR (1) KR20110088545A (https=)
CN (1) CN102210031B (https=)
DE (1) DE102008056371A1 (https=)
TW (1) TW201027806A (https=)
WO (1) WO2010051786A1 (https=)

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US9431585B2 (en) 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
CN103184034B (zh) * 2013-01-04 2014-08-20 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂
JP6051901B2 (ja) * 2013-02-05 2016-12-27 豊田合成株式会社 ｐ型ＩＩＩ 族窒化物半導体の製造方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
KR102227981B1 (ko) * 2013-06-20 2021-03-16 삼성전자주식회사 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
EP3459117B1 (en) 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
CN110168752B (zh) * 2016-10-28 2022-02-22 亮锐有限责任公司 用于在紫外照射下生长发光器件的方法
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
WO2019152611A1 (en) * 2018-02-02 2019-08-08 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152922A1 (de) * 2001-10-26 2003-05-15 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112007001605T5 (de) * 2006-07-06 2009-06-18 National Institute Of Advanced Industrial Science And Technology Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben

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US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
TW329058B (en) 1997-03-20 1998-04-01 Ind Tech Res Inst Manufacturing method for P type gallium nitride
JPH11126758A (ja) 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP2001044209A (ja) 1999-07-27 2001-02-16 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置の製造方法
KR20020056566A (ko) * 2000-12-29 2002-07-10 조장연 질화 갈륨계 반도체 박막의 피형 활성화 방법
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152922A1 (de) * 2001-10-26 2003-05-15 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
DE112007001605T5 (de) * 2006-07-06 2009-06-18 National Institute Of Advanced Industrial Science And Technology Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

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Title
et al., APL 95, 1884 (2004)
I. Schnitzer et al., Appl. Phys. Lett. 63 (16), 18. Oktober 1993, 2174-2176
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Also Published As

Publication number Publication date
CN102210031B (zh) 2015-07-01
JP2012508458A (ja) 2012-04-05
JP5951993B2 (ja) 2016-07-13
WO2010051786A1 (de) 2010-05-14
US20110278641A1 (en) 2011-11-17
TW201027806A (en) 2010-07-16
EP2342762A1 (de) 2011-07-13
KR20110088545A (ko) 2011-08-03
US8598596B2 (en) 2013-12-03
CN102210031A (zh) 2011-10-05

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