KR20110081958A - 출력 지연 조정을 가진 직렬 연결 메모리 시스템 - Google Patents

출력 지연 조정을 가진 직렬 연결 메모리 시스템 Download PDF

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Publication number
KR20110081958A
KR20110081958A KR1020117006956A KR20117006956A KR20110081958A KR 20110081958 A KR20110081958 A KR 20110081958A KR 1020117006956 A KR1020117006956 A KR 1020117006956A KR 20117006956 A KR20117006956 A KR 20117006956A KR 20110081958 A KR20110081958 A KR 20110081958A
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KR
South Korea
Prior art keywords
command
clock signal
output
input
signal
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KR1020117006956A
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English (en)
Korean (ko)
Inventor
학준 오
Original Assignee
모사이드 테크놀로지스 인코퍼레이티드
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Priority claimed from US12/241,832 external-priority patent/US8181056B2/en
Priority claimed from US12/241,960 external-priority patent/US8161313B2/en
Application filed by 모사이드 테크놀로지스 인코퍼레이티드 filed Critical 모사이드 테크놀로지스 인코퍼레이티드
Publication of KR20110081958A publication Critical patent/KR20110081958A/ko

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/32Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066Output synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069I/O lines read out arrangements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device

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  • Dram (AREA)
  • Memory System (AREA)
  • Pulse Circuits (AREA)
  • Static Random-Access Memory (AREA)
KR1020117006956A 2008-09-30 2009-09-17 출력 지연 조정을 가진 직렬 연결 메모리 시스템 KR20110081958A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/241,832 US8181056B2 (en) 2008-09-30 2008-09-30 Serial-connected memory system with output delay adjustment
US12/241,960 US8161313B2 (en) 2008-09-30 2008-09-30 Serial-connected memory system with duty cycle correction
US12/241,960 2008-09-30
US12/241,832 2008-09-30

Publications (1)

Publication Number Publication Date
KR20110081958A true KR20110081958A (ko) 2011-07-15

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ID=42072981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117006956A KR20110081958A (ko) 2008-09-30 2009-09-17 출력 지연 조정을 가진 직렬 연결 메모리 시스템

Country Status (6)

Country Link
EP (1) EP2329496A4 (zh)
JP (2) JP2012504263A (zh)
KR (1) KR20110081958A (zh)
CN (1) CN102165529B (zh)
TW (1) TW201027556A (zh)
WO (1) WO2010037205A1 (zh)

Cited By (1)

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US11061577B2 (en) 2018-10-30 2021-07-13 Samsung Electronics Co., Ltd. System on chip performing training of duty cycle of write clock using mode register write command, operating method of system on chip, electronic device including system on chip

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JP6232313B2 (ja) * 2014-02-25 2017-11-15 新日本無線株式会社 同期式シリアル通信方法およびスレーブ装置
KR20180033368A (ko) * 2016-09-23 2018-04-03 삼성전자주식회사 케스-케이드 연결 구조로 레퍼런스 클록을 전달하는 스토리지 장치들을 포함하는 전자 장치
KR20190009534A (ko) * 2017-07-19 2019-01-29 에스케이하이닉스 주식회사 반도체장치
KR101999125B1 (ko) * 2017-11-24 2019-07-11 파밀넷 주식회사 Rs-422와 rs-485 시리얼 통신을 위한 출력신호 자동 제어기
JP2020155841A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体集積回路及び送信装置
US10937468B2 (en) * 2019-07-03 2021-03-02 Micron Technology, Inc. Memory with configurable die powerup delay
CN112332881B (zh) * 2020-10-19 2022-04-26 深圳市信锐网科技术有限公司 使能电路及通信装置
CN112698683A (zh) * 2020-12-28 2021-04-23 深圳市合信自动化技术有限公司 一种可配置总线解决传输延时数据出错的方法、装置及plc

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US7352219B2 (en) * 2005-08-30 2008-04-01 Infineon Technologies Ag Duty cycle corrector
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11061577B2 (en) 2018-10-30 2021-07-13 Samsung Electronics Co., Ltd. System on chip performing training of duty cycle of write clock using mode register write command, operating method of system on chip, electronic device including system on chip

Also Published As

Publication number Publication date
WO2010037205A1 (en) 2010-04-08
CN102165529B (zh) 2014-12-31
TW201027556A (en) 2010-07-16
JP2013008386A (ja) 2013-01-10
EP2329496A1 (en) 2011-06-08
EP2329496A4 (en) 2012-06-13
JP2012504263A (ja) 2012-02-16
JP5599852B2 (ja) 2014-10-01
CN102165529A (zh) 2011-08-24

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