KR20110003382A - 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 - Google Patents

반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 Download PDF

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Publication number
KR20110003382A
KR20110003382A KR1020107026563A KR20107026563A KR20110003382A KR 20110003382 A KR20110003382 A KR 20110003382A KR 1020107026563 A KR1020107026563 A KR 1020107026563A KR 20107026563 A KR20107026563 A KR 20107026563A KR 20110003382 A KR20110003382 A KR 20110003382A
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KR
South Korea
Prior art keywords
composition
thick film
additive
firing
glass
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Ceased
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KR1020107026563A
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English (en)
Korean (ko)
Inventor
유엘리 왕
캐롤 알란 프레데릭
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
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Publication of KR20110003382A publication Critical patent/KR20110003382A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107026563A 2008-04-28 2009-04-22 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 Ceased KR20110003382A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4838508P 2008-04-28 2008-04-28
US61/048,385 2008-04-28

Publications (1)

Publication Number Publication Date
KR20110003382A true KR20110003382A (ko) 2011-01-11

Family

ID=40909874

Family Applications (1)

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KR1020107026563A Ceased KR20110003382A (ko) 2008-04-28 2009-04-22 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법

Country Status (7)

Country Link
US (1) US20090266409A1 (enExample)
EP (1) EP2274748A1 (enExample)
JP (1) JP2011523492A (enExample)
KR (1) KR20110003382A (enExample)
CN (1) CN102017011A (enExample)
TW (1) TW201005755A (enExample)
WO (1) WO2009134646A1 (enExample)

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US8465794B2 (en) * 2009-03-19 2013-06-18 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
JP5137923B2 (ja) 2009-09-18 2013-02-06 株式会社ノリタケカンパニーリミテド 太陽電池用電極ペースト組成物
TW201114876A (en) * 2009-10-29 2011-05-01 Giga Solar Materials Corp Conductive paste with surfactants
US20110180139A1 (en) * 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20110180138A1 (en) * 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US9390829B2 (en) 2010-01-25 2016-07-12 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP5362615B2 (ja) * 2010-02-22 2013-12-11 Ｄｏｗａエレクトロニクス株式会社 銀粉及びその製造方法
JP5351100B2 (ja) * 2010-07-02 2013-11-27 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物
CN102314956A (zh) * 2010-07-09 2012-01-11 硕禾电子材料股份有限公司 导电铝胶及其制造方法、太阳能电池及其模块
WO2012058358A1 (en) * 2010-10-28 2012-05-03 Ferro Corporation Solar cell metallizations containing metal additive
US20120111399A1 (en) * 2010-11-08 2012-05-10 E. I. Du Pont De Nemours And Company Solar cell electrode
WO2012064323A1 (en) * 2010-11-09 2012-05-18 E. I. Du Pont De Nemours And Company Thick-film paste compositions with phosphonium surfactant
US9640298B2 (en) * 2010-11-18 2017-05-02 Lg Chem, Ltd. Silver paste composition for forming an electrode, and silicon solar cell using same
JP5527901B2 (ja) * 2011-01-19 2014-06-25 横浜ゴム株式会社 太陽電池集電電極形成用導電性組成物および太陽電池セル
CN102157220B (zh) * 2011-02-28 2013-09-18 张振中 晶体硅太阳能电池正面栅线电极专用Ag浆
US20120234384A1 (en) * 2011-03-15 2012-09-20 E.I. Du Pont Nemours And Company Conductive metal paste for a metal-wrap-through silicon solar cell
US20120234383A1 (en) * 2011-03-15 2012-09-20 E.I.Du Pont De Nemours And Company Conductive metal paste for a metal-wrap-through silicon solar cell
JP2012212615A (ja) * 2011-03-31 2012-11-01 Sony Corp 光電変換素子の製造方法、光電変換素子および電子機器
US9224517B2 (en) 2011-04-07 2015-12-29 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20120260982A1 (en) * 2011-04-14 2012-10-18 Hitachi Chemical Company, Ltd. Paste composition for electrode, photovoltaic cell element, and photovoltaic cell
JP5725180B2 (ja) * 2011-07-25 2015-05-27 日立化成株式会社 素子および太陽電池
KR20150125956A (ko) * 2011-11-14 2015-11-10 히타치가세이가부시끼가이샤 전극용 페이스트 조성물, 태양 전지 소자 및 태양 전지
CN103177789B (zh) * 2011-12-20 2016-11-02 比亚迪股份有限公司 一种晶体硅太阳电池导电浆料及其制备方法
CN103177793B (zh) * 2011-12-26 2015-12-02 浙江昱辉阳光能源有限公司 太阳能电池正面电极用导电浆料及其制备方法
CN102568699A (zh) * 2012-01-04 2012-07-11 无锡卡利克斯科技有限公司 分离机管路预加热设备
US20130183795A1 (en) * 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
CN102898028B (zh) * 2012-09-27 2015-07-15 广州市儒兴科技开发有限公司 一种晶体硅太阳电池正面银浆用玻璃粉及其制备方法
EP2749545B1 (en) * 2012-12-28 2018-10-03 Heraeus Deutschland GmbH & Co. KG Binary glass frits used in N-Type solar cell production
KR20140092488A (ko) * 2012-12-29 2014-07-24 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
CN103077764B (zh) * 2013-02-01 2016-05-11 李春生 一种太阳能电池正面电极用导电浆料
US9236506B2 (en) 2013-02-05 2016-01-12 E I Du Pont De Nemours And Company Conductive silver paste for a metal-wrap-through silicon solar cell
JP6242198B2 (ja) 2013-12-10 2017-12-06 京都エレックス株式会社 半導体デバイスの導電膜形成用導電性ペースト、および半導体デバイス、並びに半導体デバイスの製造方法
EP2913139B1 (en) 2014-02-26 2019-04-03 Heraeus Precious Metals North America Conshohocken LLC A glass comprising molybdenum and lead in a solar cell paste
US20170271535A1 (en) * 2014-05-19 2017-09-21 Sun Chemical Corporation A silver paste containing bismuth oxide and its use in solar cells
US9349883B2 (en) * 2014-06-19 2016-05-24 E I Du Pont De Nemours And Company Conductor for a solar cell
JP5957546B2 (ja) * 2015-01-07 2016-07-27 株式会社ノリタケカンパニーリミテド 導電性組成物
US10636540B2 (en) 2015-03-27 2020-04-28 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising an oxide additive
US10056508B2 (en) 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
US10784383B2 (en) * 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9859494B1 (en) 2016-06-29 2018-01-02 International Business Machines Corporation Nanoparticle with plural functionalities, and method of forming the nanoparticle
CN107274962A (zh) * 2017-05-18 2017-10-20 江苏东昇光伏科技有限公司 一种太阳能电池用浆料及其制备方法
KR102243472B1 (ko) * 2018-12-17 2021-04-26 주식회사 경동원 전력반도체 접합용 소결 페이스트 조성물
CN120903835B (zh) * 2025-07-16 2026-04-17 江苏日御光伏新材料股份有限公司 一种topcon电池leco正面银浆用玻璃粉及其制备方法

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Also Published As

Publication number Publication date
WO2009134646A1 (en) 2009-11-05
JP2011523492A (ja) 2011-08-11
TW201005755A (en) 2010-02-01
CN102017011A (zh) 2011-04-13
EP2274748A1 (en) 2011-01-19
US20090266409A1 (en) 2009-10-29

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