KR20100137356A - 바이폴라 트랜지스터 구조 및 에미터-베이스 인터페이스 불순물 포함 방법 - Google Patents

바이폴라 트랜지스터 구조 및 에미터-베이스 인터페이스 불순물 포함 방법 Download PDF

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Publication number
KR20100137356A
KR20100137356A KR1020100047579A KR20100047579A KR20100137356A KR 20100137356 A KR20100137356 A KR 20100137356A KR 1020100047579 A KR1020100047579 A KR 1020100047579A KR 20100047579 A KR20100047579 A KR 20100047579A KR 20100137356 A KR20100137356 A KR 20100137356A
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South Korea
Prior art keywords
bipolar transistor
impurity
transistor structure
emitter
base
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KR1020100047579A
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English (en)
Korean (ko)
Inventor
안토니 케이. 스탬퍼
에릭 마티아스 달스트룀
존 조셉 베누아
피터 브라이언 그레이
마크 데이비드 뒤피
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20100137356A publication Critical patent/KR20100137356A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors

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  • Bipolar Transistors (AREA)
KR1020100047579A 2009-06-22 2010-05-20 바이폴라 트랜지스터 구조 및 에미터-베이스 인터페이스 불순물 포함 방법 Withdrawn KR20100137356A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/488,899 2009-06-22
US12/488,899 US8482101B2 (en) 2009-06-22 2009-06-22 Bipolar transistor structure and method including emitter-base interface impurity

Publications (1)

Publication Number Publication Date
KR20100137356A true KR20100137356A (ko) 2010-12-30

Family

ID=43353532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100047579A Withdrawn KR20100137356A (ko) 2009-06-22 2010-05-20 바이폴라 트랜지스터 구조 및 에미터-베이스 인터페이스 불순물 포함 방법

Country Status (4)

Country Link
US (1) US8482101B2 (enExample)
JP (1) JP5704844B2 (enExample)
KR (1) KR20100137356A (enExample)
CN (1) CN101930998A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761701B2 (en) 2014-05-01 2017-09-12 Infineon Technologies Ag Bipolar transistor
US10916642B2 (en) 2019-04-18 2021-02-09 Globalfoundries U.S. Inc. Heterojunction bipolar transistor with emitter base junction oxide interface
US11862717B2 (en) 2021-08-24 2024-01-02 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with superlattice layer and method to form same
US20230352570A1 (en) * 2022-04-29 2023-11-02 Globalfoundries U.S. Inc. Bipolar junction transistor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815303B2 (en) 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
GB9907184D0 (en) * 1999-03-30 1999-05-26 Philips Electronics Nv A method of manufacturing a semiconductor device
FR2805923B1 (fr) * 2000-03-06 2002-05-24 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne
JP3528756B2 (ja) 2000-05-12 2004-05-24 松下電器産業株式会社 半導体装置
US6541346B2 (en) 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
US20050250289A1 (en) 2002-10-30 2005-11-10 Babcock Jeffrey A Control of dopant diffusion from buried layers in bipolar integrated circuits
US6794237B2 (en) * 2001-12-27 2004-09-21 Texas Instruments Incorporated Lateral heterojunction bipolar transistor
US6670654B2 (en) 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
JP2004228605A (ja) * 2004-05-14 2004-08-12 Matsushita Electric Ind Co Ltd エッチング方法
JP2006324294A (ja) * 2005-05-17 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7601629B2 (en) * 2005-12-20 2009-10-13 Texas Instruments Incorporated Semiconductive device fabricated using subliming materials to form interlevel dielectrics
US7812339B2 (en) * 2007-04-23 2010-10-12 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures

Also Published As

Publication number Publication date
CN101930998A (zh) 2010-12-29
US20100320571A1 (en) 2010-12-23
JP5704844B2 (ja) 2015-04-22
US8482101B2 (en) 2013-07-09
JP2011003907A (ja) 2011-01-06

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20100520

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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid