JP2011003907A - バイポーラ・トランジスタ構造およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011737 fluorine Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 44
- 238000002955 isolation Methods 0.000 claims description 38
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 9
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- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
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- 239000003989 dielectric material Substances 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- 238000005516 engineering process Methods 0.000 description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
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- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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Abstract
【解決手段】バイポーラ・トランジスタは、(1)半導体基板内に少なくとも部分的に位置決めされたコレクタ領域15と、(2)コレクタ領域に接触するベース領域16と、(3)ベース領域に接触するエミッタ領域16Aとを含む。エミッタ領域とベース領域の界面は、酸素不純物と、フッ素不純物および炭素不純物から成るグループから選ばれた少なくとも1つの不純物とを含む損傷領域16Aをエミツタ開口のベースを含む層16に形成することにより、バイポーラ・トランジスタの性能を改善する。それらの不純物は、ベース領域を構成するベース材料のプラズマ・エッチング処理または代わりに無水アンモニアおよびフッ化水素処理が後に続く熱処理によって界面に導入することができる。
【選択図】図3
Description
12 エピタキシャル・サブコレクタ層
14 分離領域
15 コレクタ領域
15’ 選択的コレクタ打込み物
16 ベース層
16’ ベース層
16A 損傷領域
18 誘電体キャップ層
18’ 誘電体キャップ層
18” 残存誘電体キャップ層
20 エミッタ分離層
22 スペーサ
24 エミッタ層
24’ エミッタ層
26 熱酸化物層
28 パシベーション層
30 ビア
EA エミッタ開口
EA’ エミッタ開口
Claims (20)
- コレクタ領域を含む半導体基板と、
前記コレクタ領域に接触するベース領域と、
前記ベース領域に接触するエミッタ領域と、を備えるバイポーラ・トランジスタであって、
前記エミッタ領域と前記ベース領域の間の界面が、
酸素不純物、および、
フッ素不純物および炭素不純物から成るグループから選ばれた少なくとも1つの他の不純物を含む、
バイポーラ・トランジスタ。 - 前記酸素不純物および前記他の不純物が、前記エミッタ領域と前記ベース領域の界面に限局されている、請求項1に記載のバイポーラ・トランジスタ。
- 前記酸素不純物が、1平方センチメートル当たり2×1014から10×1014の不純物原子濃度で存在し、さらに、
前記他の不純物が、1平方センチメートル当たり2×1012から1×1014の不純物原子濃度で存在するフッ素不純物である、請求項1に記載のバイポーラ・トランジスタ。 - 前記バイポーラ・トランジスタが、NPNバイポーラ・トランジスタ構造を備える、請求項1に記載のバイポーラ・トランジスタ。
- 前記バイポーラ・トランジスタが、PNPバイポーラ・トランジスタ構造を備える、請求項1に記載のバイポーラ・トランジスタ。
- 前記界面が、前記酸素不純物および前記フッ素不純物を含む、請求項1に記載のバイポーラ・トランジスタ。
- 前記界面が、前記酸素不純物および前記炭素不純物を含む、請求項1に記載のバイポーラ・トランジスタ。
- 前記界面が、前記酸素不純物、前記フッ素不純物および前記炭素不純物を含む、請求項1に記載のバイポーラ・トランジスタ。
- 前記ベース領域が、少なくとも部分的に単結晶ベース材料を含み、
前記エミッタ領域が、多結晶エミッタ材料を含む、
請求項1に記載のバイポーラ・トランジスタ。 - 前記エミッタ領域が、スペーサを含むエミッタ分離層によって前記ベース領域から部分的に隔てられている、請求項1に記載のバイポーラ・トランジスタ。
- 半導体基板内に少なくとも部分的にコレクタ領域を形成するステップと、
前記コレクタ領域に接触するベース領域を形成するステップと、
前記ベース領域に接触するエミッタ領域を形成するステップと、を含むバイポーラ・トランジスタを製造する方法であって、
前記エミッタ領域と前記ベース領域の間の界面が、
酸素不純物、および、
フッ素不純物および炭素不純物から成るグループから選ばれた少なくとも1つの不純物を含む、
バイポーラ・トランジスタを製造する方法。 - 前記酸素不純物および前記他の不純物が、前記エミッタ領域か前記ベース領域かのどちらかの中に均一に分布していない、請求項11に記載の方法。
- 前記界面が、
1平方センチメートル当たり2×1014から10×1014の不純物原子濃度の前記酸素不純物、および、
1平方センチメートル当たり2×1012から1×1014のフッ素原子濃度の前記フッ素不純物を含む、請求項11に記載の方法。 - 前記ベース領域を形成する前記ステップが、単結晶ベース材料を少なくとも部分的に生成する、請求項11に記載の方法。
- 前記単結晶ベース材料が、前記酸素不純物および前記少なくとも1つの他の不純物を生成するようにエッチング・プラズマで処理される、請求項14に記載の方法。
- 前記単結晶ベース材料が、熱的に酸化され、次に、前記酸素不純物および前記少なくとも1つの他の不純物を生成するように無水アンモニア蒸気および無水フッ化水素蒸気エッチング剤で処理される、請求項14に記載の方法。
- 前記界面が、前記酸素不純物および前記フッ素不純物を含む、請求項11に記載の方法。
- 前記界面が、前記酸素不純物および前記炭素不純物を含む、請求項11に記載の方法。
- 前記界面が、前記酸素不純物、前記フッ素不純物および前記炭素不純物を含む、請求項11に記載の方法。
- 前記ベース領域の上に前記エミッタ領域を形成するより前に前記ベース領域の上にエミッタ分離層を形成するステップをさらに含み、前記エミッタ分離層が、前記ベース領域の一部を露出するエミッタ開口を含む、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/488,899 US8482101B2 (en) | 2009-06-22 | 2009-06-22 | Bipolar transistor structure and method including emitter-base interface impurity |
US12/488899 | 2009-06-22 |
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JP2011003907A true JP2011003907A (ja) | 2011-01-06 |
JP2011003907A5 JP2011003907A5 (ja) | 2014-07-31 |
JP5704844B2 JP5704844B2 (ja) | 2015-04-22 |
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US9761701B2 (en) | 2014-05-01 | 2017-09-12 | Infineon Technologies Ag | Bipolar transistor |
US10916642B2 (en) | 2019-04-18 | 2021-02-09 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistor with emitter base junction oxide interface |
US11862717B2 (en) | 2021-08-24 | 2024-01-02 | Globalfoundries U.S. Inc. | Lateral bipolar transistor structure with superlattice layer and method to form same |
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JP2004228605A (ja) * | 2004-05-14 | 2004-08-12 | Matsushita Electric Ind Co Ltd | エッチング方法 |
JP2006324294A (ja) * | 2005-05-17 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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US6815303B2 (en) | 1998-04-29 | 2004-11-09 | Micron Technology, Inc. | Bipolar transistors with low-resistance emitter contacts |
GB9907184D0 (en) * | 1999-03-30 | 1999-05-26 | Philips Electronics Nv | A method of manufacturing a semiconductor device |
FR2805923B1 (fr) * | 2000-03-06 | 2002-05-24 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne |
JP3528756B2 (ja) | 2000-05-12 | 2004-05-24 | 松下電器産業株式会社 | 半導体装置 |
US6541346B2 (en) | 2001-03-20 | 2003-04-01 | Roger J. Malik | Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process |
US20050250289A1 (en) | 2002-10-30 | 2005-11-10 | Babcock Jeffrey A | Control of dopant diffusion from buried layers in bipolar integrated circuits |
US6794237B2 (en) * | 2001-12-27 | 2004-09-21 | Texas Instruments Incorporated | Lateral heterojunction bipolar transistor |
US6670654B2 (en) | 2002-01-09 | 2003-12-30 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor with carbon incorporation |
US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
US7300849B2 (en) * | 2005-11-04 | 2007-11-27 | Atmel Corporation | Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement |
US7651919B2 (en) * | 2005-11-04 | 2010-01-26 | Atmel Corporation | Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization |
US7601629B2 (en) * | 2005-12-20 | 2009-10-13 | Texas Instruments Incorporated | Semiconductive device fabricated using subliming materials to form interlevel dielectrics |
US7812339B2 (en) * | 2007-04-23 | 2010-10-12 | Mears Technologies, Inc. | Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures |
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JP2004228605A (ja) * | 2004-05-14 | 2004-08-12 | Matsushita Electric Ind Co Ltd | エッチング方法 |
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KR20100137356A (ko) | 2010-12-30 |
US8482101B2 (en) | 2013-07-09 |
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