CN101930998A - 包括发射极-基极界面杂质的双极晶体管结构及其方法 - Google Patents

包括发射极-基极界面杂质的双极晶体管结构及其方法 Download PDF

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Publication number
CN101930998A
CN101930998A CN201010206375.5A CN201010206375A CN101930998A CN 101930998 A CN101930998 A CN 101930998A CN 201010206375 A CN201010206375 A CN 201010206375A CN 101930998 A CN101930998 A CN 101930998A
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CN
China
Prior art keywords
impurity
bipolar transistor
emitter
base
oxygen
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Pending
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CN201010206375.5A
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English (en)
Chinese (zh)
Inventor
J·J·贝诺伊特
M·E·达尔斯罗姆
M·D·杜普伊斯
P·B·格雷
A·K·斯塔珀
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101930998A publication Critical patent/CN101930998A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors

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  • Bipolar Transistors (AREA)
CN201010206375.5A 2009-06-22 2010-06-17 包括发射极-基极界面杂质的双极晶体管结构及其方法 Pending CN101930998A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/488,899 2009-06-22
US12/488,899 US8482101B2 (en) 2009-06-22 2009-06-22 Bipolar transistor structure and method including emitter-base interface impurity

Publications (1)

Publication Number Publication Date
CN101930998A true CN101930998A (zh) 2010-12-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010206375.5A Pending CN101930998A (zh) 2009-06-22 2010-06-17 包括发射极-基极界面杂质的双极晶体管结构及其方法

Country Status (4)

Country Link
US (1) US8482101B2 (enExample)
JP (1) JP5704844B2 (enExample)
KR (1) KR20100137356A (enExample)
CN (1) CN101930998A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761701B2 (en) 2014-05-01 2017-09-12 Infineon Technologies Ag Bipolar transistor
US10916642B2 (en) 2019-04-18 2021-02-09 Globalfoundries U.S. Inc. Heterojunction bipolar transistor with emitter base junction oxide interface
US11862717B2 (en) 2021-08-24 2024-01-02 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with superlattice layer and method to form same
US20230352570A1 (en) * 2022-04-29 2023-11-02 Globalfoundries U.S. Inc. Bipolar junction transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436782B2 (en) * 2000-03-06 2002-08-20 Stmicroelectronics S.A. Process for fabricating a self-aligned double-polysilicon bipolar transistor
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US20070105330A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815303B2 (en) 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
GB9907184D0 (en) * 1999-03-30 1999-05-26 Philips Electronics Nv A method of manufacturing a semiconductor device
JP3528756B2 (ja) 2000-05-12 2004-05-24 松下電器産業株式会社 半導体装置
US6541346B2 (en) 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
US20050250289A1 (en) 2002-10-30 2005-11-10 Babcock Jeffrey A Control of dopant diffusion from buried layers in bipolar integrated circuits
US6794237B2 (en) * 2001-12-27 2004-09-21 Texas Instruments Incorporated Lateral heterojunction bipolar transistor
US6670654B2 (en) 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP2004228605A (ja) * 2004-05-14 2004-08-12 Matsushita Electric Ind Co Ltd エッチング方法
JP2006324294A (ja) * 2005-05-17 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7601629B2 (en) * 2005-12-20 2009-10-13 Texas Instruments Incorporated Semiconductive device fabricated using subliming materials to form interlevel dielectrics
US7812339B2 (en) * 2007-04-23 2010-10-12 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436782B2 (en) * 2000-03-06 2002-08-20 Stmicroelectronics S.A. Process for fabricating a self-aligned double-polysilicon bipolar transistor
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US20070105330A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization

Also Published As

Publication number Publication date
US20100320571A1 (en) 2010-12-23
JP5704844B2 (ja) 2015-04-22
US8482101B2 (en) 2013-07-09
KR20100137356A (ko) 2010-12-30
JP2011003907A (ja) 2011-01-06

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Application publication date: 20101229