KR20100133446A - 액침 시스템, 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

액침 시스템, 노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR20100133446A
KR20100133446A KR1020107023702A KR20107023702A KR20100133446A KR 20100133446 A KR20100133446 A KR 20100133446A KR 1020107023702 A KR1020107023702 A KR 1020107023702A KR 20107023702 A KR20107023702 A KR 20107023702A KR 20100133446 A KR20100133446 A KR 20100133446A
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KR
South Korea
Prior art keywords
liquid
substrate
liquid recovery
distance
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107023702A
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English (en)
Korean (ko)
Inventor
야스후미 니시이
Original Assignee
가부시키가이샤 니콘
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Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20100133446A publication Critical patent/KR20100133446A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020107023702A 2008-03-27 2009-03-26 액침 시스템, 노광 장치, 노광 방법 및 디바이스 제조 방법 Withdrawn KR20100133446A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US6481008P 2008-03-27 2008-03-27
US61/064,810 2008-03-27
US12/382,742 US8233139B2 (en) 2008-03-27 2009-03-23 Immersion system, exposure apparatus, exposing method, and device fabricating method
US12/382,742 2009-03-23

Publications (1)

Publication Number Publication Date
KR20100133446A true KR20100133446A (ko) 2010-12-21

Family

ID=40793250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107023702A Withdrawn KR20100133446A (ko) 2008-03-27 2009-03-26 액침 시스템, 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (5)

Country Link
US (2) US8233139B2 (https=)
JP (1) JP2009239286A (https=)
KR (1) KR20100133446A (https=)
TW (1) TW200947145A (https=)
WO (1) WO2009119898A1 (https=)

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TWI439813B (zh) * 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
US8896806B2 (en) 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US9223225B2 (en) * 2010-01-08 2015-12-29 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9823580B2 (en) * 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9720331B2 (en) * 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
KR20170026563A (ko) 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법

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US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
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WO1999046835A1 (en) 1998-03-11 1999-09-16 Nikon Corporation Ultraviolet laser apparatus and exposure apparatus comprising the ultraviolet laser apparatus
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
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KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
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JP4543767B2 (ja) 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
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JP5005226B2 (ja) * 2005-01-31 2012-08-22 株式会社ニコン 露光装置及びデバイス製造方法、液体保持方法
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4802604B2 (ja) * 2005-08-17 2011-10-26 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
US7864292B2 (en) * 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
TWI439813B (zh) 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP2007335662A (ja) * 2006-06-15 2007-12-27 Canon Inc 露光装置
JP2008034801A (ja) 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US20090122282A1 (en) 2007-05-21 2009-05-14 Nikon Corporation Exposure apparatus, liquid immersion system, exposing method, and device fabricating method
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method

Also Published As

Publication number Publication date
JP2009239286A (ja) 2009-10-15
WO2009119898A1 (en) 2009-10-01
TW200947145A (en) 2009-11-16
US8233139B2 (en) 2012-07-31
US20090280436A1 (en) 2009-11-12
US20120300181A1 (en) 2012-11-29

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