KR20100036336A - 중량에 비해 높은 전력의 응용을 위한 백 컨택 태양 전지 - Google Patents

중량에 비해 높은 전력의 응용을 위한 백 컨택 태양 전지 Download PDF

Info

Publication number
KR20100036336A
KR20100036336A KR1020107001577A KR20107001577A KR20100036336A KR 20100036336 A KR20100036336 A KR 20100036336A KR 1020107001577 A KR1020107001577 A KR 1020107001577A KR 20107001577 A KR20107001577 A KR 20107001577A KR 20100036336 A KR20100036336 A KR 20100036336A
Authority
KR
South Korea
Prior art keywords
region
substrate
solar cell
regions
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107001577A
Other languages
English (en)
Korean (ko)
Inventor
크리스토퍼 마이클 보너
피터 커즌스
데니스 드 세스터
Original Assignee
선파워 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 선파워 코포레이션 filed Critical 선파워 코포레이션
Publication of KR20100036336A publication Critical patent/KR20100036336A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
KR1020107001577A 2007-06-23 2008-06-23 중량에 비해 높은 전력의 응용을 위한 백 컨택 태양 전지 Withdrawn KR20100036336A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US93695407P 2007-06-23 2007-06-23
US60/936,954 2007-06-23
US12/143,556 US20080314443A1 (en) 2007-06-23 2008-06-20 Back-contact solar cell for high power-over-weight applications
US12/143,556 2008-06-20

Publications (1)

Publication Number Publication Date
KR20100036336A true KR20100036336A (ko) 2010-04-07

Family

ID=40135234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001577A Withdrawn KR20100036336A (ko) 2007-06-23 2008-06-23 중량에 비해 높은 전력의 응용을 위한 백 컨택 태양 전지

Country Status (6)

Country Link
US (1) US20080314443A1 (enExample)
EP (1) EP2168168A2 (enExample)
JP (1) JP2010531542A (enExample)
KR (1) KR20100036336A (enExample)
CN (1) CN201681950U (enExample)
WO (1) WO2009002463A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100071765A1 (en) * 2008-09-19 2010-03-25 Peter Cousins Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
EP2261976A1 (en) * 2009-06-12 2010-12-15 Applied Materials, Inc. Semiconductor device module, method of manufacturing a semiconductor device module, semiconductor device module manufacturing device
KR101893331B1 (ko) * 2009-09-17 2018-08-30 사이오닉스, 엘엘씨 감광성 이미징 장치 및 이와 관련된 방법
CN102222722B (zh) * 2010-04-14 2014-06-18 圆益Ips股份有限公司 太阳能电池元件的制备方法及利用该方法制备的太阳能电池元件
TWI420700B (zh) * 2010-12-29 2013-12-21 Au Optronics Corp 太陽能電池
US9559228B2 (en) * 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
WO2013058707A1 (en) * 2011-10-21 2013-04-25 Trina Solar Energy Development Pte Ltd All-back-contact solar cell and method of fabricating the same
TW201320364A (zh) * 2011-11-07 2013-05-16 Motech Ind Inc 矽基板、太陽能電池基板的製造方法及太陽能電池
CN103137721B (zh) * 2011-11-28 2016-01-20 茂迪股份有限公司 硅基板、太阳能电池基板的制造方法及太阳能电池
US10020410B1 (en) * 2012-11-01 2018-07-10 University Of South Florida Solar tiles and arrays
US20140166094A1 (en) * 2012-12-18 2014-06-19 Paul Loscutoff Solar cell emitter region fabrication using etch resistant film
US20140166093A1 (en) * 2012-12-18 2014-06-19 Paul Loscutoff Solar cell emitter region fabrication using n-type doped silicon nano-particles
US20150155398A1 (en) * 2013-08-30 2015-06-04 Mehrdad M. Moslehi Photovoltaic monolithic solar module connection and fabrication methods
ES2864962T3 (es) * 2014-04-30 2021-10-14 1366 Tech Inc Procedimientos y aparatos para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente más gruesas que otras regiones

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US5228924A (en) * 1991-11-04 1993-07-20 Mobil Solar Energy Corporation Photovoltaic panel support assembly
KR100370410B1 (ko) * 1996-01-09 2003-03-28 삼성전자 주식회사 후면 함몰전극형 태양전지의 제조방법
JP3070489B2 (ja) * 1996-10-09 2000-07-31 トヨタ自動車株式会社 集光型太陽電池素子
JPH10117004A (ja) * 1996-10-09 1998-05-06 Toyota Motor Corp 集光型太陽電池素子
US6034319A (en) * 1998-07-30 2000-03-07 Falbel; Gerald Immersed photovoltaic solar power system
JP3764843B2 (ja) * 2000-06-06 2006-04-12 シャープ株式会社 太陽電池セル
EP1421354B1 (de) * 2001-08-11 2010-04-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Berührungsloses messen von beanspruchungen rotierender teile
US7298314B2 (en) * 2002-08-19 2007-11-20 Q-Track Corporation Near field electromagnetic positioning system and method
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7593740B2 (en) * 2004-05-12 2009-09-22 Google, Inc. Location-based social software for mobile devices
JP2007049079A (ja) * 2005-08-12 2007-02-22 Sharp Corp マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法
DE102006032833B4 (de) * 2005-08-26 2016-11-03 Honda Motor Co., Ltd. Transponder-Auswertungssystem und Verfahren
US7809805B2 (en) * 2007-02-28 2010-10-05 Facebook, Inc. Systems and methods for automatically locating web-based social network members

Also Published As

Publication number Publication date
US20080314443A1 (en) 2008-12-25
WO2009002463A3 (en) 2009-03-19
JP2010531542A (ja) 2010-09-24
WO2009002463A2 (en) 2008-12-31
CN201681950U (zh) 2010-12-22
EP2168168A2 (en) 2010-03-31

Similar Documents

Publication Publication Date Title
KR20100036336A (ko) 중량에 비해 높은 전력의 응용을 위한 백 컨택 태양 전지
KR101655249B1 (ko) 후방 접촉 슬리버 셀
TWI545793B (zh) 薄矽晶太陽能電池及其製造方法
CN106057934B (zh) 背接触太阳能电池装置
CN106159008B (zh) 太阳能电池及其制造方法
US20200212230A1 (en) Leakage pathway layer for solar cell
US8334160B2 (en) Semiconductor photovoltaic devices and methods of manufacturing the same
TWI455342B (zh) Solar cell with selective emitter structure and manufacturing method thereof
JP2005510885A (ja) 背面接点を有する太陽電池の製造
JP6091458B2 (ja) 光電変換装置およびその製造方法
WO2015141326A1 (ja) 光電変換素子および光電変換素子の製造方法
TWI401810B (zh) 太陽能電池
JP2000101111A (ja) 太陽電池の製造方法
TW202209694A (zh) 太陽能電池製造
TW202218176A (zh) 太陽能電池製造
US20110168226A1 (en) Solar cell module and method of manufacturing the same
JP6151812B2 (ja) バックコンタクト型太陽電池セット及びその製造方法
JP6770947B2 (ja) 光電変換素子
KR101024322B1 (ko) 태양전지용 웨이퍼 제조 방법, 그 방법으로 제조된 태양전지용 웨이퍼 및 이를 이용한 태양전지 제조 방법
JP6402168B2 (ja) 両面型太陽電池構造の製造方法
JP2014127567A (ja) 太陽電池の製造方法
TWI462308B (zh) 半導體光電元件及其製造方法
JP2017208520A (ja) 太陽電池及びその製造方法
TWI425647B (zh) 具有平坦晶圓背面之太陽能電池之製造方法
CN120981044A (zh) 一种光伏电池及其制备方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100122

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid