CN102222722B - 太阳能电池元件的制备方法及利用该方法制备的太阳能电池元件 - Google Patents
太阳能电池元件的制备方法及利用该方法制备的太阳能电池元件 Download PDFInfo
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- CN102222722B CN102222722B CN201110095871.2A CN201110095871A CN102222722B CN 102222722 B CN102222722 B CN 102222722B CN 201110095871 A CN201110095871 A CN 201110095871A CN 102222722 B CN102222722 B CN 102222722B
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 239000007864 aqueous solution Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000001312 dry etching Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 134
- 230000015572 biosynthetic process Effects 0.000 claims description 49
- 238000002360 preparation method Methods 0.000 claims description 47
- 230000002378 acidificating effect Effects 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000001802 infusion Methods 0.000 claims description 5
- 239000002585 base Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 ITO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0034501 | 2010-04-14 | ||
KR20100034501 | 2010-04-14 | ||
KR1020100130429A KR101630802B1 (ko) | 2010-04-14 | 2010-12-20 | 태양전지소자의 제조방법 및 그 방법에 의하여 제조된 태양전지소자 |
KR10-2010-0130429 | 2010-12-20 |
Publications (2)
Publication Number | Publication Date |
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CN102222722A CN102222722A (zh) | 2011-10-19 |
CN102222722B true CN102222722B (zh) | 2014-06-18 |
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CN201110095871.2A Expired - Fee Related CN102222722B (zh) | 2010-04-14 | 2011-04-14 | 太阳能电池元件的制备方法及利用该方法制备的太阳能电池元件 |
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Country | Link |
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CN (1) | CN102222722B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050086223A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 태양전지용 실리콘 기판 및 실리콘 기판 텍스처링 방법과그 장치 |
CN101573801A (zh) * | 2007-10-24 | 2009-11-04 | 三菱电机株式会社 | 太阳能电池的制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080314443A1 (en) * | 2007-06-23 | 2008-12-25 | Christopher Michael Bonner | Back-contact solar cell for high power-over-weight applications |
KR20100013649A (ko) * | 2008-07-31 | 2010-02-10 | 삼성전자주식회사 | 광전소자 및 이의 제조 방법 |
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2011
- 2011-04-14 CN CN201110095871.2A patent/CN102222722B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050086223A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 태양전지용 실리콘 기판 및 실리콘 기판 텍스처링 방법과그 장치 |
CN101573801A (zh) * | 2007-10-24 | 2009-11-04 | 三菱电机株式会社 | 太阳能电池的制造方法 |
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Owner name: YUANYI IPS CO., LTD. Free format text: FORMER OWNER: JIN BINGJUN Effective date: 20120905 |
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Effective date of registration: 20120905 Address after: Gyeonggi Do, South Korea Applicant after: WONIK IPS Co.,Ltd. Address before: Chungnam, South Korea Applicant before: Jin Bingjun |
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Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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Effective date of registration: 20160727 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
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Granted publication date: 20140618 Termination date: 20210414 |