CN201681950U - 用于高功率重量比应用的背接触式太阳能电池 - Google Patents

用于高功率重量比应用的背接触式太阳能电池 Download PDF

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Publication number
CN201681950U
CN201681950U CN2008900000692U CN200890000069U CN201681950U CN 201681950 U CN201681950 U CN 201681950U CN 2008900000692 U CN2008900000692 U CN 2008900000692U CN 200890000069 U CN200890000069 U CN 200890000069U CN 201681950 U CN201681950 U CN 201681950U
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China
Prior art keywords
solar cell
region
substrate
type doped
regions
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Expired - Fee Related
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CN2008900000692U
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English (en)
Chinese (zh)
Inventor
克里斯托弗·迈克尔·邦纳
彼得·卡曾斯
丹尼斯·德塞斯特
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SunPower Corp
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SunPower Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2008900000692U 2007-06-23 2008-06-23 用于高功率重量比应用的背接触式太阳能电池 Expired - Fee Related CN201681950U (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US93695407P 2007-06-23 2007-06-23
US60/936,954 2007-06-23
US12/143,556 2008-06-20
US12/143,556 US20080314443A1 (en) 2007-06-23 2008-06-20 Back-contact solar cell for high power-over-weight applications
PCT/US2008/007779 WO2009002463A2 (en) 2007-06-23 2008-06-23 Back-contact solar cell for high power-over-weight applications

Publications (1)

Publication Number Publication Date
CN201681950U true CN201681950U (zh) 2010-12-22

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Family Applications (1)

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CN2008900000692U Expired - Fee Related CN201681950U (zh) 2007-06-23 2008-06-23 用于高功率重量比应用的背接触式太阳能电池

Country Status (6)

Country Link
US (1) US20080314443A1 (enExample)
EP (1) EP2168168A2 (enExample)
JP (1) JP2010531542A (enExample)
KR (1) KR20100036336A (enExample)
CN (1) CN201681950U (enExample)
WO (1) WO2009002463A2 (enExample)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN103137721B (zh) * 2011-11-28 2016-01-20 茂迪股份有限公司 硅基板、太阳能电池基板的制造方法及太阳能电池
CN106233468A (zh) * 2014-04-30 2016-12-14 1366科技公司 用于制造带有比其他区相对更厚的局部受控区的薄半导体晶片的方法和装置以及这种晶片

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US20100071765A1 (en) * 2008-09-19 2010-03-25 Peter Cousins Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
EP2261976A1 (en) * 2009-06-12 2010-12-15 Applied Materials, Inc. Semiconductor device module, method of manufacturing a semiconductor device module, semiconductor device module manufacturing device
EP2478560A4 (en) * 2009-09-17 2014-06-18 Sionyx Inc LIGHT-SENSITIVE IMAGING DEVICES AND CORRESPONDING METHODS
CN102222722B (zh) * 2010-04-14 2014-06-18 圆益Ips股份有限公司 太阳能电池元件的制备方法及利用该方法制备的太阳能电池元件
TWI420700B (zh) * 2010-12-29 2013-12-21 Au Optronics Corp 太陽能電池
US9559228B2 (en) * 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
WO2013058707A1 (en) * 2011-10-21 2013-04-25 Trina Solar Energy Development Pte Ltd All-back-contact solar cell and method of fabricating the same
TW201320364A (zh) * 2011-11-07 2013-05-16 Motech Ind Inc 矽基板、太陽能電池基板的製造方法及太陽能電池
US10020410B1 (en) * 2012-11-01 2018-07-10 University Of South Florida Solar tiles and arrays
US20140166094A1 (en) * 2012-12-18 2014-06-19 Paul Loscutoff Solar cell emitter region fabrication using etch resistant film
US20140166093A1 (en) * 2012-12-18 2014-06-19 Paul Loscutoff Solar cell emitter region fabrication using n-type doped silicon nano-particles
US20150155398A1 (en) * 2013-08-30 2015-06-04 Mehrdad M. Moslehi Photovoltaic monolithic solar module connection and fabrication methods

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US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US5228924A (en) * 1991-11-04 1993-07-20 Mobil Solar Energy Corporation Photovoltaic panel support assembly
KR100370410B1 (ko) * 1996-01-09 2003-03-28 삼성전자 주식회사 후면 함몰전극형 태양전지의 제조방법
JPH10117004A (ja) * 1996-10-09 1998-05-06 Toyota Motor Corp 集光型太陽電池素子
JP3070489B2 (ja) * 1996-10-09 2000-07-31 トヨタ自動車株式会社 集光型太陽電池素子
US6034319A (en) * 1998-07-30 2000-03-07 Falbel; Gerald Immersed photovoltaic solar power system
JP3764843B2 (ja) * 2000-06-06 2006-04-12 シャープ株式会社 太陽電池セル
WO2003014686A1 (de) * 2001-08-11 2003-02-20 FAG Kugelfischer Georg Schäfer AG Berührungsloses messen von beanspruchungen rotierender teile
US7298314B2 (en) * 2002-08-19 2007-11-20 Q-Track Corporation Near field electromagnetic positioning system and method
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7593740B2 (en) * 2004-05-12 2009-09-22 Google, Inc. Location-based social software for mobile devices
JP2007049079A (ja) * 2005-08-12 2007-02-22 Sharp Corp マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法
DE102006032833B4 (de) * 2005-08-26 2016-11-03 Honda Motor Co., Ltd. Transponder-Auswertungssystem und Verfahren
US7809805B2 (en) * 2007-02-28 2010-10-05 Facebook, Inc. Systems and methods for automatically locating web-based social network members

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137721B (zh) * 2011-11-28 2016-01-20 茂迪股份有限公司 硅基板、太阳能电池基板的制造方法及太阳能电池
CN106233468A (zh) * 2014-04-30 2016-12-14 1366科技公司 用于制造带有比其他区相对更厚的局部受控区的薄半导体晶片的方法和装置以及这种晶片
CN106233468B (zh) * 2014-04-30 2019-11-29 1366科技公司 用于制造带有比其他区相对更厚的局部受控区的薄半导体晶片的方法和装置以及这种晶片

Also Published As

Publication number Publication date
US20080314443A1 (en) 2008-12-25
KR20100036336A (ko) 2010-04-07
JP2010531542A (ja) 2010-09-24
WO2009002463A2 (en) 2008-12-31
WO2009002463A3 (en) 2009-03-19
EP2168168A2 (en) 2010-03-31

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101222

Termination date: 20120623