KR20100025515A - 플라즈마 처리에서 처리 균일성을 개선하기 위한 장치 및 방법 - Google Patents

플라즈마 처리에서 처리 균일성을 개선하기 위한 장치 및 방법 Download PDF

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Publication number
KR20100025515A
KR20100025515A KR1020097024756A KR20097024756A KR20100025515A KR 20100025515 A KR20100025515 A KR 20100025515A KR 1020097024756 A KR1020097024756 A KR 1020097024756A KR 20097024756 A KR20097024756 A KR 20097024756A KR 20100025515 A KR20100025515 A KR 20100025515A
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KR
South Korea
Prior art keywords
plasma
sacrificial
workpiece
peripheral edge
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097024756A
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English (en)
Korean (ko)
Inventor
지안강 자오
제임스 디. 게티
Original Assignee
노드슨 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 노드슨 코포레이션 filed Critical 노드슨 코포레이션
Publication of KR20100025515A publication Critical patent/KR20100025515A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020097024756A 2007-06-01 2008-05-23 플라즈마 처리에서 처리 균일성을 개선하기 위한 장치 및 방법 Withdrawn KR20100025515A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US94151807P 2007-06-01 2007-06-01
US60/941,518 2007-06-01
US12/125,335 US20080296261A1 (en) 2007-06-01 2008-05-22 Apparatus and methods for improving treatment uniformity in a plasma process
US12/125,335 2008-05-22

Publications (1)

Publication Number Publication Date
KR20100025515A true KR20100025515A (ko) 2010-03-09

Family

ID=40086939

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097024756A Withdrawn KR20100025515A (ko) 2007-06-01 2008-05-23 플라즈마 처리에서 처리 균일성을 개선하기 위한 장치 및 방법

Country Status (7)

Country Link
US (1) US20080296261A1 (enrdf_load_stackoverflow)
JP (1) JP2010529656A (enrdf_load_stackoverflow)
KR (1) KR20100025515A (enrdf_load_stackoverflow)
CN (1) CN101681785B (enrdf_load_stackoverflow)
DE (1) DE112008001482T5 (enrdf_load_stackoverflow)
TW (1) TW200905777A (enrdf_load_stackoverflow)
WO (1) WO2008150739A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150040888A (ko) * 2012-08-06 2015-04-15 노드슨 코포레이션 다른 크기의 워크피스를 취급하기 위한 장치 및 방법

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CN101506066B (zh) 2006-08-22 2012-11-28 诺信公司 用于在处理系统中处理工件的设备和方法
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
WO2009152378A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Formation of solar cell-selective emitter using implant and anneal method
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
CN103165374B (zh) * 2011-12-08 2017-05-10 中微半导体设备(上海)有限公司 一种等离子体处理装置及应用于等离子处理装置的边缘环
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
CN112673450B (zh) * 2018-07-30 2024-06-11 诺信公司 用于利用等离子体的工件加工的系统
CN113035680B (zh) * 2019-12-24 2024-06-14 中微半导体设备(上海)股份有限公司 用于真空设备的调平机构和等离子体处理装置
CN111180370A (zh) * 2020-02-21 2020-05-19 北京北方华创微电子装备有限公司 晶圆承载托盘及半导体加工设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786359A (en) * 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JPH0373524A (ja) * 1989-08-14 1991-03-28 Fujitsu Ltd エッチング方法
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
DE29813326U1 (de) * 1998-07-29 1998-12-10 PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf Verbesserte Vorrichtung zum Schutz von elektrostatischen Haltesystemen in Anlagen zur Bearbeitung von Wafern
JP2000299305A (ja) * 1999-04-16 2000-10-24 Toshiba Corp プラズマ処理装置
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
KR100674922B1 (ko) * 2004-12-02 2007-01-26 삼성전자주식회사 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치
CN101506066B (zh) * 2006-08-22 2012-11-28 诺信公司 用于在处理系统中处理工件的设备和方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150040888A (ko) * 2012-08-06 2015-04-15 노드슨 코포레이션 다른 크기의 워크피스를 취급하기 위한 장치 및 방법

Also Published As

Publication number Publication date
DE112008001482T5 (de) 2010-04-29
JP2010529656A (ja) 2010-08-26
US20080296261A1 (en) 2008-12-04
WO2008150739A1 (en) 2008-12-11
TW200905777A (en) 2009-02-01
CN101681785A (zh) 2010-03-24
CN101681785B (zh) 2012-05-09

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Date Code Title Description
PA0105 International application

Patent event date: 20091127

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid