TW200905777A - Apparatus and methods for improving treatment uniformity in a plasma process - Google Patents

Abstract

Apparatus and methods for improving treatment uniformity in a plasma process. The sacrificial body, which is extends about an outer peripheral edge of the workpiece during plasma processing, is composed of a plasma-removable material. The sacrificial body may include multiple sections that are arranged to define a circular geometrical shape. The sacrificial body functions to increase the effective outer diameter of the workpiece, which operates to alleviate detrimental edge effects intrinsic to plasma processing by effectively reducing the etch rate near the outer peripheral edge of the workpiece.

Description

200905777 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates generally to apparatus and methods for processing workpieces by means of plasma, and more particularly to improving electricity in a plasma processing system Apparatus and method for treating pulp uniformity. This application claims the benefit of U.S. Provisional Application No. 6/941,518, filed June 1, 2007. The entire disclosure of this provisional application is hereby incorporated by reference.

[Prior Art] Uniform plasma processing for wafer level applications is a consideration in the semiconductor manufacturing industry. One problem that plagues conventional etching processes and plasma processing equipment is the etch rate non-uniformity across a workpiece (e.g., a wafer). The workpiece edge effect represents a common source of such etch rate non-uniformities. The residual rate uniformity can be determined from the quotient of the difference between the maximum lateral etch rate and the minimum lateral etch rate on the treated surface and the product of the average (four) rate across the workpiece. Typically, the maximum etch rate occurs near the peripheral edge of the workpiece and the minimum etch rate is observed near the center of the workpiece. Efforts have been made to modify the etch rate uniformity across the surface area of the workpiece by the conventional method. For example, it can be used to talk about the use of α J to use the magnetron to generate plasma. However, these solutions add significantly to the cost of the plasma processing equipment. It is expected that a cost-effective solution to the ancient, soil, and solution will solve the problem of the edge effect of the workpiece that occurs in the conventional processing system and adversely affects the uniformity of plasma processing across the surface of the workpiece, and the plasma. Other products that have a negative impact on the uniformity of processing at the dish. '131725.doc 200905777 SUMMARY OF THE INVENTION In one embodiment, a device is provided for use in plasma processing of a workpiece. The device comprises a sacrificial ring composed of -plasma removable material. The sacrificial ring is adapted to be disposed about an outer peripheral edge of the workpiece to effectively increase an outer diameter of the workpiece. In another embodiment, a means is provided for processing a workpiece in a plasma: a vacuum enclosure containing a plasma is included in a 5 liter apparatus. The vacuum enclosure includes a support bracket adapted to receive a second surface of the workpiece when the first surface of the workpiece is treated by electropolymerization. The apparatus further includes a sacrificial ring of a plasma removable material extending around an outer peripheral edge of the workpiece supported on the carrier to effectively increase an outer diameter of the workpiece. In yet another embodiment, a method is provided for plasma processing a workpiece having a surface, a second surface, and a peripheral edge connected to the first and second surfaces. The method includes disposing a sacrificial ring of plasma-removable material around a peripheral edge of the workpiece and exposing the first surface of the workpiece to the plasma. The method further includes a maximum change from a position of the (four) speed of the workpiece to a position on the sacrificial ring. [Embodiment] Referring to FIG. 1 · 4, ^ ^ or the enclosure ancient electric processing system 10 generally includes a vacuum vessel pair of support arms Γ / 14 and a pedestal 16 on which the cover 14 rests; a lower electrical: 24 which is connected to the cover 14; - an upper electrode (1) and - the treatment system 10 further comprises - a separate member or Ring 26, 131725.doc 200905777 The crucible is located between the upper electrode 22 and the lower electrode 24 and contacts the opposing faces around the circumference of the upper and lower electrodes 22, 24. The opposite faces of the electrodes 22, 24 are generally flat and parallel plates and have approximately the same surface area. The support arms 18, 20 mechanically couple the cover 14 to a lifting device 28 (not shown) that can be raised relative to the base 16 in a raised position (Fig. (10) - lowered position (Fig. 5) The cover 14 is raised vertically and lowered. When the cover 14 is in contact with the base 16, a treatment zone μ is defined to be vertically confined between the inwardly facing horizontal surfaces of the electrodes 22, 24 and laterally constrained by The empty door inside the inwardly facing vertical surface of the side wall defined by the separating ring 26 is in the raised position and can be advanced into the processing area 28 to insert the unprocessed workpiece 30 and remove the treated workpiece 3 〇. 5) can be established in the processing area 28 - suitable for the environment located in the processing area 28 = per-continuous workpiece 30. Between the position of the cover 14 by means of a raised surface relative to the base As the lifting device moves, the upper electrode U moves along the cover 14. - The power level and operation of the electrodes 22, 24 are controlled by means of a shielded coaxial cable or transmission line 33, 34 connected to the electrodes 22, 24, respectively (Fig. 2) Frequency. Power supply 32 can be tied - at an extremely low frequency (eg For example, 5 〇 and Hz) 'at-high RF (eg '4 〇 and 13 56 μ called a radio (for example, lk called or at - microwave frequency (for example, 24 he made AC power. Power supply 32 It is also operated under the dual frequency superimposed on each other. The other is selected as 'power supply 32. It can be used to restore the direct current (DC) power supply of the slurry, and the medium plasma does not oscillate. 32 Supplied—Provides radio frequency (RF) power components for dense plasma and a DC power component that is independently added to the tamper without affecting the plasma density. Power supply 32 can operate at one or more radio frequencies And an impedance matching network (not shown) for measuring the power of the free electrodes 22, 24 and the plasma indicated by the plasma reflected back to the power source 32. The impedance matching network adjusts the operating frequency of the power source 32. To minimize the reflected power, those skilled in the art understand the construction of such matching networks. For example, the impedance matching network can change the capacitance of the variable capacitor in the matching network when the load changes. To tune the matching network to make the power supply 32 The impedance is equal to the impedance of the load. Of course, the power and voltage levels and operating frequency can be varied depending on the particular application. When the plasma processing system 10 is operating, a vacuum pump 36 is continuously pumped through a vacuum manifold 38. By-products produced by the plasma process and unreacted source gases from the treatment zone 28. The vacuum pump % is operable to maintain the total pressure in the treatment zone 28 at a sub-atmospheric level that is sufficiently low to promote plasma generation. Typical pressures suitable for plasma formation range from about twenty (2 (n)) mTorr to greater than about fifty (50) Torr. The pressure in the treatment zone 28 is controlled according to a particular desired H-feed process. The source, gas is supplied to the partial pressure contribution composition of the evacuated treatment zone 28, which may include one or more independent gas species. With continued reference to Figures 1-4, a sealing member 40 is compressed between the separation ring % and the upper electrode 22. When the cover 14 is lowered into contact with the base as shown in Figure 5, another sealing member 42 is compressed between the circumference of one of the split ring 26 and the lower electrode 24. The sealing members 40, 42 are illustrated as conventional elastic loops. Although the invention is not so limited, a conductive 131725.doc 200905777 member 43 is captured between the respective perimeters of the cover 4 and the base 16 when the cover is in its lowered position, which is metallic. 43 provides a good electrical contact between the cover 14 and the base 16. An air inlet plate 44 (Fig. 4) is secured to a horizontal surface on one of the upper electrodes 22. The air inlet plate 44 is conveyed by means of a gas weir 46 and Line 48 is coupled to a source gas supply 5'. A mass flow controller and a flow measuring device (not shown) are provided to cooperate to adjust the flow of each process gas from source gas supply 50 to gas enthalpy 46. The air inlet plate 44 includes a distribution passage (not shown) and the upper electrode package () includes a passage (not shown) coupled to the distribution passage of the air inlet plate 44. The passage in the upper electrode 22 is combined with the treatment area 28 to The process gas is injected into the process chamber. 1 〇 includes a microprocessor based controller 52 (FIG. 2), and the microprocessor based controller 52 is programmed to control the operation of the power source 32, the vacuum pump 36, and the source gas supply 5, among other components. For example, the controller adjusts the power level, voltage, current, and frequency of the power source 32 and coordinates the supply of the source gas from the source gas supply 50 to the U pumping rate of the vacuum pumping % to a particular plasma process. And the application defines a suitable pressure in the processing region. During the processing of the workpiece 30, the power applied by the power source 32 between the electrodes u and the electric field generates an electromagnetic field in the processing region 28, and the cover 14 is in contact with the base (10). And when there is an environment suitable for the electropolymerization treatment in the treatment region, the electromagnetic field is defined between the electrodes 22 and 24. The electromagnetic field excites the atoms or molecules of the source gas present in the treatment region to the electropolymerization state. The power is applied from the power source 32 and remains constant during the plasma processing. 131725.doc -10- 200905777 The transmission line 34 electrically coupled to the lower electrode 24 in a known manner is routed to the lower electrode 24. The transmission line 33 A known manner is electrically coupled to one or both of the electrodes 22. A forced flow of coolant can be routed between the electrodes 22, 24 and the shroud 12 through the air gap 56 to cool the processing system 1〇, and In particular, the electrodes 22, 24 are cooled. To this end, a tube fitting 54 (Fig. 2) may be provided in the cover 14 to define a coolant for coupling a coolant supply 55 (Fig. 2) to the air gap 56. port.

The electrodes 22, 24 are formed from a conductive material, such as aluminum. The separation ring % is composed of a non-conductive dielectric material and is configured to withstand the "internal plasma environment of the treatment zone without unduly contaminating the treated workpiece 3 . In general, this means forming the separation ring 26 The material should be sufficiently resistant to the etching of the plasma present in the processing zone 。. The separation ring 26 defines a vertical sidewall of the electrically non-conductive material in addition to providing a vacuum seal between the electrode and the electrode. The exposed material on the workpiece 3 contacts and interacts to effect the desired surface modification. The plasma is configured to select parameters (e.g., the chemical nature of the source gas, the pressure within the processing region 28, and the application to the electrodes 22, 24). The amount of power and/or power is used to implement the desired surface modification of the workpiece 3. The processing system 1 may include an endpoint identification system (not shown) that automatically identifies a plasma process "column" When the etch process has arrived - the intended end point, or another - (4), the electric process can be timed based on the experience of a process method for a predetermined time. Referring to Figures 3, 3A, 4, 5 and 6, Ganzi Rumen and 6 of which the same reference numerals refer to the same features in Figures 2 and 2, the plasma processing system 1 further includes a vacuum enclosure 12 Vertical lifting mechanism 58. The vertical lifting mechanism views each workpiece 131725.doc 200905777 30 is housed in a condition that is raised relative to the lower electrode 24. The workpiece centering device 6 can be combined with the opening and closing cover 14 and in an elevated position (best as shown in Figure 4, when the lid is open) and - lowered position (most As best seen in Figure 5, the cover 14 is automatically moved between in a closed position relative to the base 16. In other words, the workpiece holder 60 moves toward the lowered position when the upper electrode 22 is moved toward the lowered position by the cover 14 toward the lower electrode 24 (four) with the sealing treatment region μ and moves toward the raised position as the upper electrode 22 moves away from the lower electrode 24 by the cover. The vertical lift mechanism 58 automatically places the workpiece 3 into the processing position when the cover U is placed in a lowered position to contact the base 16 to seal the surrounding area of the processing area. The vertical lifting mechanism 58 generally comprises: a workpiece holder 6〇; a set of resiliently biased support members 62 mechanically contacting the workpiece holder 6〇 with the lower electrode 一组 a set of resiliently biased pushing devices “, It protrudes from the upper electrode : toward the lower electrode 24 and the workpiece missing member 6; a lifting plate 66; and a workpiece % 68. The workpiece clamp 6 is positioned between the upper electrode 22 and the lower electrode 2 at the peripheral edge or The circumference 65 is surrounded by a split ring 2 stone. As best shown in Figures 3 and 3, the lift plate 66 and the workpiece ring 68 are, for example, carried by a lifting plate 66 or a workpiece ring 68. A lock (not shown) and the other of the lift plate 66 or the workpiece ring 68 carries a set-type (four): aligned and mated socket (not shown) into the socket type engagement engagement. The female is placed on the lower electrode 24. The cover 7〇 includes a brim and a support 74 under the brim. The cap 72 can also be engaged with the support 74 by means of a pin-in socket type or alternatively, the cap 72 and the branch (4) The whole piece and the piece can be formed. When the crucible 14 is lowered, the cover plate 7〇 and the lower electrode 24 have good 131725.doc -12· 200905777 The same is true for the electrical contact fixture 60, the workpiece 30 and the IT farm long-term landing plate 66. Thus, the plasma processing system 10 is operating to generate electricity within the processing region 28 and to utilize the electricity When the workpiece 3 is processed inside the processing region 28, the lower electrode 24 is at approximately equal potential. A notch % is provided in the vicinity of each of the corners of the lower electrode 24. Each of the notches 76 has a - base Seat 78, pedestal 78 is shown to leave a lower electrode wall relatively thin material wall after forming or machining each notch 76 in lower electrode 24. A mounting post 80 having an internal threaded opening 82 is self-notch 76 The base 78 of the person protrudes. Each of the mounting posts 8 can be positioned substantially coaxial with the corresponding recess 76. In the assembly of the forming member, a guide pin has a screw, and the large end 84 of the text. The internal threaded opening 82 of the female parenting member 80 is aligned with the internal threaded opening 每一 of each of the mounting posts 8 so that the respective guiding pins 86 project in the direction toward the lifting plate 66.

(Each J 6 also has a substantially cylindrical side wall 88 extending to the base π on the periphery and a beveled or flared wheel disposed between the side (10) and the top surface 92 of the lower electrode The rim 90 is limited. The diameter of the flared rim of the intersecting top surface 92 is greater than the diameter of the side wall 88 of each recess 76 and diverge in the direction of a top surface as the straightness increases. 9:=Γ86 includes one The self-threaded tip 84 faces a generally cylindrical, unthreaded shank 94 extending outwardly from the head. The head shape % may include a 98' recessed feature 98 for storage - for threading the guide lock 86 The tip end 84 is in contact with the tip end of the internal threaded tool (not shown), and the vicinity of the top surface 92H of the electric (4) that matches the tip of the internal thread is at least partially located in the lower part of the head. 13I725.doc -13- 200905777 The flared surface 100 near the threaded shank 94. The unthreaded shank 94 of each guide pin 86 and the side wall 88 of each recess 76 have a generally coaxial arrangement. One of the two includes a corresponding one of the guide pins 86 coupled to the lift plate 66 of the workpiece holder 60. The stop block 1〇2. Each of the contact ghosts 102 includes a center 膛 or a passage 1 〇8 having a length 104 of the enlarged head 106 and an extended body 104. The enlarged head shape 1 〇 6 A radially outwardly projecting portion relative to the body 104 defines an edge or lip 11 围绕 extending around the circumference of the body 丨〇 4. Each of the enlarged heads i 06 of the contact block i 02 further includes a departure The first tapered or tapered outer side wall U2 having a reduced distance of the lip 11 直径 and decreasing in diameter, and a second bevel or cone added to the diameter as the distance from the lip 11 is increased An outer sidewall 114. The outer sidewall 丨丨4 is disposed between the lip and the tapered outer sidewall n 2. The passage 108 includes a generally cylindrical surface 116 and a portion that narrows a portion of the generally cylindrical surface 116. A beveled or tapered surface 丨丨 8. A flared recess 120 is defined adjacent each of the peripheral corners of the lift plate 66. Each of the tapered outer sidewalls 112 of each of the stop blocks 1 〇 2 and the flared recess One of the 120 pairs is sprayed together. The depth of each flared recess 12 is selected such that the lift plate 66 and the stop block 1 2, each of the inclined surfaces 122 of the flared recesses 12 is in contact with the tapered outer side wall n2 of each of the contact blocks 1 and 2. The angle of inclination of each of the flared recesses 120 corresponds to the contact block i 〇 2 The tapered outer side wall 丨 2 is matched to help secure the stop block 102 to the lift plate 66 and also to permit the prepared movability of the lift plate 66 by a sufficient amount of vertical force. The tapered surface 118 of the passage 1 〇 8 in the stop block 1 通常 2 is typically located between one of the recesses 76 in the lower electrode 24 and the workpiece holder 131725.doc 14 200905777. A spring element 124 is disposed in each of the recesses, and the spring element 124 can have the form of a compression spring formed by a helical coil. The female one spring element 丨 24 is confined within each recess 76 and captured between the base 78 and the lip u〇 on each of the stop blocks 102. As best shown in Figure 6, the spring element 124 extends when the workpiece holder 6 is in the raised position. Therefore, the lift plate 66 of the workpiece holder 6 and the workpiece ring are supported on the top of the support member 62 in a resilient floating manner. The spring elements 124 collectively have a spring force sufficient to suspend the lift plate 66 above the top surface 92 of the lower electrode 24 by the load supplied by the lift plate 66 and the workpiece ring 68. The tapered surface 1 18 contacts the flared surface 1 上 on the head 96 of the guide pin 86 to provide a forced stop for vertical movement when the workpiece holder 60 is in the raised position. The angle of inclination of the flared surface 100 matches the tapered surface i丨8 so that each of the stop blocks 1〇2 is self-centered on each of the guide pins 86 when the workpiece holder 60 is in the raised position. This permits the workpiece holder 6 to return to a reproducible spatial position when residing in the raised position. Again, this provides a reproducible position within the plasma processing system 1 for the workpiece 3 carried by the workpiece holder 60. As explained in detail below, the movement of the cover 14 toward the lowered position (Fig. 5) causes the workpiece holder 60 to be moved. Moving toward the lowered position, and thereby compressing the spring element 124. As the workpiece holder 60 is lowered, the heads 96 of each of the guide pins 86 are moved along their respective passages 108 toward the lift plate 66. As best seen in Figures 3 and 3A, the workpiece holder 6A includes a central opening 13 完全 extending completely through the lift plate 66 and the workpiece ring 68 and a radial extension from the central opening 130 of the workpiece holder (9) to the outer perimeter 65. Clearance 132. The cover plate 7 is sized to have a width substantially the same as the width of the gap 132, 131725.doc -15-200905777. When the workpiece holder 60 is lowered to the process position, the cover plate 7 is filled with the gap 132 such that the central opening 130 is surrounded by a substantially flat surface defined by the top surface 134 of the workpiece ring 68 and the top surface 136 of the cover tube. . To facilitate the necessary coplanar arrangement, the respective thicknesses of the cover plate 70 and the workpiece holder 60 are selected to approximate: etc., which permits the top surfaces 134, 136 to be approximately flush when the workpiece holder 6 is at its lowered position. In a representative embodiment, the 'central opening " is circular. However, the central opening 130 can have other shapes, such as a rectangular shape. The gap 13 2 is defined between the opposing sidewalls 133, 135 that extend through the thickness of the workpiece ring 68. The width of the gap 132 in the workpiece holder 6 is selected such that an end effector can pass through the gap 132 and into the central opening 13 to transfer the unprocessed workpiece 3G to the workpiece holder 6G and remove the processed workpiece 30 from the m6G. . As understood by those skilled in the art, the end effector is operatively coupled to a robot (e.g., a Selective Compliance Joint/Assembly Robotic Arm (SCARA) robot). The lower electrode 24 further includes a removable electrode section 138 including a mounting flange 14A and a bracket portion 142 in a recess defined in the lower electrode 24. A bracket portion 142 defining a representative workpiece support protrudes from the mounting flange 140 toward the upper electrode 22. The electrode section 138 is secured to the lower electrode 24 by conventional fasteners and surrounds the remainder. The top surface 92 of the lower electrode 24 is approximately flush with the top surface 92 of the mounting flange 140. The surface area of the bracket portion 142 above the top surface 144 above the mounting flange 14 is approximately equal to the open cross-sectional area radially inside the center opening π 。. The diameter of the bracket portion 142 is approximately equal to the center opening of the workpiece ring 68. 131725.doc • 16- 200905777 no diameter. The electrode section 138 has good electrical contact with the remainder of the lower electrode 24 so that when the plasma processing system 10 is operating and the processing area 28 is in the presence of electricity, the bracket portion 142 and the whip 74 are substantially identical to the lower portion Potential. The cover plate 70 includes another elevated region of the electrode section 138 that protrudes above the plane of the mounting flange 14''. The cover 7 and bracket portion 142 can include a single or integrally raised region that projects from the mounting flange 140. Alternatively, the cover 70 can include a separate assembly mounted to the electrode section 138, and in this case can include a position for automatically positioning the cover 70 relative to the central opening 130 in the workpiece holder 6 Pin (not shown) or the like. When the workpiece holder 60 is lowered to the process position, the workpiece 3 is in contact with the top surface 144 of the bracket portion 142 from the workpiece ring 68 to the carrier portion Μ: the workpiece 30 is transferred. The transfer of the workpiece 30 is accomplished without any structure that guides the workpiece 3 to the carrier portion 142 on the bracket portion 142, the lower electrode 24, or the base 16 of the enclosure 12. In the lowered process position of the workpiece holder 6 ,, the top surface 134 of the workpiece ring 68 is slightly recessed below the top surface 144 of the bracket portion 142. During the plasma processing, the workpiece 3 is stopped on the top surface 144 of the carrier portion μ?. Electrode section 138 and lift plate 66 are constructed from an electrical conductor, such as aluminum. The cap 72 and the workpiece ring 68 on the cover 70 are constructed of an electrical insulator or dielectric, such as alumina or high purity alumina. Alternatively, the cap 72 and the workpiece ring 68 on the cover 7 can also be constructed from an electrical conductor, such as aluminum. The selection of the material of the cap 72 of the cover plate 70 and the workpiece ring 68 is dictated by the type of plasma 131725.doc 200905777 required for the particular plasma process of the workpiece 3 in the plasma processing system 10. Referring to Figures 3A and 4, one of the pusher members 64 is spatially located adjacent each of the inner corners 15 of the split ring 26, apparently adjacent each of the corresponding outer corners (not shown) of the upper electrode 22. Each of the pushers 64 includes a pusher block 150 that is secured to the upper electrode 22 by an insert 152 and a shoulder bolt 154 in cooperation with a magazine element 156. Each of the pusher blocks 15A has a substantially superposed relationship with one of the touch blocks 1〇2. One end of the spring element 156, which may be in the form of a compression spring formed by a spiral coil, is captured between the enlarged head 158 and the upper electrode 22. The pusher block 15 is constructed of an insulating or dielectric material, such as ceramic, and the insert 152 and shoulder bolt 154 may be formed from a metal, such as stainless steel. The shoulder bolt 154 has a threaded tip that is fastened to one of the threaded bolt holes in the upper electrode 22. The pusher block 150 of each pusher 64 can be positioned relative to the shoulder bolt 154 between a first position in which the spring element 156 extends (Fig. 4) and a second position in which the spring element 156 is compressed (Fig. 5) mobile. Spring element 156 supplies a preload bias to each pusher block 150 in the first position. As the cover 14 moves toward the base 16, the pusher block 15A of each of the pushers 64 contacts the top surface 134 of the workpiece ring 68 and the magazine element 156 begins to compress. As the cover 4 approaches the base 16, the spring element is further reduced, which applies an increased force to the workpiece ring 68, thereby causing the workpiece clamp 6 〇 toward the top surface 144 of the bracket portion 142 and toward the lower electrode mobile. When the workpiece holder 60 is in the fully lowered position, the tapered outer side wall 114 of each of the contact blocks 1 〇 2 contacts the flared rim 9 of the recess 76 and each pusher 131725.doc 18 200905777 block 150 Both move to their second position.

The angle of inclination of the flared rim 90 and the tapered outer sidewall 114 are approximately equal or matched. When the workpiece holder 60 is in the lowered position, each of the flared rims 9A is in contact with a corresponding one of the outer side walls 114. This contact causes each of the contact blocks 102 to automatically self-center within their respective recesses 76. Thus, each time the cover 14 is lowered, the workpiece holder 60 is returned to a reproducible spatial position relative to the lower electrode 24 and the movable electrode section 138 as the cover 14 moves the workpiece holder 6 to the lowered position. Again, this provides a reproducible position for the continuous workpiece 30 on the carriage portion 142 during each sequential plasma processing. Referring to Figures 3, 3A, 7, 8A and 8B, wherein like reference numerals designate like features, and in accordance with an embodiment of the invention, the plasma processing system 1 further includes a sacrificial ring, generally designated by reference numeral 16 Instructed. When the lower surface 29 of the workpiece 30 is supported on the top surface 144 of the bracket portion 142, the sacrificial ring 160 extends circumferentially around an outer peripheral edge 31 which surrounds the workpiece 3 in a concentric relationship with the workpiece 30. long. The sacrificial ring 160 includes a body 61 that is supported by a first section of a curved shoulder 164 that is mounted to the lift plate 66 of the workpiece ring 68 and a shoulder that is mounted to the support member 74 of the cover 70. The second section of μ is composed of 17〇. The first section 68 includes an arc having an arc length greater than the arc represented by the second section 17A. The curved shoulder 164 defined in the lift plate 66 of the workpiece ring 68 coaxially surrounds the central opening 130 and terminates at the intersection with the side walls η], 135 located on the side of the gap 132. The curved shoulder 164 leading to the central opening (10) is recessed relative to the top surface 92 of the workpiece ring 68. The curved shoulder 166 defined in the support member of the cover 7 is placed with the shoulder 164 and 131725.doc -19. 200905777 to geometrically close a completely circular object when the workpiece holder 60 is in the lowered position. The shoulders 166 leading to the central opening 13 凹 are recessed relative to the top surface 136 of the cover plate 70. The sections 168, 170 of the sacrificial ring 16 can be engaged with the lift plate by means of pin-pins 172, 174, respectively. The first section 168 of the sacrificial ring 160 includes a ridge 176 and a shoulder or rim 78 disposed radially inside the ridge 176. The ridge 176 of the first section 168 is at the rim 178. The upper portion protrudes so that the top surface of the workpiece 3〇 contacting the workpiece 3 and the peripheral edge 31 of the low surface 27, 29 are above the rim 178 and radially disposed inside the ridge 176. Similarly, the second section of the sacrificial ring 160 170 includes a ridge 18〇 and a shoulder or rim 182 radially disposed within the ridge 180. The ridge 180 of the second section 17 projects above the rim 182 such that the peripheral edge 31 of the workpiece 3 is at the rim The upper surface of the 182 and the radial female are placed inside the rim 82. The segments Mg, pi) may each be formed of a plurality of material segments ( That is, a narrow segment having an inner edge having a larger radius of curvature on a wide segment having an inner edge having a smaller radius of curvature, or alternatively, a single intact material slicer Machining or molding. The radial dimension or width of the rim 178 is selected such that the rim 178 only contacts the low surface 29 and extends around the peripheral edge 31 of the workpiece 3G - the thin annular surface area is in contact with The width can be - the peripheral edge 3 of the self-defense member 3! The radially inward is approximately equal to the torus extending 3 mm. The diameter of the central opening 130 in the lifting plate is approximately equal to the diameter of the workpiece 3 minus the rim 178, Radial dimensions of 182. Preferably, as shown in Fig. 8A, when the workpiece holder 60 is in the lowered process position], the ridges 176, 180 such as the rim 178, ^ 8 182 - like a substantially continuous ring of love 131725.doc -20. 200905777 The shapes are aligned with each other. In the case where the workpiece holder 60 is in its table height condition, the relationship between the sections 168 and 7〇 is shown, and in the case where the workpiece holder is in its lowered condition, the cover 14 is closed and the workpiece 3 is ready to be processed. The relationship between segments 168 and 170 is shown in Figure 8B. The alignment of the ridges 176, 18〇 as the workpiece holder 60 is lowered defines a substantially continuous material loop having a radially outwardly effective outwardly varying outer edge of the workpiece 3G toward the outer diameter of the sacrificial ring 16〇. The radial dimension of the position. The ridges 176, 18 〇 surface "the adjacent top surface of the workpiece 3 大致 is substantially coplanar. The relationship between the sacrificial ring 16 〇 and the workpiece 3 在 when the workpiece holder 6 〇 is in its lowered position. A sacrificial ring 16 约为 about 1 mm wide is formed of a consumable material in the «to the electric material. The consumable material may be composed of an organic polymer or a workpiece similar to the workpiece 30 to be plasma-engraved. It is composed of another material (ie, 'Shi Xi'). Suitable organic polymers may include, but are not limited to, polyetheretherketone (PEEK), polyimine and polyamine or ruthenium. Sacrifice ring 1 60 can be buried MΛ u , S help ..., ''" The technology familiar to this technology is made of this type of material. = For example, the electropolymerization system is used for electropolymerization. From the workpiece % stripper, the organic polymer may be a material of the composition of the sacrificial ring 16 。. In this case, when the material of the sacrificial ring 160 is composed, the sacrificial ring 16 may be: 20% _ ^ b 士才科 I I is relatively volatile and because: easy:: vacuum Lipu Μ self-processing area café empty contact It was therefore negligible ⑽ apart from the sacrificial ring engraved in the assembly 13 and the side of the vacuum surrounding 131725.doc 200905777 W of the wall (comprising the workpiece 30 itself) on the contaminants or residue.

The radial dimensions of the ridges 176, 180 are selected to optimize the variation in the effective position of the peripheral edge of the workpiece 3〇. In other words, the workpiece 3 presents a larger effective diameter to the electropolymer to etch the sacrificial ring 160 from the inherent region of the workpiece edge effect having a relatively high etch rate, rather than the workpiece 30 at its peripheral rim. The plasma processing uniformity across the workpiece 30 is thus improved as the higher etch rate is radially outward and away from the workpiece 30. When the system 1 is used to generate plasma and treat the top surface 27 of the workpiece 30, the ridges 176, 18 are exposed to the plasma in the processing zone 28. In general, the sacrificial ring 160 has a toroidal geometry characterized by an inner diameter that is approximately equal to the outer diameter of one of the peripheral edges 3 of the workpiece 3〇. The difference between the inner diameter of the sacrificial ring 160 and the outer diameter defines its effectiveness.

The radial dimension D sacrificial ring 160 can be used to vary the edge effects inherent in plasma processing from the peripheral edge 31 of the workpiece 3 to the perimeter 162 of the sacrificial ring 16 . With this mechanism and although not wishing to be bound by theory, it is believed that the sacrificial ring 16G operates by sacrificing its own uniform processing when the preferred edge effect increases during the electropolymerization process primarily at the (four) rate of the I consuming material of the sacrificial ring (10). Degree to alleviate: moderate the edge effect of the workpiece at the periphery. Thus, the rate across the workpiece is more uniform, due to the smaller etch rate change between the center of the workpiece 30 and the peripheral edge region. Effect: There is a fine balance in maintaining the position of the peripheral edge of the workpiece 3〇: the life of the ring 160 can be determined by its constituent materials and plasma process. Sacrifice ring 60 can be replaced as needed, because it can eliminate 131725.doc *22· 200905777 components. Sacrificial ring 160 is shown for use in a wafer level application. (eg, plasma etching, photoresist stripping or cleaning, kneading: plasma processing activation, and thin film deposition) is simple and θ clean, surface across the wafer. The sacrificial ring 160 can be constructed without significantly increasing the cost and cost of the plasma. In addition, the sacrificial ring 160 can be used to improve the uniformity of the first 10, without the need for time consuming or expensive etching:: plasma preparation. The plasma processing system can be simple and inexpensive for more than 5 minutes. ( ί 八 新, and right broadcast ring 160 solves the problem caused by edge effects (4) - there is no problem with hungry + J. The article is by way of example rather than display References to terms (eg, "vertical", "horizontal", etc.) are used to create a three-dimensional reference frame. The term "horizontal" as used herein is defined as - and - in the opposite surface containing electrodes 22, 24. The orientation of one plane is roughly parallel. The term "vertical" refers to a direction perpendicular to the level I just defined. For example, "upper", "lower", "on" (four), " Above (ab〇Ve), "below", "side" (as in "sidewall"))"""higher", "lower" Terms such as "above (ο·), "beneath", and "under" are defined relative to the horizontal plane. It is to be understood that the reference frame defined by those skilled in the art is to be construed as being limited to the scope of the invention, and various other reference frames may be employed without departing from the spirit and scope of the invention. Although the present invention has been illustrated by the various embodiments described, and although the embodiments have been described in considerable detail, the applicant's intent is not to limit the scope of the application of the invention to the <RTI ID=0.0>>; + 』 The time limit is limited to this detail in any way. Mature Life This technology will clearly highlight additional benefits and modifications. The invention in its broader aspects is not limited to the particular details shown and described. Because (4) deviate from these details, it does not deviate from the spirit and scope of the general inventive concept of the applicant. The scope of the invention will be defined solely by the scope of the accompanying claims. [Simple description of the map]

The present invention is hereby incorporated by reference to the same as The principle of the embodiment. Figure 1 is a perspective view of a plasma processing system including a vacuum enclosure and a wafer lift mechanism disposed within the vacuum enclosure. 2 is a front elevational view of the plasma processing system of FIG. 1. Figure 3 is an exploded view of the shroud and wafer lift mechanism of the plasma processing system of Figures 1 and 2. Figure 3A is another exploded view of the vertical lift __ of the power handling system of Figures 2 and 3. Figure 4 is a cross-sectional view taken generally along line 4-4 of Figure 2 with the wafer lift mechanism placed in a raised position relative to the base of the vacuum enclosure and the lid of the vacuum envelope opened. Figure 5 is a cross-sectional view similar to Figure 4 in which the cover of the vacuum enclosure is in contact with the base of the true enclosure and the wafer lift mechanism is thereby placed in a lowered position. Figure 6 is an enlarged view of a portion of Figure 4. Figure 7 is an exploded view of a portion of the wafer lift mechanism of Figures 1-6. 131725.doc 24 - 200905777 Figure 8A depicts a perspective view of a wafer lift mechanism in an elevated condition, with only a portion of the wafer lift mechanism illustrated for clarity of illustration. Figure SB is a perspective view of a lifting mechanism similar to that depicted in Figure 8A. [Main component symbol description] Raised wafer 10 12 14 Plasma processing system Vacuum vessel or enclosure cover 15 16 18 20 22 24 26 27 28 29 30 31 32 33 34 Inner corner base support arm support arm Upper electrode lower electrode separation ring top surface treatment area low surface workpiece outer peripheral edge power transmission line transmission line 131725.doc • 25· 200905777 36 vacuum pump 38 vacuum manifold 40 sealing member 42 sealing member 43 conductive member 44 air inlet plate 46 gas埠48 conveyor line 50 source gas supply 52 microprocessor based controller 54 pipe fitting 55 coolant supply 56 air gap 58 vertical lifting mechanism 60 workpiece holder 62 resiliently biased support member 64 resiliently biased pushing device 65 Circumference 66 Lifting plate 68 Workpiece ring 70 Cover 72 Cap 74 Support 76 Notch 131725.doc -26- 200905777 78 Base 80 Mounting post 82 Opening 84 Threaded tip 86 Guide pin 88 Side wall 90 Flared rim 92 Top surface 94 generally cylindrical, unthreaded shank 96 head 98 recessed feature 100 flared surface 102 Block 106 enlargement head 108 center 膛 or passage 110 edge or lip 112 beveled or tapered outer side wall 114 beveled or tapered outer side wall 116 generally cylindrical surface 118 generally cylindrical surface 120 flared recess 122 sloped Surface 124 Spring Element 130 Center Opening 131725.doc -27- 200905777 132 Clearance 133 Sidewall 134 Top Surface 135 Sidewall 136 Top Surface 138 Electrode Section 140 Mounting Flange 142 Bracket Section. 144 Top Surface \ ! 150 Pusher Block 152 Insert 154 shoulder bolt 156 spring element 158 enlarged head 162 circumference 164 curved shoulder u 166 shoulder 168 section 170 section 172 pin 174 lock 176 ridge 178 shoulder or rim 180 ridge 182 shoulder or rim 131725.doc -28

Claims (1)

200905777 X. Patent Application Range: 1. A device for plasma processing a workpiece having an outer peripheral edge, the device comprising: a sacrificial body composed of a plasma removable material, the sacrificial body being suitable for The outer peripheral edge of the workpiece is disposed to effectively increase the external force of the workpiece. 2. The device of claim 1, wherein the sacrificial body comprises a plurality of segments configured to have a circular geometry when placed in a juxtaposed relationship, the plurality of segments being configured to be concentric with the workpiece Configuration. 3. As claimed in the apparatus, wherein the sacrificial system consists of an organic polymer 0 "• • 兮 兮 聚醚 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Or polyamine 5:: The device of item 1, wherein the sacrificial system consists of - a composition similar to the composition of the workpiece - the material of the material exposed to the portion of the plasma 6. As requested! The device, the sacrificial n ^ ^ J garment geometry and - near (four) outside the outer peripheral edge of the member (four) inner diameter. 7· - Kind for electric power treatment - One has one outer peripheral connection, the first one is the wall ^ Tian Cheng outer peripheral side includes: 忏炙褒 ,, the installation #工图 soap into the name A - eDonkey, The vacuum enclosure includes - a surface adapted to contact and support the workpiece when the surface of the first ear cover envelope of the workpiece is exposed to the plasma - the first surface of the a support bracket; and 131725.doc 200905777 a sacrificial body' consisting of an electro-polymerizable removable material extending around the outer peripheral edge of the jade member supported on the bracket to effectively add the bracket The outer diameter of the workpiece. 8. The method of claim 7, wherein the sacrificial body comprises a plurality of segments configured to have a circular geometry when placed in a self-laying manner, the plurality of segments being configured to be associated with the workpiece Configure it concentrically. 9. The device of claim 8, further comprising: a wafer lifting mechanism disposed inside the vacuum enclosure, the wafer material mechanism comprising - the wafer holder - and the wafer The first position of the workpiece holding the workpiece in a non-contact relationship with the wafer holder in which the wafer holder moves between the second first position of the workpiece in contact with the support bracket And the first segment of the sacrificial body is carried by the wafer holder. 10. The device of claim 9, wherein the second segment is mounted adjacent to the support bracket and the second segment is secured when the wafer holder moves between the first and second positions of. 11. The device of claim 7, wherein the sacrificial system consists of an organic polymer. 12. The device of the invention, wherein the organic polymer is polyetheretherketone (PEEK), polyimine or polyamine. 13. The device of claim 7, wherein the sacrificial system is comprised of a material that is similar in composition to a material that forms part of the workpiece that is exposed to the plasma. Shi. The apparatus of month 7 wherein the sacrificial body has an annular geometry 131725.doc 200905777 and an inner diameter approximately equal to the outer diameter of the outer peripheral edge of the workpiece. 15. A method for electrical etching - having a first surface, a second surface, and a guard attached to an outer peripheral edge of the first and second surfaces, the method comprising: surrounding the workpiece The peripheral edge is provided with a sacrificial body composed of a plasma removable material; 'the first surface of the workpiece and the sacrificial body are exposed to a plasma; and the maximum button rate is from the workpiece The last position of the 帛-^ changes C1 to a different position on the victim. The method of claim 15, further comprising: supporting the first surface of the workpiece during a etch process on a support bracket that is internal to a vacuum enclosure that limits the plasma. 17. The method of claim 15 wherein the sacrificial body is divided into a plurality of segments defining a domed geometry when aligned, and further comprising: temporarily supporting the workpiece in a crystal disposed within the vacuum enclosure Moving the wafer lifting mechanism to transfer the workpiece from the wafer lifting mechanism to the support bracket; and transferring at least one of the sections of the sacrificial body when the workpiece is transferred A person is aligned with at least one of the segments of the sacrificial body to define a substantially continuous annular geometry. 18. The method of claim 17, further comprising: supporting the workpiece to the support when the first surface of the workpiece is etched. 131725.doc 200905777. 19. The method of claim 15, further comprising: The material of the sacrificial body is etched by exposure to the plasma; and the sacrificial body is replaced with another sacrificial body after the sacrificial body is sufficiently etched. C I 131725.doc