TW200905777A - Apparatus and methods for improving treatment uniformity in a plasma process - Google Patents
Apparatus and methods for improving treatment uniformity in a plasma process Download PDFInfo
- Publication number
- TW200905777A TW200905777A TW097120323A TW97120323A TW200905777A TW 200905777 A TW200905777 A TW 200905777A TW 097120323 A TW097120323 A TW 097120323A TW 97120323 A TW97120323 A TW 97120323A TW 200905777 A TW200905777 A TW 200905777A
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- plasma
- sacrificial
- sacrificial body
- peripheral edge
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000008569 process Effects 0.000 title claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims description 18
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920000768 polyamine Polymers 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000010977 jade Substances 0.000 claims 1
- 239000000344 soap Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000007789 sealing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 238000003754 machining Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 206010035148 Plague Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94151807P | 2007-06-01 | 2007-06-01 | |
| US12/125,335 US20080296261A1 (en) | 2007-06-01 | 2008-05-22 | Apparatus and methods for improving treatment uniformity in a plasma process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200905777A true TW200905777A (en) | 2009-02-01 |
Family
ID=40086939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097120323A TW200905777A (en) | 2007-06-01 | 2008-05-30 | Apparatus and methods for improving treatment uniformity in a plasma process |
Country Status (7)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101506066B (zh) | 2006-08-22 | 2012-11-28 | 诺信公司 | 用于在处理系统中处理工件的设备和方法 |
| US8372238B2 (en) | 2008-05-20 | 2013-02-12 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
| WO2009152378A1 (en) * | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Formation of solar cell-selective emitter using implant and anneal method |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US9324598B2 (en) | 2011-11-08 | 2016-04-26 | Intevac, Inc. | Substrate processing system and method |
| CN103165374B (zh) * | 2011-12-08 | 2017-05-10 | 中微半导体设备(上海)有限公司 | 一种等离子体处理装置及应用于等离子处理装置的边缘环 |
| US9385017B2 (en) * | 2012-08-06 | 2016-07-05 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
| US9318332B2 (en) | 2012-12-19 | 2016-04-19 | Intevac, Inc. | Grid for plasma ion implant |
| CN112673450B (zh) * | 2018-07-30 | 2024-06-11 | 诺信公司 | 用于利用等离子体的工件加工的系统 |
| CN113035680B (zh) * | 2019-12-24 | 2024-06-14 | 中微半导体设备(上海)股份有限公司 | 用于真空设备的调平机构和等离子体处理装置 |
| CN111180370A (zh) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | 晶圆承载托盘及半导体加工设备 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
| JPH0373524A (ja) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | エッチング方法 |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US20010049196A1 (en) * | 1997-09-09 | 2001-12-06 | Roger Patrick | Apparatus for improving etch uniformity and methods therefor |
| US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
| US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
| DE29813326U1 (de) * | 1998-07-29 | 1998-12-10 | PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf | Verbesserte Vorrichtung zum Schutz von elektrostatischen Haltesystemen in Anlagen zur Bearbeitung von Wafern |
| JP2000299305A (ja) * | 1999-04-16 | 2000-10-24 | Toshiba Corp | プラズマ処理装置 |
| US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| JP2003100713A (ja) * | 2001-09-26 | 2003-04-04 | Kawasaki Microelectronics Kk | プラズマ電極用カバー |
| US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
| KR100610010B1 (ko) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | 반도체 식각 장치 |
| KR100674922B1 (ko) * | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치 |
| CN101506066B (zh) * | 2006-08-22 | 2012-11-28 | 诺信公司 | 用于在处理系统中处理工件的设备和方法 |
-
2008
- 2008-05-22 US US12/125,335 patent/US20080296261A1/en not_active Abandoned
- 2008-05-23 WO PCT/US2008/064670 patent/WO2008150739A1/en active Application Filing
- 2008-05-23 CN CN2008800184440A patent/CN101681785B/zh not_active Expired - Fee Related
- 2008-05-23 DE DE112008001482T patent/DE112008001482T5/de not_active Withdrawn
- 2008-05-23 JP JP2010510438A patent/JP2010529656A/ja active Pending
- 2008-05-23 KR KR1020097024756A patent/KR20100025515A/ko not_active Withdrawn
- 2008-05-30 TW TW097120323A patent/TW200905777A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE112008001482T5 (de) | 2010-04-29 |
| KR20100025515A (ko) | 2010-03-09 |
| JP2010529656A (ja) | 2010-08-26 |
| US20080296261A1 (en) | 2008-12-04 |
| WO2008150739A1 (en) | 2008-12-11 |
| CN101681785A (zh) | 2010-03-24 |
| CN101681785B (zh) | 2012-05-09 |
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