KR20090092770A - 전계 방출 장치 - Google Patents
전계 방출 장치Info
- Publication number
- KR20090092770A KR20090092770A KR1020097009979A KR20097009979A KR20090092770A KR 20090092770 A KR20090092770 A KR 20090092770A KR 1020097009979 A KR1020097009979 A KR 1020097009979A KR 20097009979 A KR20097009979 A KR 20097009979A KR 20090092770 A KR20090092770 A KR 20090092770A
- Authority
- KR
- South Korea
- Prior art keywords
- field emission
- emission device
- anode
- atoms
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims description 40
- 125000004429 atom Chemical group 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229920003023 plastic Polymers 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920000767 polyaniline Polymers 0.000 claims description 4
- -1 polyphenylene Polymers 0.000 claims description 4
- 229920000128 polypyrrole Polymers 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 150000001721 carbon Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 claims description 2
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000002114 nanocomposite Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910003445 palladium oxide Inorganic materials 0.000 claims description 2
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229920002994 synthetic fiber Polymers 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000012466 permeate Substances 0.000 claims 1
- 239000010419 fine particle Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 4
- 239000010405 anode material Substances 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Gas-Filled Discharge Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006054206.1 | 2006-11-15 | ||
| DE102006054206A DE102006054206A1 (de) | 2006-11-15 | 2006-11-15 | Feldemissionsvorrichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090092770A true KR20090092770A (ko) | 2009-09-01 |
Family
ID=39311228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097009979A Withdrawn KR20090092770A (ko) | 2006-11-15 | 2007-11-15 | 전계 방출 장치 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20100052511A1 (enExample) |
| EP (1) | EP2092542B1 (enExample) |
| JP (1) | JP2010509740A (enExample) |
| KR (1) | KR20090092770A (enExample) |
| CN (1) | CN101663724A (enExample) |
| AT (1) | ATE455358T1 (enExample) |
| CA (1) | CA2667653A1 (enExample) |
| DE (2) | DE102006054206A1 (enExample) |
| WO (1) | WO2008058527A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9224851B2 (en) | 2011-10-14 | 2015-12-29 | Diftek Lasers, Inc. | Planarized semiconductor particles positioned on a substrate |
| US9209019B2 (en) | 2013-09-05 | 2015-12-08 | Diftek Lasers, Inc. | Method and system for manufacturing a semi-conducting backplane |
| US9455307B2 (en) | 2011-10-14 | 2016-09-27 | Diftek Lasers, Inc. | Active matrix electro-optical device and method of making thereof |
| US10312310B2 (en) | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| EP3933881A1 (en) | 2020-06-30 | 2022-01-05 | VEC Imaging GmbH & Co. KG | X-ray source with multiple grids |
| US12230468B2 (en) | 2022-06-30 | 2025-02-18 | Varex Imaging Corporation | X-ray system with field emitters and arc protection |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276576A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 注入型発光素子 |
| US4818914A (en) * | 1987-07-17 | 1989-04-04 | Sri International | High efficiency lamp |
| GB2235819A (en) * | 1989-08-12 | 1991-03-13 | Cathodeon Ltd | Gas discharge display device |
| US5126574A (en) * | 1989-10-10 | 1992-06-30 | The United States Of America As Represented By The Secretary Of Commerce | Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication |
| JPH04315750A (ja) * | 1991-01-10 | 1992-11-06 | Nec Corp | 薄膜トランジスタ制御型蛍光表示パネル |
| US5515234A (en) * | 1993-06-30 | 1996-05-07 | Texas Instruments Incorporated | Antistatic protector and method |
| DE4405768A1 (de) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung |
| USRE38561E1 (en) * | 1995-02-22 | 2004-08-03 | Till Keesmann | Field emission cathode |
| US5667724A (en) * | 1996-05-13 | 1997-09-16 | Motorola | Phosphor and method of making same |
| US5785873A (en) * | 1996-06-24 | 1998-07-28 | Industrial Technology Research Institute | Low cost field emission based print head and method of making |
| US5882533A (en) * | 1996-07-15 | 1999-03-16 | Industrial Technology Research Institute | Field emission based print head |
| DE69919242T2 (de) * | 1998-02-12 | 2005-08-11 | Canon K.K. | Verfahren zur Herstellung eines elektronenemittierenden Elementes, Elektronenquelle und Bilderzeugungsgerätes |
| FR2789223B1 (fr) * | 1999-01-29 | 2001-03-23 | Univ Nantes | Corps de cathode ferroelectrique pour la production d'electrons |
| US6207578B1 (en) * | 1999-02-19 | 2001-03-27 | Micron Technology, Inc. | Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays |
| JP4010077B2 (ja) * | 1999-07-06 | 2007-11-21 | ソニー株式会社 | 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法 |
| US6342755B1 (en) * | 1999-08-11 | 2002-01-29 | Sony Corporation | Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles |
| KR100480768B1 (ko) * | 1999-12-23 | 2005-04-06 | 삼성에스디아이 주식회사 | 전도성 발광물질을 이용한 저전압 구동용 적색 형광체 및그 제조방법 |
| JP2001236026A (ja) * | 2000-02-21 | 2001-08-31 | Ricoh Co Ltd | 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子 |
| JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
| KR20020049630A (ko) * | 2000-12-19 | 2002-06-26 | 임지순 | 전계방출 에미터 |
| US7112366B2 (en) * | 2001-01-05 | 2006-09-26 | The Ohio State University | Chemical monolayer and micro-electronic junctions and devices containing same |
| JP2003115255A (ja) * | 2001-10-04 | 2003-04-18 | Kazuyuki Taji | 電界電子放出電極およびその製造方法 |
| KR20030060611A (ko) * | 2002-01-10 | 2003-07-16 | 삼성전자주식회사 | 보호막을 가지는 탄소나노튜브를 구비하는 전계방출소자 |
| US6852554B2 (en) * | 2002-02-27 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Emission layer formed by rapid thermal formation process |
| US6787792B2 (en) * | 2002-04-18 | 2004-09-07 | Hewlett-Packard Development Company, L.P. | Emitter with filled zeolite emission layer |
| JP2004241292A (ja) * | 2003-02-07 | 2004-08-26 | Sony Corp | 冷陰極電界電子放出表示装置 |
| CN1287413C (zh) * | 2003-03-26 | 2006-11-29 | 清华大学 | 一种场发射显示器 |
| KR100551229B1 (ko) * | 2003-06-26 | 2006-02-10 | 주식회사 디피아이 솔루션스 | 디스플레이용 유기 투명 전극의 제조방법 |
| US7201627B2 (en) * | 2003-07-31 | 2007-04-10 | Semiconductor Energy Laboratory, Co., Ltd. | Method for manufacturing ultrafine carbon fiber and field emission element |
| CN1333013C (zh) * | 2004-12-15 | 2007-08-22 | 中国科学院化学研究所 | 导电聚苯胺与碳纳米管复合的电磁屏蔽复合膜及其制法 |
| JP2006297549A (ja) * | 2005-04-21 | 2006-11-02 | Keio Gijuku | 金属ナノ粒子の配列蒸着方法及び金属ナノ粒子を用いたカーボンナノチューブの成長方法 |
-
2006
- 2006-11-15 DE DE102006054206A patent/DE102006054206A1/de not_active Ceased
-
2007
- 2007-11-15 KR KR1020097009979A patent/KR20090092770A/ko not_active Withdrawn
- 2007-11-15 JP JP2009536600A patent/JP2010509740A/ja active Pending
- 2007-11-15 CA CA002667653A patent/CA2667653A1/en not_active Abandoned
- 2007-11-15 EP EP07846340A patent/EP2092542B1/de not_active Not-in-force
- 2007-11-15 AT AT07846340T patent/ATE455358T1/de active
- 2007-11-15 US US12/514,765 patent/US20100052511A1/en not_active Abandoned
- 2007-11-15 CN CN200780042058A patent/CN101663724A/zh active Pending
- 2007-11-15 WO PCT/DE2007/002065 patent/WO2008058527A2/de not_active Ceased
- 2007-11-15 DE DE502007002648T patent/DE502007002648D1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101663724A (zh) | 2010-03-03 |
| EP2092542B1 (de) | 2010-01-13 |
| JP2010509740A (ja) | 2010-03-25 |
| DE102006054206A1 (de) | 2008-05-21 |
| DE502007002648D1 (de) | 2010-03-04 |
| US20100052511A1 (en) | 2010-03-04 |
| CA2667653A1 (en) | 2008-05-22 |
| WO2008058527A3 (de) | 2008-10-16 |
| ATE455358T1 (de) | 2010-01-15 |
| EP2092542A2 (de) | 2009-08-26 |
| WO2008058527A2 (de) | 2008-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20090515 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |