DE102006054206A1 - Feldemissionsvorrichtung - Google Patents

Feldemissionsvorrichtung Download PDF

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Publication number
DE102006054206A1
DE102006054206A1 DE102006054206A DE102006054206A DE102006054206A1 DE 102006054206 A1 DE102006054206 A1 DE 102006054206A1 DE 102006054206 A DE102006054206 A DE 102006054206A DE 102006054206 A DE102006054206 A DE 102006054206A DE 102006054206 A1 DE102006054206 A1 DE 102006054206A1
Authority
DE
Germany
Prior art keywords
atoms
anode
arrangement
field emission
molecules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102006054206A
Other languages
German (de)
English (en)
Inventor
Till Keesmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE102006054206A priority Critical patent/DE102006054206A1/de
Priority to DE502007002648T priority patent/DE502007002648D1/de
Priority to CN200780042058A priority patent/CN101663724A/zh
Priority to EP07846340A priority patent/EP2092542B1/de
Priority to KR1020097009979A priority patent/KR20090092770A/ko
Priority to JP2009536600A priority patent/JP2010509740A/ja
Priority to PCT/DE2007/002065 priority patent/WO2008058527A2/de
Priority to CA002667653A priority patent/CA2667653A1/en
Priority to US12/514,765 priority patent/US20100052511A1/en
Priority to AT07846340T priority patent/ATE455358T1/de
Publication of DE102006054206A1 publication Critical patent/DE102006054206A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Gas-Filled Discharge Tubes (AREA)
DE102006054206A 2006-11-15 2006-11-15 Feldemissionsvorrichtung Ceased DE102006054206A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102006054206A DE102006054206A1 (de) 2006-11-15 2006-11-15 Feldemissionsvorrichtung
DE502007002648T DE502007002648D1 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung
CN200780042058A CN101663724A (zh) 2006-11-15 2007-11-15 场致发射装置
EP07846340A EP2092542B1 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung
KR1020097009979A KR20090092770A (ko) 2006-11-15 2007-11-15 전계 방출 장치
JP2009536600A JP2010509740A (ja) 2006-11-15 2007-11-15 電界放出装置
PCT/DE2007/002065 WO2008058527A2 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung
CA002667653A CA2667653A1 (en) 2006-11-15 2007-11-15 Field emission device
US12/514,765 US20100052511A1 (en) 2006-11-15 2007-11-15 Field emission device
AT07846340T ATE455358T1 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006054206A DE102006054206A1 (de) 2006-11-15 2006-11-15 Feldemissionsvorrichtung

Publications (1)

Publication Number Publication Date
DE102006054206A1 true DE102006054206A1 (de) 2008-05-21

Family

ID=39311228

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102006054206A Ceased DE102006054206A1 (de) 2006-11-15 2006-11-15 Feldemissionsvorrichtung
DE502007002648T Active DE502007002648D1 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502007002648T Active DE502007002648D1 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung

Country Status (9)

Country Link
US (1) US20100052511A1 (enExample)
EP (1) EP2092542B1 (enExample)
JP (1) JP2010509740A (enExample)
KR (1) KR20090092770A (enExample)
CN (1) CN101663724A (enExample)
AT (1) ATE455358T1 (enExample)
CA (1) CA2667653A1 (enExample)
DE (2) DE102006054206A1 (enExample)
WO (1) WO2008058527A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6084226B2 (ja) 2011-10-14 2017-02-22 ディフテック レーザーズ インコーポレイテッド 基板上に位置付けられる平坦化された半導体粒子
US9455307B2 (en) 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids
US12230468B2 (en) 2022-06-30 2025-02-18 Varex Imaging Corporation X-ray system with field emitters and arc protection

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
US6342755B1 (en) * 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
US20020022374A1 (en) * 1999-02-19 2002-02-21 Yang Jianping P. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
DE10122602A1 (de) * 2000-12-19 2002-07-04 Jisoon Ihm Emitterstruktur für Feldemissionsanzeige
EP1328001A1 (en) * 2002-01-10 2003-07-16 Samsung Electronics Co., Ltd. Field emitter device comprising carbon nanotube having protective membrane
US20040036402A1 (en) * 1994-02-23 2004-02-26 Till Keesmann Field emission cathode using carbon fibers
US20040189182A1 (en) * 2003-03-26 2004-09-30 Liang Liu Carbon nanotube-based field emission display
US7019449B2 (en) * 2001-01-05 2006-03-28 The Ohio State University Chemical monolayer field emitter device
US7201627B2 (en) * 2003-07-31 2007-04-10 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing ultrafine carbon fiber and field emission element

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Publication number Priority date Publication date Assignee Title
JPS6276576A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 注入型発光素子
US4818914A (en) * 1987-07-17 1989-04-04 Sri International High efficiency lamp
GB2235819A (en) * 1989-08-12 1991-03-13 Cathodeon Ltd Gas discharge display device
JPH04315750A (ja) * 1991-01-10 1992-11-06 Nec Corp 薄膜トランジスタ制御型蛍光表示パネル
US5515234A (en) * 1993-06-30 1996-05-07 Texas Instruments Incorporated Antistatic protector and method
USRE38561E1 (en) * 1995-02-22 2004-08-03 Till Keesmann Field emission cathode
US5667724A (en) * 1996-05-13 1997-09-16 Motorola Phosphor and method of making same
US5785873A (en) * 1996-06-24 1998-07-28 Industrial Technology Research Institute Low cost field emission based print head and method of making
US5882533A (en) * 1996-07-15 1999-03-16 Industrial Technology Research Institute Field emission based print head
DE69919242T2 (de) * 1998-02-12 2005-08-11 Canon K.K. Verfahren zur Herstellung eines elektronenemittierenden Elementes, Elektronenquelle und Bilderzeugungsgerätes
FR2789223B1 (fr) * 1999-01-29 2001-03-23 Univ Nantes Corps de cathode ferroelectrique pour la production d'electrons
JP4010077B2 (ja) * 1999-07-06 2007-11-21 ソニー株式会社 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
KR100480768B1 (ko) * 1999-12-23 2005-04-06 삼성에스디아이 주식회사 전도성 발광물질을 이용한 저전압 구동용 적색 형광체 및그 제조방법
JP2001236026A (ja) * 2000-02-21 2001-08-31 Ricoh Co Ltd 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
JP2003115255A (ja) * 2001-10-04 2003-04-18 Kazuyuki Taji 電界電子放出電極およびその製造方法
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6787792B2 (en) * 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
JP2004241292A (ja) * 2003-02-07 2004-08-26 Sony Corp 冷陰極電界電子放出表示装置
KR100551229B1 (ko) * 2003-06-26 2006-02-10 주식회사 디피아이 솔루션스 디스플레이용 유기 투명 전극의 제조방법
CN1333013C (zh) * 2004-12-15 2007-08-22 中国科学院化学研究所 导电聚苯胺与碳纳米管复合的电磁屏蔽复合膜及其制法
JP2006297549A (ja) * 2005-04-21 2006-11-02 Keio Gijuku 金属ナノ粒子の配列蒸着方法及び金属ナノ粒子を用いたカーボンナノチューブの成長方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
US20040036402A1 (en) * 1994-02-23 2004-02-26 Till Keesmann Field emission cathode using carbon fibers
US20020022374A1 (en) * 1999-02-19 2002-02-21 Yang Jianping P. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
US6342755B1 (en) * 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
DE10122602A1 (de) * 2000-12-19 2002-07-04 Jisoon Ihm Emitterstruktur für Feldemissionsanzeige
US7019449B2 (en) * 2001-01-05 2006-03-28 The Ohio State University Chemical monolayer field emitter device
EP1328001A1 (en) * 2002-01-10 2003-07-16 Samsung Electronics Co., Ltd. Field emitter device comprising carbon nanotube having protective membrane
US20040189182A1 (en) * 2003-03-26 2004-09-30 Liang Liu Carbon nanotube-based field emission display
US7201627B2 (en) * 2003-07-31 2007-04-10 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing ultrafine carbon fiber and field emission element

Also Published As

Publication number Publication date
WO2008058527A2 (de) 2008-05-22
WO2008058527A3 (de) 2008-10-16
ATE455358T1 (de) 2010-01-15
DE502007002648D1 (de) 2010-03-04
EP2092542B1 (de) 2010-01-13
KR20090092770A (ko) 2009-09-01
US20100052511A1 (en) 2010-03-04
CA2667653A1 (en) 2008-05-22
CN101663724A (zh) 2010-03-03
EP2092542A2 (de) 2009-08-26
JP2010509740A (ja) 2010-03-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R002 Refusal decision in examination/registration proceedings
8131 Rejection
R003 Refusal decision now final

Effective date: 20110316