JP2010509740A - 電界放出装置 - Google Patents

電界放出装置 Download PDF

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Publication number
JP2010509740A
JP2010509740A JP2009536600A JP2009536600A JP2010509740A JP 2010509740 A JP2010509740 A JP 2010509740A JP 2009536600 A JP2009536600 A JP 2009536600A JP 2009536600 A JP2009536600 A JP 2009536600A JP 2010509740 A JP2010509740 A JP 2010509740A
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JP
Japan
Prior art keywords
field emission
emission device
anode
atoms
shape
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Pending
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JP2009536600A
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English (en)
Japanese (ja)
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JP2010509740A5 (enExample
Inventor
キースマン、ティル
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Individual
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Individual
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Publication of JP2010509740A publication Critical patent/JP2010509740A/ja
Publication of JP2010509740A5 publication Critical patent/JP2010509740A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Gas-Filled Discharge Tubes (AREA)
JP2009536600A 2006-11-15 2007-11-15 電界放出装置 Pending JP2010509740A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006054206A DE102006054206A1 (de) 2006-11-15 2006-11-15 Feldemissionsvorrichtung
PCT/DE2007/002065 WO2008058527A2 (de) 2006-11-15 2007-11-15 Feldemissionsvorrichtung

Publications (2)

Publication Number Publication Date
JP2010509740A true JP2010509740A (ja) 2010-03-25
JP2010509740A5 JP2010509740A5 (enExample) 2011-01-06

Family

ID=39311228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009536600A Pending JP2010509740A (ja) 2006-11-15 2007-11-15 電界放出装置

Country Status (9)

Country Link
US (1) US20100052511A1 (enExample)
EP (1) EP2092542B1 (enExample)
JP (1) JP2010509740A (enExample)
KR (1) KR20090092770A (enExample)
CN (1) CN101663724A (enExample)
AT (1) ATE455358T1 (enExample)
CA (1) CA2667653A1 (enExample)
DE (2) DE102006054206A1 (enExample)
WO (1) WO2008058527A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9224851B2 (en) 2011-10-14 2015-12-29 Diftek Lasers, Inc. Planarized semiconductor particles positioned on a substrate
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US9455307B2 (en) 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids
US12230468B2 (en) 2022-06-30 2025-02-18 Varex Imaging Corporation X-ray system with field emitters and arc protection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023513A (ja) * 1999-07-06 2001-01-26 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
JP2001236026A (ja) * 2000-02-21 2001-08-31 Ricoh Co Ltd 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2003115255A (ja) * 2001-10-04 2003-04-18 Kazuyuki Taji 電界電子放出電極およびその製造方法
JP2004241292A (ja) * 2003-02-07 2004-08-26 Sony Corp 冷陰極電界電子放出表示装置
JP2006297549A (ja) * 2005-04-21 2006-11-02 Keio Gijuku 金属ナノ粒子の配列蒸着方法及び金属ナノ粒子を用いたカーボンナノチューブの成長方法

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JPS6276576A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 注入型発光素子
US4818914A (en) * 1987-07-17 1989-04-04 Sri International High efficiency lamp
GB2235819A (en) * 1989-08-12 1991-03-13 Cathodeon Ltd Gas discharge display device
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
JPH04315750A (ja) * 1991-01-10 1992-11-06 Nec Corp 薄膜トランジスタ制御型蛍光表示パネル
US5515234A (en) * 1993-06-30 1996-05-07 Texas Instruments Incorporated Antistatic protector and method
DE4405768A1 (de) * 1994-02-23 1995-08-24 Till Keesmann Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung
USRE38561E1 (en) * 1995-02-22 2004-08-03 Till Keesmann Field emission cathode
US5667724A (en) * 1996-05-13 1997-09-16 Motorola Phosphor and method of making same
US5785873A (en) * 1996-06-24 1998-07-28 Industrial Technology Research Institute Low cost field emission based print head and method of making
US5882533A (en) * 1996-07-15 1999-03-16 Industrial Technology Research Institute Field emission based print head
DE69919242T2 (de) * 1998-02-12 2005-08-11 Canon K.K. Verfahren zur Herstellung eines elektronenemittierenden Elementes, Elektronenquelle und Bilderzeugungsgerätes
FR2789223B1 (fr) * 1999-01-29 2001-03-23 Univ Nantes Corps de cathode ferroelectrique pour la production d'electrons
US6207578B1 (en) * 1999-02-19 2001-03-27 Micron Technology, Inc. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
US6342755B1 (en) * 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
KR100480768B1 (ko) * 1999-12-23 2005-04-06 삼성에스디아이 주식회사 전도성 발광물질을 이용한 저전압 구동용 적색 형광체 및그 제조방법
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
US7112366B2 (en) * 2001-01-05 2006-09-26 The Ohio State University Chemical monolayer and micro-electronic junctions and devices containing same
KR20030060611A (ko) * 2002-01-10 2003-07-16 삼성전자주식회사 보호막을 가지는 탄소나노튜브를 구비하는 전계방출소자
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6787792B2 (en) * 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
CN1287413C (zh) * 2003-03-26 2006-11-29 清华大学 一种场发射显示器
KR100551229B1 (ko) * 2003-06-26 2006-02-10 주식회사 디피아이 솔루션스 디스플레이용 유기 투명 전극의 제조방법
US7201627B2 (en) * 2003-07-31 2007-04-10 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing ultrafine carbon fiber and field emission element
CN1333013C (zh) * 2004-12-15 2007-08-22 中国科学院化学研究所 导电聚苯胺与碳纳米管复合的电磁屏蔽复合膜及其制法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023513A (ja) * 1999-07-06 2001-01-26 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
JP2001236026A (ja) * 2000-02-21 2001-08-31 Ricoh Co Ltd 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2003115255A (ja) * 2001-10-04 2003-04-18 Kazuyuki Taji 電界電子放出電極およびその製造方法
JP2004241292A (ja) * 2003-02-07 2004-08-26 Sony Corp 冷陰極電界電子放出表示装置
JP2006297549A (ja) * 2005-04-21 2006-11-02 Keio Gijuku 金属ナノ粒子の配列蒸着方法及び金属ナノ粒子を用いたカーボンナノチューブの成長方法

Also Published As

Publication number Publication date
CN101663724A (zh) 2010-03-03
EP2092542B1 (de) 2010-01-13
DE102006054206A1 (de) 2008-05-21
KR20090092770A (ko) 2009-09-01
DE502007002648D1 (de) 2010-03-04
US20100052511A1 (en) 2010-03-04
CA2667653A1 (en) 2008-05-22
WO2008058527A3 (de) 2008-10-16
ATE455358T1 (de) 2010-01-15
EP2092542A2 (de) 2009-08-26
WO2008058527A2 (de) 2008-05-22

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