TW480537B - Method for enhancing emission efficiency of carbon nanotube emission source field - Google Patents

Method for enhancing emission efficiency of carbon nanotube emission source field Download PDF

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Publication number
TW480537B
TW480537B TW90101592A TW90101592A TW480537B TW 480537 B TW480537 B TW 480537B TW 90101592 A TW90101592 A TW 90101592A TW 90101592 A TW90101592 A TW 90101592A TW 480537 B TW480537 B TW 480537B
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TW
Taiwan
Prior art keywords
carbon nanotube
cnt
anode substrate
layer
surface
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Application number
TW90101592A
Inventor
You-Yang Jang
Jr-Rung Shiu
Jeng-Jung Li
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Ind Tech Res Inst
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Priority to TW90101592A priority Critical patent/TW480537B/en
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Publication of TW480537B publication Critical patent/TW480537B/en

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Abstract

A method for enhancing the current density of field emission of a carbon nanotube comprises the following steps: using a screen printing to print a carbon nanotube slurry on an anode conductive region of an anode substrate to form a plurality of pixel blocks of a carbon nanotube layer; applying a low temperature (about 50-200 DEG C) soft baking to the anode substrate 1 to remove the volatile solvent; applying a sintering treatment at 350 to 550 DEG C to the anode substrate; and using a surface treatment adhesion film to tightly adhere to the anode substrate and peeling off the film to remove the low adhesive carbon nanotubes remained on the surface of the CNT layer and pulling up CNT which has a strong adhesion but lies flat on the surface to make the CNT perpendicular to the electron emission layer. The present invention can be used to effectively increase the number and density of the carbon nanotubes perpendicularly exposed on the CNT emitter layer, thereby increasing the current density of the field emission, while conspicuously improving the homogeneity and brightness thereof.
TW90101592A 2001-01-19 2001-01-19 Method for enhancing emission efficiency of carbon nanotube emission source field TW480537B (en)

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TW90101592A TW480537B (en) 2001-01-19 2001-01-19 Method for enhancing emission efficiency of carbon nanotube emission source field

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TW90101592A TW480537B (en) 2001-01-19 2001-01-19 Method for enhancing emission efficiency of carbon nanotube emission source field

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TW480537B true TW480537B (en) 2002-03-21

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TW90101592A TW480537B (en) 2001-01-19 2001-01-19 Method for enhancing emission efficiency of carbon nanotube emission source field

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7413613B2 (en) 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display
US7448931B2 (en) 2004-05-26 2008-11-11 Tsinghua University Method for manufacturing carbon nanotube field emission device
US7927652B2 (en) 2006-11-15 2011-04-19 Tsinghua University Method for manufacturing field emission electron source
TWI394195B (en) * 2007-07-20 2013-04-21 Hon Hai Prec Ind Co Ltd Field emission pixel tube
TWI474371B (en) * 2004-07-06 2015-02-21 Samsung Electronics Co Ltd Patterning nanoparticle field emitters

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7448931B2 (en) 2004-05-26 2008-11-11 Tsinghua University Method for manufacturing carbon nanotube field emission device
TWI474371B (en) * 2004-07-06 2015-02-21 Samsung Electronics Co Ltd Patterning nanoparticle field emitters
US7413613B2 (en) 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display
US7927652B2 (en) 2006-11-15 2011-04-19 Tsinghua University Method for manufacturing field emission electron source
TWI394195B (en) * 2007-07-20 2013-04-21 Hon Hai Prec Ind Co Ltd Field emission pixel tube

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