JP2010509740A5 - - Google Patents
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- Publication number
- JP2010509740A5 JP2010509740A5 JP2009536600A JP2009536600A JP2010509740A5 JP 2010509740 A5 JP2010509740 A5 JP 2010509740A5 JP 2009536600 A JP2009536600 A JP 2009536600A JP 2009536600 A JP2009536600 A JP 2009536600A JP 2010509740 A5 JP2010509740 A5 JP 2010509740A5
- Authority
- JP
- Japan
- Prior art keywords
- field emission
- emission device
- anode
- atoms
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 5
- 239000000126 substance Substances 0.000 claims 4
- 125000004429 atom Chemical group 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 claims 1
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000002114 nanocomposite Substances 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000002071 nanotube Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229920000767 polyaniline Polymers 0.000 claims 1
- 229920000128 polypyrrole Polymers 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006054206A DE102006054206A1 (de) | 2006-11-15 | 2006-11-15 | Feldemissionsvorrichtung |
| PCT/DE2007/002065 WO2008058527A2 (de) | 2006-11-15 | 2007-11-15 | Feldemissionsvorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010509740A JP2010509740A (ja) | 2010-03-25 |
| JP2010509740A5 true JP2010509740A5 (enExample) | 2011-01-06 |
Family
ID=39311228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009536600A Pending JP2010509740A (ja) | 2006-11-15 | 2007-11-15 | 電界放出装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20100052511A1 (enExample) |
| EP (1) | EP2092542B1 (enExample) |
| JP (1) | JP2010509740A (enExample) |
| KR (1) | KR20090092770A (enExample) |
| CN (1) | CN101663724A (enExample) |
| AT (1) | ATE455358T1 (enExample) |
| CA (1) | CA2667653A1 (enExample) |
| DE (2) | DE102006054206A1 (enExample) |
| WO (1) | WO2008058527A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9224851B2 (en) | 2011-10-14 | 2015-12-29 | Diftek Lasers, Inc. | Planarized semiconductor particles positioned on a substrate |
| US9209019B2 (en) | 2013-09-05 | 2015-12-08 | Diftek Lasers, Inc. | Method and system for manufacturing a semi-conducting backplane |
| US9455307B2 (en) | 2011-10-14 | 2016-09-27 | Diftek Lasers, Inc. | Active matrix electro-optical device and method of making thereof |
| US10312310B2 (en) | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| EP3933881A1 (en) | 2020-06-30 | 2022-01-05 | VEC Imaging GmbH & Co. KG | X-ray source with multiple grids |
| US12230468B2 (en) | 2022-06-30 | 2025-02-18 | Varex Imaging Corporation | X-ray system with field emitters and arc protection |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276576A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 注入型発光素子 |
| US4818914A (en) * | 1987-07-17 | 1989-04-04 | Sri International | High efficiency lamp |
| GB2235819A (en) * | 1989-08-12 | 1991-03-13 | Cathodeon Ltd | Gas discharge display device |
| US5126574A (en) * | 1989-10-10 | 1992-06-30 | The United States Of America As Represented By The Secretary Of Commerce | Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication |
| JPH04315750A (ja) * | 1991-01-10 | 1992-11-06 | Nec Corp | 薄膜トランジスタ制御型蛍光表示パネル |
| US5515234A (en) * | 1993-06-30 | 1996-05-07 | Texas Instruments Incorporated | Antistatic protector and method |
| DE4405768A1 (de) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung |
| USRE38561E1 (en) * | 1995-02-22 | 2004-08-03 | Till Keesmann | Field emission cathode |
| US5667724A (en) * | 1996-05-13 | 1997-09-16 | Motorola | Phosphor and method of making same |
| US5785873A (en) * | 1996-06-24 | 1998-07-28 | Industrial Technology Research Institute | Low cost field emission based print head and method of making |
| US5882533A (en) * | 1996-07-15 | 1999-03-16 | Industrial Technology Research Institute | Field emission based print head |
| DE69919242T2 (de) * | 1998-02-12 | 2005-08-11 | Canon K.K. | Verfahren zur Herstellung eines elektronenemittierenden Elementes, Elektronenquelle und Bilderzeugungsgerätes |
| FR2789223B1 (fr) * | 1999-01-29 | 2001-03-23 | Univ Nantes | Corps de cathode ferroelectrique pour la production d'electrons |
| US6207578B1 (en) * | 1999-02-19 | 2001-03-27 | Micron Technology, Inc. | Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays |
| JP4010077B2 (ja) * | 1999-07-06 | 2007-11-21 | ソニー株式会社 | 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法 |
| US6342755B1 (en) * | 1999-08-11 | 2002-01-29 | Sony Corporation | Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles |
| KR100480768B1 (ko) * | 1999-12-23 | 2005-04-06 | 삼성에스디아이 주식회사 | 전도성 발광물질을 이용한 저전압 구동용 적색 형광체 및그 제조방법 |
| JP2001236026A (ja) * | 2000-02-21 | 2001-08-31 | Ricoh Co Ltd | 表示用蛍光体、表示用蛍光体の製造方法、および該表示用蛍光体を使用した電界放出表示素子 |
| JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
| KR20020049630A (ko) * | 2000-12-19 | 2002-06-26 | 임지순 | 전계방출 에미터 |
| US7112366B2 (en) * | 2001-01-05 | 2006-09-26 | The Ohio State University | Chemical monolayer and micro-electronic junctions and devices containing same |
| JP2003115255A (ja) * | 2001-10-04 | 2003-04-18 | Kazuyuki Taji | 電界電子放出電極およびその製造方法 |
| KR20030060611A (ko) * | 2002-01-10 | 2003-07-16 | 삼성전자주식회사 | 보호막을 가지는 탄소나노튜브를 구비하는 전계방출소자 |
| US6852554B2 (en) * | 2002-02-27 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Emission layer formed by rapid thermal formation process |
| US6787792B2 (en) * | 2002-04-18 | 2004-09-07 | Hewlett-Packard Development Company, L.P. | Emitter with filled zeolite emission layer |
| JP2004241292A (ja) * | 2003-02-07 | 2004-08-26 | Sony Corp | 冷陰極電界電子放出表示装置 |
| CN1287413C (zh) * | 2003-03-26 | 2006-11-29 | 清华大学 | 一种场发射显示器 |
| KR100551229B1 (ko) * | 2003-06-26 | 2006-02-10 | 주식회사 디피아이 솔루션스 | 디스플레이용 유기 투명 전극의 제조방법 |
| US7201627B2 (en) * | 2003-07-31 | 2007-04-10 | Semiconductor Energy Laboratory, Co., Ltd. | Method for manufacturing ultrafine carbon fiber and field emission element |
| CN1333013C (zh) * | 2004-12-15 | 2007-08-22 | 中国科学院化学研究所 | 导电聚苯胺与碳纳米管复合的电磁屏蔽复合膜及其制法 |
| JP2006297549A (ja) * | 2005-04-21 | 2006-11-02 | Keio Gijuku | 金属ナノ粒子の配列蒸着方法及び金属ナノ粒子を用いたカーボンナノチューブの成長方法 |
-
2006
- 2006-11-15 DE DE102006054206A patent/DE102006054206A1/de not_active Ceased
-
2007
- 2007-11-15 KR KR1020097009979A patent/KR20090092770A/ko not_active Withdrawn
- 2007-11-15 JP JP2009536600A patent/JP2010509740A/ja active Pending
- 2007-11-15 CA CA002667653A patent/CA2667653A1/en not_active Abandoned
- 2007-11-15 EP EP07846340A patent/EP2092542B1/de not_active Not-in-force
- 2007-11-15 AT AT07846340T patent/ATE455358T1/de active
- 2007-11-15 US US12/514,765 patent/US20100052511A1/en not_active Abandoned
- 2007-11-15 CN CN200780042058A patent/CN101663724A/zh active Pending
- 2007-11-15 WO PCT/DE2007/002065 patent/WO2008058527A2/de not_active Ceased
- 2007-11-15 DE DE502007002648T patent/DE502007002648D1/de active Active
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