KR20080098403A - 고개구수 노광 장치용 펠리클 - Google Patents

고개구수 노광 장치용 펠리클 Download PDF

Info

Publication number
KR20080098403A
KR20080098403A KR1020087021323A KR20087021323A KR20080098403A KR 20080098403 A KR20080098403 A KR 20080098403A KR 1020087021323 A KR1020087021323 A KR 1020087021323A KR 20087021323 A KR20087021323 A KR 20087021323A KR 20080098403 A KR20080098403 A KR 20080098403A
Authority
KR
South Korea
Prior art keywords
pellicle
film
pellicle film
exposure
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087021323A
Other languages
English (en)
Korean (ko)
Inventor
마사히로 곤도우
도시히코 나카노
Original Assignee
미쓰이 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰이 가가쿠 가부시키가이샤 filed Critical 미쓰이 가가쿠 가부시키가이샤
Publication of KR20080098403A publication Critical patent/KR20080098403A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087021323A 2006-02-01 2007-01-30 고개구수 노광 장치용 펠리클 Ceased KR20080098403A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00024246 2006-02-01
JP2006024246 2006-02-01

Publications (1)

Publication Number Publication Date
KR20080098403A true KR20080098403A (ko) 2008-11-07

Family

ID=38327433

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087021323A Ceased KR20080098403A (ko) 2006-02-01 2007-01-30 고개구수 노광 장치용 펠리클

Country Status (6)

Country Link
US (1) US20090042107A1 (OSRAM)
EP (1) EP1983370A4 (OSRAM)
JP (1) JPWO2007088862A1 (OSRAM)
KR (1) KR20080098403A (OSRAM)
TW (1) TW200732835A (OSRAM)
WO (1) WO2007088862A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012093834A3 (ko) * 2011-01-04 2012-12-06 주식회사 에프에스티 펠리클 막 및 그 제조방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4885241B2 (ja) * 2006-02-17 2012-02-29 フリースケール セミコンダクター インコーポレイテッド ペリクルを用いて層をパターニングする方法
JP4873565B2 (ja) * 2006-04-07 2012-02-08 信越化学工業株式会社 リソグラフィー用ペリクル
JP2007293036A (ja) * 2006-04-25 2007-11-08 Shin Etsu Chem Co Ltd リソグラフィー用ペリクル
CN104597531B (zh) * 2010-04-13 2017-04-12 旭化成株式会社 自支撑膜、自支撑结构体、自支撑膜的制造方法
TWI611479B (zh) * 2016-09-29 2018-01-11 台灣積體電路製造股份有限公司 薄膜組件的製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07199451A (ja) * 1993-12-28 1995-08-04 Shin Etsu Chem Co Ltd ペリクル
US5741576A (en) * 1995-09-06 1998-04-21 Inko Industrial Corporation Optical pellicle with controlled transmission peaks and anti-reflective coatings
JP2000162761A (ja) * 1998-09-22 2000-06-16 Mitsui Chemicals Inc ペリクル、その製法及び露光方法
TW420770B (en) * 1998-09-22 2001-02-01 Mitsui Chemicals Inc Pellicle film, method of preparing the same and exposure method
JP2000275817A (ja) * 1999-01-22 2000-10-06 Shin Etsu Chem Co Ltd リソグラフィー用ペリクルおよびその製造方法
JP4000231B2 (ja) * 1999-03-10 2007-10-31 信越化学工業株式会社 耐光性を改良したリソグラフィー用ペリクル
JP3562790B2 (ja) * 1999-06-02 2004-09-08 信越化学工業株式会社 ペリクル
JP4202547B2 (ja) * 1999-08-30 2008-12-24 信越化学工業株式会社 リソグラフィー用ペリクル
JP2001109133A (ja) * 1999-10-06 2001-04-20 Mitsui Chemicals Inc ペリクル膜及びそれを利用する露光方法
US6824930B1 (en) * 1999-11-17 2004-11-30 E. I. Du Pont De Nemours And Company Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
JP2001154340A (ja) * 1999-11-25 2001-06-08 Asahi Glass Co Ltd ペリクル
US7271950B1 (en) * 2000-02-16 2007-09-18 Toppan Photomasks, Inc. Apparatus and method for optimizing a pellicle for off-axis transmission of light
JP2001264957A (ja) * 2000-03-22 2001-09-28 Shin Etsu Chem Co Ltd リソグラフィー用ペリクル
US6594073B2 (en) * 2001-05-30 2003-07-15 Micro Lithography, Inc. Antistatic optical pellicle
JP2004102269A (ja) * 2002-08-21 2004-04-02 Asahi Glass Co Ltd 紫外光透過性含フッ素重合体および該重合体からなるペリクル
JP2004085713A (ja) * 2002-08-23 2004-03-18 Asahi Glass Co Ltd ペリクル
JP4352666B2 (ja) * 2002-08-23 2009-10-28 旭硝子株式会社 ペリクル及びこれを用いる露光処理方法
JP2004226476A (ja) * 2003-01-20 2004-08-12 Asahi Glass Co Ltd ペリクルの製造方法
JP2005070120A (ja) * 2003-08-27 2005-03-17 Shin Etsu Chem Co Ltd リソグラフィ用ペリクル
TW200617611A (en) * 2004-06-01 2006-06-01 Du Pont Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications
EP1904894A1 (en) * 2005-07-18 2008-04-02 Carl Zeiss SMT AG Pellicle for use in a microlithographic exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012093834A3 (ko) * 2011-01-04 2012-12-06 주식회사 에프에스티 펠리클 막 및 그 제조방법

Also Published As

Publication number Publication date
TW200732835A (en) 2007-09-01
US20090042107A1 (en) 2009-02-12
EP1983370A4 (en) 2010-08-18
WO2007088862A1 (ja) 2007-08-09
EP1983370A1 (en) 2008-10-22
JPWO2007088862A1 (ja) 2009-06-25
TWI329781B (OSRAM) 2010-09-01

Similar Documents

Publication Publication Date Title
CN100373260C (zh) 光刻法中使用的涂敷了氟聚合物的光学掩模
JP5285185B2 (ja) フォトマスクユニット及びその製造方法
US10001701B1 (en) Pellicle structures and methods of fabricating thereof
KR20080098403A (ko) 고개구수 노광 장치용 펠리클
US7271950B1 (en) Apparatus and method for optimizing a pellicle for off-axis transmission of light
KR20080023338A (ko) 마이크로리소그래피 노출 장치용 펠리클
EP0119310B1 (en) Method of fabricating a pellicle cover for projection printing system
US20120244477A1 (en) Pellicle for lithography
JPS60237450A (ja) 非反射性フオトマスク・レチクル用防塵カバ−体及びその製造方法
EP1850177B1 (en) Litographic pellicle
JP4873565B2 (ja) リソグラフィー用ペリクル
JP2007264499A (ja) 開口数が1以上の露光装置に使用可能なペリクル
JP2001255643A (ja) リソグラフィー用ペリクル
JPH0594006A (ja) 耐光性ペリクル
RU82349U1 (ru) Фоторезист для нанолитографии
WO2006027942A1 (ja) 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
KR20100102520A (ko) 펠리클의 제조 방법 및 펠리클
JPS63163462A (ja) マスクの保護防塵体
JPH0212151A (ja) g線、i線共用ペリクル
KR20110057423A (ko) 액침 노광 장치용 펠리클 및 그 제조방법
HK1146154A (en) Method for manufacturing pellicle
TW200538865A (en) Photosensitive material for immersion photolithography
JPS63163461A (ja) マスクの保護防塵体

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000