KR20080042748A - 연마액 - Google Patents

연마액 Download PDF

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Publication number
KR20080042748A
KR20080042748A KR1020070114401A KR20070114401A KR20080042748A KR 20080042748 A KR20080042748 A KR 20080042748A KR 1020070114401 A KR1020070114401 A KR 1020070114401A KR 20070114401 A KR20070114401 A KR 20070114401A KR 20080042748 A KR20080042748 A KR 20080042748A
Authority
KR
South Korea
Prior art keywords
polishing
polishing liquid
group
acid
ring
Prior art date
Application number
KR1020070114401A
Other languages
English (en)
Korean (ko)
Inventor
테츠야 카미무라
토시유키 사이에
타다시 이나바
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20080042748A publication Critical patent/KR20080042748A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020070114401A 2006-11-10 2007-11-09 연마액 KR20080042748A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00305981 2006-11-10
JP2006305981A JP2008124222A (ja) 2006-11-10 2006-11-10 研磨液

Publications (1)

Publication Number Publication Date
KR20080042748A true KR20080042748A (ko) 2008-05-15

Family

ID=39404030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070114401A KR20080042748A (ko) 2006-11-10 2007-11-09 연마액

Country Status (4)

Country Link
JP (1) JP2008124222A (zh)
KR (1) KR20080042748A (zh)
CN (1) CN101177602A (zh)
TW (1) TW200920827A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117431013A (zh) * 2023-12-21 2024-01-23 芯越微电子材料(嘉兴)有限公司 一种化学机械抛光液及抛光方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617275B2 (en) 2008-04-23 2013-12-31 Hitachi Chemical Company, Ltd. Polishing agent and method for polishing substrate using the polishing agent
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
JP5304993B2 (ja) * 2008-08-04 2013-10-02 Ｊｓｒ株式会社 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板
TWI465556B (zh) * 2010-09-14 2014-12-21 Everlight Chem Ind Corp 用於粗拋晶圓之研磨組成物
WO2013021296A1 (en) * 2011-08-09 2013-02-14 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
JP6305674B2 (ja) * 2012-02-17 2018-04-04 株式会社フジミインコーポレーテッド 研磨用組成物及び半導体基板の製造方法
EP2682440A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
JP2015135968A (ja) * 2015-01-28 2015-07-27 ニッタ・ハース株式会社 研磨用スラリー
KR101572639B1 (ko) * 2015-07-07 2015-11-27 엘티씨에이엠 주식회사 Cmp 후 세정액 조성물
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
WO2019069370A1 (ja) * 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
CN110983340A (zh) * 2019-10-28 2020-04-10 河北工业大学 低技术节点铜布线用铜膜碱性抛光液
CN112476072B (zh) * 2020-12-14 2022-08-19 中山市博涛光学技术有限公司 一种具有高透光率高稳定性的光学玻璃的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816836B2 (ja) * 1998-12-28 2011-11-16 日立化成工業株式会社 金属用研磨液及びそれを用いた研磨方法
JP2002080827A (ja) * 2000-02-09 2002-03-22 Jsr Corp 化学機械研磨用水系分散体
JP4253141B2 (ja) * 2000-08-21 2009-04-08 株式会社東芝 化学機械研磨用スラリおよび半導体装置の製造方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117431013A (zh) * 2023-12-21 2024-01-23 芯越微电子材料(嘉兴)有限公司 一种化学机械抛光液及抛光方法
CN117431013B (zh) * 2023-12-21 2024-04-26 芯越微电子材料(嘉兴)有限公司 一种化学机械抛光液及抛光方法

Also Published As

Publication number Publication date
JP2008124222A (ja) 2008-05-29
CN101177602A (zh) 2008-05-14
TW200920827A (en) 2009-05-16

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