KR20080034022A - 질화갈륨 등의 ｉｉｉ족 질화물의 성막 방법 - Google Patents

질화갈륨 등의 ｉｉｉ족 질화물의 성막 방법 Download PDF

Info

Publication number
KR20080034022A
KR20080034022A KR1020087005407A KR20087005407A KR20080034022A KR 20080034022 A KR20080034022 A KR 20080034022A KR 1020087005407 A KR1020087005407 A KR 1020087005407A KR 20087005407 A KR20087005407 A KR 20087005407A KR 20080034022 A KR20080034022 A KR 20080034022A
Authority
KR
South Korea
Prior art keywords
substrate
gallium
nitrogen
film
discharge space
Prior art date
Application number
KR1020087005407A
Other languages
English (en)
Korean (ko)
Inventor
다카히로 나가타
도요히로 치쿄
츠요시 우에하라
Original Assignee
세키스이가가쿠 고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세키스이가가쿠 고교가부시키가이샤 filed Critical 세키스이가가쿠 고교가부시키가이샤
Publication of KR20080034022A publication Critical patent/KR20080034022A/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020087005407A 2005-08-05 2006-08-03 질화갈륨 등의 ｉｉｉ족 질화물의 성막 방법 KR20080034022A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005228727 2005-08-05
JPJP-P-2005-00228727 2005-08-05

Publications (1)

Publication Number Publication Date
KR20080034022A true KR20080034022A (ko) 2008-04-17

Family

ID=37727306

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087005407A KR20080034022A (ko) 2005-08-05 2006-08-03 질화갈륨 등의 ｉｉｉ족 질화물의 성막 방법

Country Status (7)

Country Link
US (1) US20090170294A1 (zh)
EP (1) EP1916704A4 (zh)
JP (1) JPWO2007018121A1 (zh)
KR (1) KR20080034022A (zh)
CN (1) CN100589229C (zh)
TW (1) TW200709281A (zh)
WO (1) WO2007018121A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111401A1 (ja) * 2007-03-14 2008-09-18 Sekisui Chemical Co., Ltd. 窒化ガリウム等のiii族窒化物の成膜方法
US20100006023A1 (en) * 2008-07-11 2010-01-14 Palo Alto Research Center Incorporated Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
KR20110079831A (ko) * 2008-10-03 2011-07-08 비코 프로세스 이큅먼트, 아이엔씨. 기상 에피택시 시스템
TW201250017A (en) * 2011-06-08 2012-12-16 Ind Tech Res Inst Method and apparatus for depositing selenium thin-film and plasma head thereof
CN104561940A (zh) * 2014-12-24 2015-04-29 苏州矩阵光电有限公司 等离子体辅助的金属有机物化学气相沉积设备及方法
JP7097767B2 (ja) * 2018-07-19 2022-07-08 サカタインクス株式会社 プラズマ処理立体造形装置
JP2022139024A (ja) * 2021-03-11 2022-09-26 株式会社Ｓｃｒｅｅｎホールディングス Ｉｉｉ族窒化物半導体の製造方法および製造装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
JP3774257B2 (ja) * 1996-01-30 2006-05-10 京セラ株式会社 窒化物半導体単結晶薄膜の成長方法及び同装置
JPH11217673A (ja) * 1997-11-28 1999-08-10 Japan Pionics Co Ltd 窒化膜の製造方法
US6106898A (en) * 1997-11-28 2000-08-22 Japan Pionics, Co., Ltd. Process for preparing nitride film
JP2000109979A (ja) * 1998-10-05 2000-04-18 Tokujiro Okui 直流アーク放電プラズマによる表面処理方法
JP2000232256A (ja) * 1999-02-09 2000-08-22 Fuji Xerox Co Ltd 半導体素子及び半導体素子の製造方法
US6306739B1 (en) * 1999-04-27 2001-10-23 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
JP2001217193A (ja) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd ＡｌＮバッファ層の作成方法、ＡｌＮバッファ層、ＧａＮ単結晶膜の作成方法およびＧａＮ単結晶膜
JP2002029896A (ja) * 2000-07-05 2002-01-29 National Institute Of Advanced Industrial & Technology 窒化物半導体の結晶成長方法
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
TW200614372A (en) * 2004-03-26 2006-05-01 Sekisui Chemical Co Ltd Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material

Also Published As

Publication number Publication date
TW200709281A (en) 2007-03-01
US20090170294A1 (en) 2009-07-02
EP1916704A1 (en) 2008-04-30
JPWO2007018121A1 (ja) 2009-02-19
CN101233602A (zh) 2008-07-30
WO2007018121A1 (ja) 2007-02-15
CN100589229C (zh) 2010-02-10
EP1916704A4 (en) 2011-06-08
TWI308365B (zh) 2009-04-01

Similar Documents

Publication Publication Date Title
RU2462786C2 (ru) Способ и установка для эпитаксиального выращивания полупроводников типа iii-v, устройство генерации низкотемпературной плазмы высокой плотности, эпитаксиальный слой нитрида металла, эпитаксиальная гетероструктура нитрида металла и полупроводник
US8188468B2 (en) Compound-type thin film, method of forming the same, and electronic device using the same
KR100984086B1 (ko) 반도체 발광 소자 및 그 제조 방법
US7951685B2 (en) Method for manufacturing semiconductor epitaxial crystal substrate
Tang et al. Growth of high mobility GaN by ammonia-molecular beam epitaxy
US8273592B2 (en) Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp
KR20080034022A (ko) 질화갈륨 등의 ｉｉｉ족 질화물의 성막 방법
KR102211304B1 (ko) 질화갈륨 박막의 제조 방법
JPH09134878A (ja) 窒化ガリウム系化合物半導体の製造方法
Kingsley et al. Development of chemical beam epitaxy for the deposition of gallium nitride
US9013026B2 (en) Group III nitride semiconductor crystal, group III nitride semiconductor substrate, group III nitride semiconductor freestanding substrate, nitride semiconductor device, and rectifier diode
US6911079B2 (en) Method for reducing the resistivity of p-type II-VI and III-V semiconductors
JP5044860B2 (ja) 窒化ガリウム等のｉｉｉ族窒化物の成膜方法
US20220238645A1 (en) alpha-Ga2O3 SEMICONDUCTOR FILM
US20070034144A1 (en) Oxide crystal growth apparatus and fabrication method using the same
Grant et al. Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material
JPH11268996A (ja) 化合物半導体混晶の成長方法
JP2006140397A (ja) 窒化物系化合物半導体製造装置
KR19990007342A (ko) 질화물계 iii-v족 화합물 반도체 성장 방법 및 장치
WO2019176470A1 (ja) 半導体装置及びその製造方法
JP2022124009A (ja) 窒化物結晶、半導体積層物、窒化物結晶の製造方法および窒化物結晶製造装置
AU2012202511B2 (en) System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy
JP2008053589A (ja) 窒化インジウム（ＩｎＮ）あるいは高インジウム組成を有する窒化インジウムガリウム（ＩｎＧａＮ）エピタキシャル薄膜の形成方法
Sumiyoshi et al. AlGaN films grown on trenched sapphire substrates using a low‐temperature GaNP buffer layer by MOCVD

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid