KR20080016908A - 질화물반도체 발광 소자 및 질화물반도체 레이저 소자의제조 방법 - Google Patents
질화물반도체 발광 소자 및 질화물반도체 레이저 소자의제조 방법 Download PDFInfo
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- KR20080016908A KR20080016908A KR1020080007919A KR20080007919A KR20080016908A KR 20080016908 A KR20080016908 A KR 20080016908A KR 1020080007919 A KR1020080007919 A KR 1020080007919A KR 20080007919 A KR20080007919 A KR 20080007919A KR 20080016908 A KR20080016908 A KR 20080016908A
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- nitride semiconductor
- oxynitride
- coating film
- aluminum
- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Abstract
Description
질화물반도체에 접하는 제1층 | 제1층 위에 형성되는 제2층 | 제2층 위에 형성되는 제2층 | |||
재질 | 두께 | 재질 | 두께 | 재질 | 두께 |
알루미늄의 산질화물 (산소함유량:2%) | 20nm | 산화알루미늄(Al2O3) | 140nm | _ | - |
알루미늄의 산질화물 (산소함유량:5%) | 10nm | 알루미늄의 산질화물 (산소함유량:10%) | 5nm | 산화알루미늄(Al2O3) | 140nm |
알루미늄의 산질화물 (산소함유량:11%) | 50nm | 산화실리콘(SiO2) | 120nm | - | - |
알루미늄의 산질화물 (산소함유량:15%) | 6nm | 산화티타늄(TiO2) | 50nm | - | - |
알루미늄의 산질화물 (산소함유량:5%) | 10nm | 산화탄탈륨(Ta2O5) | 100nm | - | - |
알루미늄의 산질화물 (산소함유량:5%) | 10nm | 산화이트륨(Y2O5) | 230nm | - | - |
알루미늄의 산질화물 (산소함유량:5%) | 80nm | 산화지르코늄(ZrO2) | 100nm | - | - |
알루미늄의 산질화물 (산소함유량:2%) | 20nm | 질화실리콘(Si3N4) | 20nm | 산화실리콘(SiO2) | 140nm |
알루미늄의 산질화물 (산소함유량:4%) | 20nm | 질화실리콘(Si3N4) | 20nm | 산화알루미늄(Al2O3) | 120nm |
알루미늄의 산질화물 (산소함유량:3%) | 25nm | 질화실리콘(Si3N4) | 150nm | - | - |
알루미늄의 산질화물 (산소함유량:4%) | 20nm | 질화실리콘(Si3N4) | 150nm | 산화알루미늄(Al2O3) | 120nm |
알루미늄의 산질화물 (산소함유량:7%) | 20nm | 실리콘의 산질화물 (산소함유량:5%) | 150nm | - | - |
알루미늄의 산질화물 (산소함유량:7%) | 20nm | 질화실리콘(Si3N4) | 20nm | 실리콘의 산질화물 (산소함유량:5%) | 150nm |
Claims (7)
- 광출사부에 코팅막이 형성되어 있는 질화물반도체 발광 소자에 있어서,상기 광출사부는 질화물반도체로 이루어지고, 상기 광출사부에 접하는 코팅막이 산질화물로 이루어지고,상기 산질화물이 알루미늄의 산질화물인 것을 특징으로 하는, 질화물반도체 발광 소자.
- 제1항에 있어서, 상기 산질화물 중의 산소의 함유량이 2원자% 이상 35원자% 이하인 것을 특징으로 하는, 질화물반도체 발광소자.
- 제1항에 있어서, 상기 질화물반도체 발광 소자는 질화물반도체 레이저 소자이고, 상기 광출사부는 공진기 단면인 것을 특징으로 하는, 질화물반도체 발광 소자.
- 제3항에 있어서, 상기 산질화물 중의 산소의 함유량이 2원자% 이상 35원자% 이하인 것을 특징으로 하는, 질화물반도체 발광 소자.
- 질화물반도체로 이루어지는 광출사부에 알루미늄의 산질화물로 이루어지는 코팅막을 형성하는 공정을 포함하고,상기 코팅막은, 타겟으로 알루미늄을 사용하여, 상기 타겟을 산소와 질소를 포함하는 가스에 의해 스퍼터링하여 형성하는 것을 특징으로 하는, 질화물반도체 발광 소자의 제조 방법.
- 광출사부에 코팅막이 형성되어 있는 질화물반도체 발광 소자에 있어서,상기 광출사부는 질화물반도체로 이루어지고, 상기 광출사부에 접하는 코팅막이 알루미늄의 산질화물 또는 실리콘의 산질화물로 이루어지고,상기 질화물 반도체 발광 소자의 활성층이, AlxInyGazN(0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z≠0)으로 이루어지는 것을 특징으로 하는, 질화물반도체 발광 소자.
- 제6항에 있어서, 상기 질화물 반도체 발광 소자는 질화물반도체 레이저 소자이고, 발진 파장이 370nm~470nm인 것을 특징으로 하는 질화물반도체 발광 소자.
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JP2006320327A JP5191650B2 (ja) | 2005-12-16 | 2006-11-28 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
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US8735192B2 (en) | 2014-05-27 |
KR100898958B1 (ko) | 2009-05-25 |
JP2007189201A (ja) | 2007-07-26 |
US20070138492A1 (en) | 2007-06-21 |
KR100868268B1 (ko) | 2008-11-11 |
KR20080103943A (ko) | 2008-11-28 |
KR100924498B1 (ko) | 2009-11-03 |
US20090218593A1 (en) | 2009-09-03 |
KR20080103942A (ko) | 2008-11-28 |
KR20070064387A (ko) | 2007-06-20 |
KR100829137B1 (ko) | 2008-05-14 |
KR100924500B1 (ko) | 2009-11-02 |
US20080291961A1 (en) | 2008-11-27 |
US8368095B2 (en) | 2013-02-05 |
CN1983748A (zh) | 2007-06-20 |
CN102005699A (zh) | 2011-04-06 |
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