KR20070102623A - 이중 주파수 ｒｆ 신호들을 이용한 플라즈마 생성 및 제어 - Google Patents

이중 주파수 ｒｆ 신호들을 이용한 플라즈마 생성 및 제어 Download PDF

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Publication number
KR20070102623A
KR20070102623A KR1020077021009A KR20077021009A KR20070102623A KR 20070102623 A KR20070102623 A KR 20070102623A KR 1020077021009 A KR1020077021009 A KR 1020077021009A KR 20077021009 A KR20077021009 A KR 20077021009A KR 20070102623 A KR20070102623 A KR 20070102623A
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KR
South Korea
Prior art keywords
frequency
plasma
mhz
processing chamber
frequencies
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Ceased
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KR1020077021009A
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English (en)
Korean (ko)
Inventor
스티븐 샤논
알렉산더 파터슨
테오도로스 파나고폴로스
존 홀랜드
데니스 그리마드
다니엘 호프만
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20070102623A publication Critical patent/KR20070102623A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077021009A 2005-05-09 2006-05-04 이중 주파수 ｒｆ 신호들을 이용한 플라즈마 생성 및 제어 Ceased KR20070102623A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US67904205P 2005-05-09 2005-05-09
US60/679,042 2005-05-09
US11/416,468 2006-05-02
US11/416,468 US7510665B2 (en) 2003-08-15 2006-05-02 Plasma generation and control using dual frequency RF signals

Publications (1)

Publication Number Publication Date
KR20070102623A true KR20070102623A (ko) 2007-10-18

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ID=37396865

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077021009A Ceased KR20070102623A (ko) 2005-05-09 2006-05-04 이중 주파수 ｒｆ 신호들을 이용한 플라즈마 생성 및 제어

Country Status (5)

Country Link
US (1) US7510665B2 (https=)
JP (1) JP2008544480A (https=)
KR (1) KR20070102623A (https=)
TW (1) TWI344321B (https=)
WO (1) WO2006121744A1 (https=)

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KR20220031988A (ko) * 2020-09-02 2022-03-15 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법

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US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US9288886B2 (en) 2008-05-30 2016-03-15 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
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US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP5398058B2 (ja) * 2008-10-31 2014-01-29 株式会社ダイヘン 高周波電源装置
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
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JP2013529352A (ja) 2010-03-31 2013-07-18 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
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US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9284210B2 (en) * 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
EP4205515A2 (en) * 2020-08-28 2023-07-05 Plasma Surgical Investments Limited Systems, methods, and devices for generating predominantly radially expanded plasma flow

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220031988A (ko) * 2020-09-02 2022-03-15 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12437968B2 (en) 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US7510665B2 (en) 2009-03-31
TW200704289A (en) 2007-01-16
US20060266735A1 (en) 2006-11-30
WO2006121744A1 (en) 2006-11-16
JP2008544480A (ja) 2008-12-04
TWI344321B (en) 2011-06-21

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