TWI344321B - Plasma generation and control using dual frequency rf signals - Google Patents

Plasma generation and control using dual frequency rf signals Download PDF

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Publication number
TWI344321B
TWI344321B TW095116153A TW95116153A TWI344321B TW I344321 B TWI344321 B TW I344321B TW 095116153 A TW095116153 A TW 095116153A TW 95116153 A TW95116153 A TW 95116153A TW I344321 B TWI344321 B TW I344321B
Authority
TW
Taiwan
Prior art keywords
frequency
plasma
frequencies
mhz
processing chamber
Prior art date
Application number
TW095116153A
Other languages
English (en)
Chinese (zh)
Other versions
TW200704289A (en
Inventor
Steven C Shannon
Alexander Paterson
Theodoros Panagopoulos
John P Holland
Dennis Grimard
Daniel Hoffman
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/843,914 external-priority patent/US7431857B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200704289A publication Critical patent/TW200704289A/zh
Application granted granted Critical
Publication of TWI344321B publication Critical patent/TWI344321B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW095116153A 2003-08-15 2006-05-05 Plasma generation and control using dual frequency rf signals TWI344321B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US49552303P 2003-08-15 2003-08-15
US10/843,914 US7431857B2 (en) 2003-08-15 2004-05-12 Plasma generation and control using a dual frequency RF source
US67904205P 2005-05-09 2005-05-09
US11/416,468 US7510665B2 (en) 2003-08-15 2006-05-02 Plasma generation and control using dual frequency RF signals

Publications (2)

Publication Number Publication Date
TW200704289A TW200704289A (en) 2007-01-16
TWI344321B true TWI344321B (en) 2011-06-21

Family

ID=37396865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116153A TWI344321B (en) 2003-08-15 2006-05-05 Plasma generation and control using dual frequency rf signals

Country Status (5)

Country Link
US (1) US7510665B2 (https=)
JP (1) JP2008544480A (https=)
KR (1) KR20070102623A (https=)
TW (1) TWI344321B (https=)
WO (1) WO2006121744A1 (https=)

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US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US9288886B2 (en) 2008-05-30 2016-03-15 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
WO2009146439A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
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JP2013529352A (ja) 2010-03-31 2013-07-18 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
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US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9284210B2 (en) * 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
EP4205515A2 (en) * 2020-08-28 2023-07-05 Plasma Surgical Investments Limited Systems, methods, and devices for generating predominantly radially expanded plasma flow
JP7075540B1 (ja) 2020-09-02 2022-05-25 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法

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Also Published As

Publication number Publication date
KR20070102623A (ko) 2007-10-18
US7510665B2 (en) 2009-03-31
TW200704289A (en) 2007-01-16
US20060266735A1 (en) 2006-11-30
WO2006121744A1 (en) 2006-11-16
JP2008544480A (ja) 2008-12-04

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