KR20070102533A - 중간 이미지를 갖는 카타디옵트릭 투사 대물렌즈 - Google Patents

중간 이미지를 갖는 카타디옵트릭 투사 대물렌즈 Download PDF

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Publication number
KR20070102533A
KR20070102533A KR1020077017879A KR20077017879A KR20070102533A KR 20070102533 A KR20070102533 A KR 20070102533A KR 1020077017879 A KR1020077017879 A KR 1020077017879A KR 20077017879 A KR20077017879 A KR 20077017879A KR 20070102533 A KR20070102533 A KR 20070102533A
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KR
South Korea
Prior art keywords
image
projection objective
intermediate image
plane
subsystem
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077017879A
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English (en)
Korean (ko)
Inventor
아우렐리안 도독
Original Assignee
칼 짜이스 에스엠테 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠테 아게 filed Critical 칼 짜이스 에스엠테 아게
Publication of KR20070102533A publication Critical patent/KR20070102533A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/026—Catoptric systems, e.g. image erecting and reversing system having static image erecting or reversing properties only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020077017879A 2005-02-03 2006-01-28 중간 이미지를 갖는 카타디옵트릭 투사 대물렌즈 Withdrawn KR20070102533A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64914005P 2005-02-03 2005-02-03
US60/649,140 2005-02-03

Publications (1)

Publication Number Publication Date
KR20070102533A true KR20070102533A (ko) 2007-10-18

Family

ID=36096356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017879A Withdrawn KR20070102533A (ko) 2005-02-03 2006-01-28 중간 이미지를 갖는 카타디옵트릭 투사 대물렌즈

Country Status (5)

Country Link
US (1) US20090128896A1 (https=)
EP (1) EP1844365A1 (https=)
JP (1) JP2008529094A (https=)
KR (1) KR20070102533A (https=)
WO (1) WO2006081991A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011020690A2 (en) 2009-08-07 2011-02-24 Carl Zeiss Smt Gmbh Method for producing a mirror having at least two mirror surfaces, mirror of a projection exposure apparatus for microlithography, and projection exposure apparatus
DE102009037077B3 (de) 2009-08-13 2011-02-17 Carl Zeiss Smt Ag Katadioptrisches Projektionsobjektiv
US11175487B2 (en) * 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171870A (en) * 1977-05-06 1979-10-23 Bell Telephone Laboratories, Incorporated Compact image projection apparatus
US5159172A (en) * 1990-08-07 1992-10-27 International Business Machines Corporation Optical projection system
US5636066A (en) * 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JP3635684B2 (ja) * 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3348467B2 (ja) * 1993-06-30 2002-11-20 株式会社ニコン 露光装置及び方法
US5461455A (en) * 1993-08-23 1995-10-24 International Business Machines Corporation Optical system for the projection of patterned light onto the surfaces of three dimensional objects
JPH08181063A (ja) * 1994-12-26 1996-07-12 Nikon Corp 露光装置
JPH09289160A (ja) * 1996-04-23 1997-11-04 Nikon Corp 露光装置
DE10005189A1 (de) * 2000-02-05 2001-08-09 Zeiss Carl Projektionsbelichtungsanlage mit reflektivem Retikel
JP4245286B2 (ja) * 2000-10-23 2009-03-25 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
JP4292497B2 (ja) * 2002-04-17 2009-07-08 株式会社ニコン 投影光学系、露光装置および露光方法
JP2003309059A (ja) * 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
US6757110B2 (en) * 2002-05-29 2004-06-29 Asml Holding N.V. Catadioptric lithography system and method with reticle stage orthogonal to wafer stage
US6731374B1 (en) * 2002-12-02 2004-05-04 Asml Holding N.V. Beam-splitter optics design that maintains an unflipped (unmirrored) image for a catadioptric lithographic system
KR101790914B1 (ko) * 2003-05-06 2017-10-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting

Also Published As

Publication number Publication date
US20090128896A1 (en) 2009-05-21
JP2008529094A (ja) 2008-07-31
WO2006081991A1 (en) 2006-08-10
EP1844365A1 (en) 2007-10-17

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070802

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid