JP2008529094A - 中間像を有する反射屈折投影対物レンズ - Google Patents
中間像を有する反射屈折投影対物レンズ Download PDFInfo
- Publication number
- JP2008529094A JP2008529094A JP2007553511A JP2007553511A JP2008529094A JP 2008529094 A JP2008529094 A JP 2008529094A JP 2007553511 A JP2007553511 A JP 2007553511A JP 2007553511 A JP2007553511 A JP 2007553511A JP 2008529094 A JP2008529094 A JP 2008529094A
- Authority
- JP
- Japan
- Prior art keywords
- projection objective
- image
- plane
- intermediate image
- mirrors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 238000003384 imaging method Methods 0.000 claims abstract description 14
- 210000001747 pupil Anatomy 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 8
- 230000010287 polarization Effects 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/026—Catoptric systems, e.g. image erecting and reversing system having static image erecting or reversing properties only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64914005P | 2005-02-03 | 2005-02-03 | |
| PCT/EP2006/000740 WO2006081991A1 (en) | 2005-02-03 | 2006-01-28 | Catadioptric projection objective with intermediate image |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008529094A true JP2008529094A (ja) | 2008-07-31 |
| JP2008529094A5 JP2008529094A5 (https=) | 2009-03-19 |
Family
ID=36096356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007553511A Pending JP2008529094A (ja) | 2005-02-03 | 2006-01-28 | 中間像を有する反射屈折投影対物レンズ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090128896A1 (https=) |
| EP (1) | EP1844365A1 (https=) |
| JP (1) | JP2008529094A (https=) |
| KR (1) | KR20070102533A (https=) |
| WO (1) | WO2006081991A1 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012185503A (ja) * | 2009-08-13 | 2012-09-27 | Carl Zeiss Smt Gmbh | 反射屈折投影対物系 |
| JP2013501370A (ja) * | 2009-08-07 | 2013-01-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 少なくとも2つの鏡面を有するミラーを製造する方法、マイクロリソグラフィ用投影露光装置のミラー、及び投影露光装置 |
| JP2022517144A (ja) * | 2019-03-27 | 2022-03-04 | ズース マイクロテック フォトニック システムズ インコーポレイテッド | 投影システムにおける光学歪み低減 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4171870A (en) * | 1977-05-06 | 1979-10-23 | Bell Telephone Laboratories, Incorporated | Compact image projection apparatus |
| JPH04251812A (ja) * | 1990-08-07 | 1992-09-08 | Internatl Business Mach Corp <Ibm> | 光学装置 |
| JPH0757986A (ja) * | 1993-06-30 | 1995-03-03 | Nikon Corp | 露光装置 |
| JPH08181063A (ja) * | 1994-12-26 | 1996-07-12 | Nikon Corp | 露光装置 |
| JPH09289160A (ja) * | 1996-04-23 | 1997-11-04 | Nikon Corp | 露光装置 |
| JP2001297980A (ja) * | 2000-02-05 | 2001-10-26 | Carl Zeiss:Fa | マイクロリソグラフィーの投影露光装置 |
| JP2004186689A (ja) * | 2002-12-02 | 2004-07-02 | Asml Holding Nv | レチクルに形成されたパターンをウェハに投影させる光学システム、ウェハにイメージを形成する方法及びウェハ光学素子にイメージを形成する方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5636066A (en) * | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
| JP3635684B2 (ja) * | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
| US5729331A (en) * | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US5461455A (en) * | 1993-08-23 | 1995-10-24 | International Business Machines Corporation | Optical system for the projection of patterned light onto the surfaces of three dimensional objects |
| JP4245286B2 (ja) * | 2000-10-23 | 2009-03-25 | 株式会社ニコン | 反射屈折光学系および該光学系を備えた露光装置 |
| JP4292497B2 (ja) * | 2002-04-17 | 2009-07-08 | 株式会社ニコン | 投影光学系、露光装置および露光方法 |
| JP2003309059A (ja) * | 2002-04-17 | 2003-10-31 | Nikon Corp | 投影光学系、その製造方法、露光装置および露光方法 |
| US6757110B2 (en) * | 2002-05-29 | 2004-06-29 | Asml Holding N.V. | Catadioptric lithography system and method with reticle stage orthogonal to wafer stage |
| KR101790914B1 (ko) * | 2003-05-06 | 2017-10-26 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
-
2006
- 2006-01-28 KR KR1020077017879A patent/KR20070102533A/ko not_active Withdrawn
- 2006-01-28 WO PCT/EP2006/000740 patent/WO2006081991A1/en not_active Ceased
- 2006-01-28 EP EP06704356A patent/EP1844365A1/en not_active Withdrawn
- 2006-01-28 JP JP2007553511A patent/JP2008529094A/ja active Pending
- 2006-01-28 US US11/815,522 patent/US20090128896A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4171870A (en) * | 1977-05-06 | 1979-10-23 | Bell Telephone Laboratories, Incorporated | Compact image projection apparatus |
| JPH04251812A (ja) * | 1990-08-07 | 1992-09-08 | Internatl Business Mach Corp <Ibm> | 光学装置 |
| JPH0757986A (ja) * | 1993-06-30 | 1995-03-03 | Nikon Corp | 露光装置 |
| JPH08181063A (ja) * | 1994-12-26 | 1996-07-12 | Nikon Corp | 露光装置 |
| JPH09289160A (ja) * | 1996-04-23 | 1997-11-04 | Nikon Corp | 露光装置 |
| JP2001297980A (ja) * | 2000-02-05 | 2001-10-26 | Carl Zeiss:Fa | マイクロリソグラフィーの投影露光装置 |
| JP2004186689A (ja) * | 2002-12-02 | 2004-07-02 | Asml Holding Nv | レチクルに形成されたパターンをウェハに投影させる光学システム、ウェハにイメージを形成する方法及びウェハ光学素子にイメージを形成する方法 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013501370A (ja) * | 2009-08-07 | 2013-01-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 少なくとも2つの鏡面を有するミラーを製造する方法、マイクロリソグラフィ用投影露光装置のミラー、及び投影露光装置 |
| US9606339B2 (en) | 2009-08-07 | 2017-03-28 | Carl Zeiss Smt Gmbh | Mirror of a projection exposure apparatus for microlithography with mirror surfaces on different mirror sides, and projection exposure apparatus |
| JP2012185503A (ja) * | 2009-08-13 | 2012-09-27 | Carl Zeiss Smt Gmbh | 反射屈折投影対物系 |
| US8873137B2 (en) | 2009-08-13 | 2014-10-28 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| US9279969B2 (en) | 2009-08-13 | 2016-03-08 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| US9726870B2 (en) | 2009-08-13 | 2017-08-08 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| US10042146B2 (en) | 2009-08-13 | 2018-08-07 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| JP2022517144A (ja) * | 2019-03-27 | 2022-03-04 | ズース マイクロテック フォトニック システムズ インコーポレイテッド | 投影システムにおける光学歪み低減 |
| JP7101317B2 (ja) | 2019-03-27 | 2022-07-14 | ズース マイクロテック フォトニック システムズ インコーポレイテッド | 投影システムにおける光学歪み低減 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070102533A (ko) | 2007-10-18 |
| US20090128896A1 (en) | 2009-05-21 |
| WO2006081991A1 (en) | 2006-08-10 |
| EP1844365A1 (en) | 2007-10-17 |
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| RD04 | Notification of resignation of power of attorney |
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| A977 | Report on retrieval |
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