JP2008529094A - 中間像を有する反射屈折投影対物レンズ - Google Patents

中間像を有する反射屈折投影対物レンズ Download PDF

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Publication number
JP2008529094A
JP2008529094A JP2007553511A JP2007553511A JP2008529094A JP 2008529094 A JP2008529094 A JP 2008529094A JP 2007553511 A JP2007553511 A JP 2007553511A JP 2007553511 A JP2007553511 A JP 2007553511A JP 2008529094 A JP2008529094 A JP 2008529094A
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JP
Japan
Prior art keywords
projection objective
image
plane
intermediate image
mirrors
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Pending
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JP2007553511A
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English (en)
Japanese (ja)
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JP2008529094A5 (https=
Inventor
ドドック アウレリアン
Original Assignee
カール・ツァイス・エスエムティー・アーゲー
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Publication of JP2008529094A publication Critical patent/JP2008529094A/ja
Publication of JP2008529094A5 publication Critical patent/JP2008529094A5/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02Catoptric systems, e.g. image erecting and reversing system
    • G02B17/026Catoptric systems, e.g. image erecting and reversing system having static image erecting or reversing properties only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007553511A 2005-02-03 2006-01-28 中間像を有する反射屈折投影対物レンズ Pending JP2008529094A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64914005P 2005-02-03 2005-02-03
PCT/EP2006/000740 WO2006081991A1 (en) 2005-02-03 2006-01-28 Catadioptric projection objective with intermediate image

Publications (2)

Publication Number Publication Date
JP2008529094A true JP2008529094A (ja) 2008-07-31
JP2008529094A5 JP2008529094A5 (https=) 2009-03-19

Family

ID=36096356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007553511A Pending JP2008529094A (ja) 2005-02-03 2006-01-28 中間像を有する反射屈折投影対物レンズ

Country Status (5)

Country Link
US (1) US20090128896A1 (https=)
EP (1) EP1844365A1 (https=)
JP (1) JP2008529094A (https=)
KR (1) KR20070102533A (https=)
WO (1) WO2006081991A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012185503A (ja) * 2009-08-13 2012-09-27 Carl Zeiss Smt Gmbh 反射屈折投影対物系
JP2013501370A (ja) * 2009-08-07 2013-01-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 少なくとも2つの鏡面を有するミラーを製造する方法、マイクロリソグラフィ用投影露光装置のミラー、及び投影露光装置
JP2022517144A (ja) * 2019-03-27 2022-03-04 ズース マイクロテック フォトニック システムズ インコーポレイテッド 投影システムにおける光学歪み低減

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171870A (en) * 1977-05-06 1979-10-23 Bell Telephone Laboratories, Incorporated Compact image projection apparatus
JPH04251812A (ja) * 1990-08-07 1992-09-08 Internatl Business Mach Corp <Ibm> 光学装置
JPH0757986A (ja) * 1993-06-30 1995-03-03 Nikon Corp 露光装置
JPH08181063A (ja) * 1994-12-26 1996-07-12 Nikon Corp 露光装置
JPH09289160A (ja) * 1996-04-23 1997-11-04 Nikon Corp 露光装置
JP2001297980A (ja) * 2000-02-05 2001-10-26 Carl Zeiss:Fa マイクロリソグラフィーの投影露光装置
JP2004186689A (ja) * 2002-12-02 2004-07-02 Asml Holding Nv レチクルに形成されたパターンをウェハに投影させる光学システム、ウェハにイメージを形成する方法及びウェハ光学素子にイメージを形成する方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636066A (en) * 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JP3635684B2 (ja) * 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US5461455A (en) * 1993-08-23 1995-10-24 International Business Machines Corporation Optical system for the projection of patterned light onto the surfaces of three dimensional objects
JP4245286B2 (ja) * 2000-10-23 2009-03-25 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
JP4292497B2 (ja) * 2002-04-17 2009-07-08 株式会社ニコン 投影光学系、露光装置および露光方法
JP2003309059A (ja) * 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
US6757110B2 (en) * 2002-05-29 2004-06-29 Asml Holding N.V. Catadioptric lithography system and method with reticle stage orthogonal to wafer stage
KR101790914B1 (ko) * 2003-05-06 2017-10-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171870A (en) * 1977-05-06 1979-10-23 Bell Telephone Laboratories, Incorporated Compact image projection apparatus
JPH04251812A (ja) * 1990-08-07 1992-09-08 Internatl Business Mach Corp <Ibm> 光学装置
JPH0757986A (ja) * 1993-06-30 1995-03-03 Nikon Corp 露光装置
JPH08181063A (ja) * 1994-12-26 1996-07-12 Nikon Corp 露光装置
JPH09289160A (ja) * 1996-04-23 1997-11-04 Nikon Corp 露光装置
JP2001297980A (ja) * 2000-02-05 2001-10-26 Carl Zeiss:Fa マイクロリソグラフィーの投影露光装置
JP2004186689A (ja) * 2002-12-02 2004-07-02 Asml Holding Nv レチクルに形成されたパターンをウェハに投影させる光学システム、ウェハにイメージを形成する方法及びウェハ光学素子にイメージを形成する方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013501370A (ja) * 2009-08-07 2013-01-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 少なくとも2つの鏡面を有するミラーを製造する方法、マイクロリソグラフィ用投影露光装置のミラー、及び投影露光装置
US9606339B2 (en) 2009-08-07 2017-03-28 Carl Zeiss Smt Gmbh Mirror of a projection exposure apparatus for microlithography with mirror surfaces on different mirror sides, and projection exposure apparatus
JP2012185503A (ja) * 2009-08-13 2012-09-27 Carl Zeiss Smt Gmbh 反射屈折投影対物系
US8873137B2 (en) 2009-08-13 2014-10-28 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9279969B2 (en) 2009-08-13 2016-03-08 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9726870B2 (en) 2009-08-13 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective
US10042146B2 (en) 2009-08-13 2018-08-07 Carl Zeiss Smt Gmbh Catadioptric projection objective
JP2022517144A (ja) * 2019-03-27 2022-03-04 ズース マイクロテック フォトニック システムズ インコーポレイテッド 投影システムにおける光学歪み低減
JP7101317B2 (ja) 2019-03-27 2022-07-14 ズース マイクロテック フォトニック システムズ インコーポレイテッド 投影システムにおける光学歪み低減

Also Published As

Publication number Publication date
KR20070102533A (ko) 2007-10-18
US20090128896A1 (en) 2009-05-21
WO2006081991A1 (en) 2006-08-10
EP1844365A1 (en) 2007-10-17

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