KR20070027433A - 태양전지 흡수층의 제조방법 - Google Patents
태양전지 흡수층의 제조방법 Download PDFInfo
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- KR20070027433A KR20070027433A KR1020060061755A KR20060061755A KR20070027433A KR 20070027433 A KR20070027433 A KR 20070027433A KR 1020060061755 A KR1020060061755 A KR 1020060061755A KR 20060061755 A KR20060061755 A KR 20060061755A KR 20070027433 A KR20070027433 A KR 20070027433A
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- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 claims description 10
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
Description
Claims (18)
- (a) 반응물질로서 1B족 금속의 셀레나이드 입자와 3A족 금속의 셀레나이드 입자의 혼합물 페이스트를 준비하는 단계;(b) 상기 페이스트를 기재 상에 도포하는 단계; 및(c) 상기 도포층을 급속 열처리하는 단계;를 포함하는 것으로 구성된 1B-3A-Se 화합물의 태양전지 흡수층을 제조하는 방법.
- 제 1 항에 있어서, 상기 1B족 금속 셀레나이드는 Cu-Se인 것을 특징으로 하는 방법.
- 제 2 항에 있어서, 상기 Cu-Se는 구리염과 아셀렌산(H2SeO3)을 소정의 용매에 첨가한 후 가열하여 제조하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 3A족 금속 셀레나이드는 In-Se 또는 Ga-Se인 것을 특징으로 하는 방법.
- 제 4 항에 있어서, 상기 In-Se는 인듐염과 아셀렌산(H2SeO3)을 소정의 용매에 첨가한 후 가열하여 제조하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 금속 셀레나이드 입자들은 5 nm ~ 10 ㎛의 입경을 가지는 것을 특징으로 하는 방법.
- 제 6 항에 있어서, 상기 금속 셀레나이드 입자들은 50 nm ~ 5 ㎛의 입경을 가지는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 1B족 금속 셀레나이드로서 Cu-Se를 사용하고 3A족 금속 셀레나이드로서 In-Se 및/또는 Ga-Se를 사용하는 경우, 각 금속의 몰비는 Cu/(In+Ga)가 0.6 ~ 1.5이고 Ga/(Ga+In)가 0 ~ 0.5인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 도포층은 단층 또는 다층의 구조로서 전체 두께가 3 ~ 5 ㎛인 것을 특징으로 하는 방법.
- 제 9 항에 있어서, 상기 도포층은 3층 구조로 이루어져 있고, 최하단의 제 1 층은 Cu/(In+Ga) = 0 ~ 0.9의 몰비를 가지는 층으로서 0.1 ~ 1.0 ㎛의 두께를 가지며, 중간층인 제 2 층은 Cu/(In+Ga) = 0.8 ~ 3.0의 몰비로서 0.5 ~ 3.0 ㎛의 두께를 가지며, 최상단의 제 3 층은 Cu/(In+Ga) = 0 ~ 0.9의 몰비로서 0.1 ~ 1.0 ㎛의 두께를 가지는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 급속 열처리는 400 ~ 600℃의 온도에서 1 ~ 30 분 동안 수행하는 것을 특징으로 하는 방법.
- 1B족 금속의 셀레나이드 입자와 3A족 금속의 셀레나이드 입자를 포함하는 것으로 구성된 금속 셀레나이드 혼합물 페이스트.
- 제 12 항에 있어서, 상기 페이스트는 In-Se 입자와 Cu-Se 입자를 포함하는 조성으로 이루어진 것을 특징으로 하는 금속 셀레나이드 혼합물 페이스트.
- 제 12 항에 있어서, 상기 페이스트의 용매로는 물, 알코올류 화합물, 카보네이트계 화합물 및 글리콜류 화합물로 이루어진 군에서 선택된 하나 또는 둘 이상의 화합물이 사용되는 것을 특징으로 하는 금속 셀레나이드 혼합물 페이스트.
- 제 12 항에 있어서, 상기 페이스트에는 Na, K, Ni, P, As, Sb 및 Bi로 이루어진 군에서 선택되는 하나 또는 둘 이상의 도펀트(dopant)가 추가로 첨가되는 것을 특징으로 하는 금속 셀레나이드 혼합물 페이스트.
- 제 12 항에 있어서, 상기 페이스트에는 도포층의 형성을 돕는 바인더가 추가로 첨가되는 것을 특징으로 하는 금속 셀레나이드 혼합물 페이스트.
- 제 1 항 내지 제 11 항 어느 하나에 따른 방법으로 제조된 흡수층을 포함하는 태양전지.
- 제 17 항에 있어서, 상기 흡수층의 화합물은 Cu(In,Ga)Se2인 것을 특징으로 하는 태양전지.
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KR20150016136A (ko) * | 2013-08-01 | 2015-02-11 | 주식회사 엘지화학 | 태양전지 광흡수층 제조용 응집상 전구체 및 이의 제조방법 |
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