KR20070022026A - 광학 재료, 광학 렌즈 및 프리즘 - Google Patents
광학 재료, 광학 렌즈 및 프리즘 Download PDFInfo
- Publication number
- KR20070022026A KR20070022026A KR1020067019975A KR20067019975A KR20070022026A KR 20070022026 A KR20070022026 A KR 20070022026A KR 1020067019975 A KR1020067019975 A KR 1020067019975A KR 20067019975 A KR20067019975 A KR 20067019975A KR 20070022026 A KR20070022026 A KR 20070022026A
- Authority
- KR
- South Korea
- Prior art keywords
- crystal
- refractive index
- optical
- composition
- cubic crystal
- Prior art date
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/04—Prisms
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Public Health (AREA)
- Optical Head (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Elements Other Than Lenses (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Glass Compositions (AREA)
- Lenses (AREA)
Abstract
Description
Claims (15)
- αβO3로 이루어지고, α는 K, Ba, Sr, Ca의 적어도 하나이고, β는 Ta, Ti의 적어도 하나인 입방결정의 결정재료로 이루어지는 것을 특징으로 하는 광학 재료.
- KTaO3 -d로 이루어지고, 산소 결손양 d가 0≤d<10-7인 입방결정의 결정재료로 이루어지는 것을 특징으로 하는 광학 재료.
- KTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35인 입방결정의 결정재료로 이루어지는 것을 특징으로 하는 광학 재료.
- K1 - yLiyTaO3로 이루어지고, 조성 y가 0≤y≤0.02인 입방결정의 결정재료로 이루어지는 것을 특징으로 하는 광학 재료.
- K1 - yLiyTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35이고, 조성 y가 0≤y≤0.02인 입방결정의 결정재료로 이루어지는 것을 특징으로 하는 광학 재료.
- αβO3로 이루어지고, α는 K, Ba, Sr, Ca의 적어도 하나이고, β는 Ta, Ti의 적어도 하나인 입방결정의 결정재료로 이루어지고,파장 360nm∼800nm에 있어서 굴절률 2.2 이상을 가지고, 두께 10mm에 있어서의 투과율이 80% 이상 또는 이것과 동등의 투과율을 가지는 것을 특징으로 하는 광학 렌즈.
- 제6항에 있어서,상기 입방결정의 결정재료는, KTaO3 -d로 이루어지고, 산소 결손양 d가 0≤d<10-7인 것을 특징으로 하는 광학 렌즈.
- 제6항에 있어서,상기 입방결정의 결정재료는, KTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35인 것을 특징으로 하는 광학 렌즈.
- 제6항에 있어서,상기 입방결정의 결정재료는, K1 - yLiyTaO3로 이루어지고, 조성 y가 0≤y≤0.02인 것을 특징으로 하는 광학 렌즈.
- 제6항에 있어서,상기 입방결정의 결정재료는, K1 - yLiyTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35이고, 조성 y가 0≤y≤0.02인 것을 특징으로 하는 광학 렌즈.
- αβO3로 이루어지고, α는 K, Ba, Sr, Ca의 적어도 하나이고, β는 Ta, Ti의 적어도 하나인 입방결정의 결정재료로 이루어지고,파장 360nm∼800nm에 있어서 굴절률 2.2 이상을 가지고, 2.2W/cm2의 조사 강도로 10분간 조사하는 경우의 투과율의 열화가 1% 이하 또는 이것과 동등의 투과율 열화 특성을 가지는 것을 특징으로 하는 프리즘.
- 제11항에 있어서,상기 입방결정의 결정재료는, KTaO3 -d로 이루어지고, 산소 결손양 d가 0≤d<10-7인 것을 특징으로 하는 프리즘.
- 제11항에 있어서,상기 입방결정의 결정재료는, KTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35인 것을 특징으로 하는 프리즘.
- 제11항에 있어서,상기 입방결정의 결정재료는, K1 - yLiyTaO3로 이루어지고, 조성 y가 0≤y≤0.02인 것을 특징으로 하는 프리즘.
- 제11항에 있어서,상기 입방결정의 결정재료는, K1 - yLiyTa1 - xNbxO3로 이루어지고, 조성 x가 0≤x≤0.35이고, 조성 y가 0≤y≤0.02인 것을 특징으로 하는 프리즘.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004183966 | 2004-06-22 | ||
JPJP-P-2004-00183966 | 2004-06-22 | ||
PCT/JP2005/011433 WO2005124398A1 (ja) | 2004-06-22 | 2005-06-22 | 光学材料、光学レンズおよびプリズム |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070022026A true KR20070022026A (ko) | 2007-02-23 |
KR100998098B1 KR100998098B1 (ko) | 2010-12-02 |
Family
ID=35509826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067019975A Expired - Fee Related KR100998098B1 (ko) | 2004-06-22 | 2005-06-22 | 광학 재료, 광학 렌즈 및 프리즘 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7674737B2 (ko) |
EP (1) | EP1760496A4 (ko) |
JP (1) | JPWO2005124398A1 (ko) |
KR (1) | KR100998098B1 (ko) |
CN (1) | CN100399058C (ko) |
WO (1) | WO2005124398A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105623653B (zh) * | 2016-03-31 | 2018-02-09 | 深圳市力沣实业有限公司 | 一种光学液体及其制备方法 |
CN109212861B (zh) * | 2018-11-16 | 2022-02-22 | 京东方科技集团股份有限公司 | 透镜组件及其控制方法、显示装置 |
US20240006440A1 (en) * | 2020-11-30 | 2024-01-04 | Nippon Telegraph And Telephone Corporation | Optical element, image sensor and imaging device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6148498A (ja) * | 1984-08-17 | 1986-03-10 | Asahi Glass Co Ltd | タンタル酸アルカリ単結晶の製造方法及びそのためのルツボ |
JPS61163189A (ja) * | 1985-01-10 | 1986-07-23 | Asahi Glass Co Ltd | 単結晶製造用ルツボ |
US5614129A (en) * | 1993-04-21 | 1997-03-25 | California Institute Of Technology | Potassium lithium tantalate niobate photorefractive crystals |
JPH0782087A (ja) | 1993-09-13 | 1995-03-28 | Asahi Glass Co Ltd | 酸化物単結晶の製造方法 |
JP3259891B2 (ja) | 1994-11-11 | 2002-02-25 | 日本電信電話株式会社 | ホログラム記録材料 |
US6043940A (en) * | 1997-11-14 | 2000-03-28 | Kyocera Corporation | Optical system for optical recording |
JP2000019301A (ja) | 1998-06-29 | 2000-01-21 | Kyocera Corp | 光学レンズ及びそれを用いた光記録装置 |
JP2000191398A (ja) * | 1998-12-28 | 2000-07-11 | Kyocera Corp | チタン酸バリウム単結晶及びそれを用いた光学部品並びに光記録再生装置 |
JP2000266996A (ja) * | 1999-03-19 | 2000-09-29 | Nippon Sheet Glass Co Ltd | 屈折率分布レンズを用いた光学系 |
JP3760364B2 (ja) * | 1999-07-21 | 2006-03-29 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
EP1248143A3 (en) * | 2001-04-02 | 2004-10-20 | Nippon Telegraph and Telephone Corporation | Wavelength converter |
JP3623749B2 (ja) | 2001-04-02 | 2005-02-23 | 日本電信電話株式会社 | 波長変換デバイス |
JP2003167187A (ja) | 2001-06-20 | 2003-06-13 | Konica Corp | 対物レンズ、光ピックアップ装置及び記録・再生装置 |
CN1244096C (zh) * | 2001-10-10 | 2006-03-01 | 索尼公司 | 光学透镜、聚光透镜、光学拾取器和光学记录/再现装置 |
JP2003123302A (ja) | 2001-10-10 | 2003-04-25 | Sony Corp | 光学ピックアップ及び光記録再生装置 |
KR20060015242A (ko) | 2003-06-13 | 2006-02-16 | 니뽄 덴신 덴와 가부시키가이샤 | 파장 가변 광 필터 |
US7268549B2 (en) * | 2003-09-18 | 2007-09-11 | Electroplated Metal Solutions | Magnetic resonance spectrometer |
US20050062011A1 (en) * | 2003-09-18 | 2005-03-24 | Electroplated Metal Solutions, Inc. | Ferroelectric single crystal resonator and methods for preparation and use thereof |
-
2005
- 2005-06-22 WO PCT/JP2005/011433 patent/WO2005124398A1/ja not_active Application Discontinuation
- 2005-06-22 CN CNB2005800101675A patent/CN100399058C/zh not_active Expired - Fee Related
- 2005-06-22 US US10/599,452 patent/US7674737B2/en not_active Expired - Fee Related
- 2005-06-22 EP EP05753470A patent/EP1760496A4/en not_active Ceased
- 2005-06-22 JP JP2006514852A patent/JPWO2005124398A1/ja active Pending
- 2005-06-22 KR KR1020067019975A patent/KR100998098B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070199505A1 (en) | 2007-08-30 |
CN100399058C (zh) | 2008-07-02 |
KR100998098B1 (ko) | 2010-12-02 |
EP1760496A1 (en) | 2007-03-07 |
JPWO2005124398A1 (ja) | 2008-04-10 |
US7674737B2 (en) | 2010-03-09 |
WO2005124398A1 (ja) | 2005-12-29 |
EP1760496A4 (en) | 2008-04-02 |
CN1938605A (zh) | 2007-03-28 |
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