KR20060097066A - 텅스텐막의 형성 방법 - Google Patents
텅스텐막의 형성 방법 Download PDFInfo
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- KR20060097066A KR20060097066A KR1020067015538A KR20067015538A KR20060097066A KR 20060097066 A KR20060097066 A KR 20060097066A KR 1020067015538 A KR1020067015538 A KR 1020067015538A KR 20067015538 A KR20067015538 A KR 20067015538A KR 20060097066 A KR20060097066 A KR 20060097066A
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 246
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 246
- 239000010937 tungsten Substances 0.000 title claims abstract description 246
- 238000000034 method Methods 0.000 title claims abstract description 155
- 239000007789 gas Substances 0.000 claims abstract description 249
- 230000008569 process Effects 0.000 claims abstract description 84
- 238000010926 purge Methods 0.000 claims abstract description 23
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 230000009467 reduction Effects 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 30
- 238000002161 passivation Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 17
- 229910000077 silane Inorganic materials 0.000 claims description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 5
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000002411 adverse Effects 0.000 abstract description 7
- 230000006911 nucleation Effects 0.000 abstract description 5
- 238000010899 nucleation Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 180
- 230000004888 barrier function Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 239000007806 chemical reaction intermediate Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 230000000977 initiatory effect Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910004469 SiHx Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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Abstract
Description
Claims (21)
- 진공 배기 가능하게 이루어진 처리 용기내에서 피 처리체의 표면에 텅스텐막을 형성함에 있어서,환원 가스를 공급하는 환원 가스 공급 공정과 텅스텐 함유 가스를 공급하는 텅스텐 가스 공급 공정을 상기 양 공정의 사이에 불활성 가스를 공급하면서 진공 배기하는 퍼지공정을 개재시키고, 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 1 항에 있어서,상기 환원 가스를 공급 공정과 상기 텅스텐 가스 공급 공정과 상기 퍼지공정을 통해서 상기 가스의 전압력이 일정하게 되도록 제어하고, 상기 환원 가스 공급 공정과 상기 텅스텐 가스 공급 공정을 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 1 항에 있어서,상기 반복되는 환원 가스 공급 공정 중 최초의 환원 가스 공급 공정에서, 환원 가스의 부분 압력과 공급 시간과의 곱에 의해서 이루어지는 파라미터를, 다른 환원 가스 공급 공정의 파라미터보다 커지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 1 항에 있어서,상기 반복되는 환원 가스 공급 공정 중 최초의 환원 가스 공급 공정에서, 환원 가스의 공급 시간을 다른 환원 가스 공급 공정의 공급 시간보다 길어지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 1 항에 있어서,상기 텅스텐 함유 가스는 WF6가스와 유기 텅스텐 소스 가스 중 어느 하나인 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 1 항에 있어서,상기 환원 가스는 H2가스, 실란(SiH4), 디실란(Si2H6), 디클로로 실란(SiH2Cl2), 디보란(B2H6), 포스핀(PH3) 중 어느 하나로 이루어지는 것을 특징으로 하는텅스텐막의 형성 방법.
- 진공 배기 가능하게 이루어진 처리 용기내에서 피 처리체의 표면에 텅스텐막을 형성함에 있어서,환원 가스를 공급하는 환원 가스 공급 공정과 텅스텐 함유 가스를 공급하는 텅스텐 가스 공급 공정을, 상기 양 공정의 사이에 불활성 가스를 공급하면서 진공 배기하는 퍼지공정을 개재시키고, 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하고,상기 초기 텅스텐막을 형성한 후에, 상기 텅스텐 함유 가스와 상기 환원 가스를 동시에 공급함으로써 주 텅스텐막을 형성하는 주 텅스텐막 형성 공정을 실행하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 7 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 환원 가스 공급 공정과 상기 텅스텐 가스 공급 공정과 상기 퍼지공정을 통해서 상기 가스의 전압력이 일정하게 되도록 제어하고, 상기 환원 가스 공급 공정과 상기 텅스텐 가스 공급 공정을 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 7 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 반복되는 환원 가스 공급 공정 중 최초의 환원 가스 공급 공정에 있어서의 환원 가스의 부분 압력과 공급 시간과의 곱에 의해서 이루어지는 파라미터를, 다른 환원 가스 공급 공정의 파라미터보다 커지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 7 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 반복되는 환원 가스 공 급 공정 중 최초의 환원 가스 공급 공정에 있어서의 환원 가스의 공급 시간을 다른 환원 가스 공급 공정의 공급 시간보다 길어지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 7 항에 있어서,상기 텅스텐 함유 가스는 WF6가스와 유기 텅스텐 소스 가스 중 어느 하나인 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 7 항에 있어서,상기 환원 가스는 H2가스, 실란(SiH4), 디실란(Si2H6), 디클로로 실란(SiH2Cl2), 디보란(B2H6), 포스핀(PH3) 중 어느 하나로 이루어지는 것을 특징으로 하는텅스텐막의 형성 방법.
- 진공 배기 가능하게 이루어진 처리 용기내에서 피 처리체의 표면에 텅스텐막 을 형성함에 있어서,환원 가스를 공급하는 환원 가스 공급 공정과 텅스텐 함유 가스를 공급하는 텅스텐 가스 공급 공정을, 상기 양 공정의 사이에 불활성 가스를 공급하면서 진공 배기하는 퍼지공정을 개재시키고, 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하고,상기 초기 텅스텐막을 형성한 후에, 상기 텅스텐 함유 가스와 상기 환원 가스를 동시에 공급함으로써 주 텅스텐막을 형성하는 주 텅스텐막 형성 공정을 실행하고,상기 초기 텅스텐막을 형성하는 공정과 상기 주 텅스텐막을 형성하는 공정의 사이에, 상기 텅스텐 함유 가스의 유량비가 상기 주 텅스텐막 형성 공정의 경우보다 작은 상태로, 상기 텅스텐 함유 가스와 상기 환원 가스를 동시에 공급함으로써 패시베이션 텅스텐막을 형성하는 패시베이션 텅스텐막 형성 공정을 실행하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 환원 가스 공급 공정과 상기 텅스텐 가스 공급 공정과 상기 퍼지공정을 통해서 상기 가스의 전압력이 일정하게 되도록 제어하고, 상기 환원 가스 공급 공정과 상기 텅스텐 가스 공급 공정을 교대로 반복하여 실행하도록 하여 초기 텅스텐막을 형성하도록 한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 반복되는 환원 가스 공급 공정 중 최초의 환원 가스 공급 공정에 있어서의 환원 가스의 부분 압력과 공급 시간과의 곱에 의해서 이루어지는 파라미터를, 다른 환원 가스 공급 공정의 파라미터보다 커지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 초기 텅스텐막을 형성하는 공정에 있어서, 상기 반복되는 환원 가스 공급 공정 중 최초의 환원 가스 공급 공정에 있어서의 환원 가스의 공급 시간을 다른 환원 가스 공급 공정의 공급 시간보다 길어지도록 설정한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 초기 텅스텐막의 형성공정과 상기 패시베이션 텅스텐막 형성 공정은 프로세스 압력과 프로세스 온도 중 적어도 어느 한쪽이 실질적으로 동일한 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 주 텅스텐막 형성 공정에서는 상기 패시베이션 텅스텐막 형성 공정과 비교하여 프로세스 압력과 프로세스 온도 중 적어도 어느 한쪽이 실질적으로 높게 설정되어 있는 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 텅스텐 함유 가스는 WF6가스와 유기 텅스텐 소스 가스 중 어느 하나인 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 환원 가스는 H2가스, 실란(SiH4), 디실란(Si2H6), 디클로로 실란(SiH2Cl2), 디보란(B2H6), 포스핀(PH3) 중 어느 하나로 이루어지는 것을 특징으로 하는텅스텐막의 형성 방법.
- 제 13 항에 있어서,상기 텅스텐 함유 가스는 WF6가스이며, 상기 환원 가스는 초기 텅스텐막의 형성공정에서는 SiH4가스이며, 상기 패시베이션 텅스텐막의 형성공정과 상기 주 텅스텐막 형성공정에서는 H2가스인 것을 특징으로 하는텅스텐막의 형성 방법.
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JP4032872B2 (ja) * | 2001-08-14 | 2008-01-16 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
JP3956049B2 (ja) | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
US6924223B2 (en) | 2003-09-30 | 2005-08-02 | Tokyo Electron Limited | Method of forming a metal layer using an intermittent precursor gas flow process |
JP4945937B2 (ja) * | 2005-07-01 | 2012-06-06 | 東京エレクトロン株式会社 | タングステン膜の形成方法、成膜装置及び記憶媒体 |
KR100939777B1 (ko) * | 2007-11-30 | 2010-01-29 | 주식회사 하이닉스반도체 | 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법 |
JP2010093116A (ja) * | 2008-10-09 | 2010-04-22 | Panasonic Corp | 半導体装置及び半導体装置の製造方法 |
CN102265383B (zh) * | 2008-12-31 | 2014-06-11 | 应用材料公司 | 用于沉积具有降低电阻率及改良表面形态的钨膜的方法 |
JP5710529B2 (ja) | 2011-09-22 | 2015-04-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5959991B2 (ja) | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
JP5925476B2 (ja) * | 2011-12-09 | 2016-05-25 | 株式会社アルバック | タングステン化合物膜の形成方法 |
CN103367161A (zh) * | 2012-03-31 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管的形成方法 |
KR102298605B1 (ko) * | 2015-01-14 | 2021-09-06 | 삼성전자주식회사 | 수직형 메모리 장치 및 이의 제조 방법 |
JP6706903B2 (ja) * | 2015-01-30 | 2020-06-10 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
CN105839068B (zh) | 2015-01-30 | 2018-09-21 | 东京毅力科创株式会社 | 钨膜的成膜方法 |
JP6416679B2 (ja) * | 2015-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
CN107924829B (zh) * | 2015-09-30 | 2021-07-23 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置及记录介质 |
JP6755164B2 (ja) | 2016-11-14 | 2020-09-16 | 東京エレクトロン株式会社 | TiN系膜およびその形成方法 |
CN107481926A (zh) * | 2017-08-31 | 2017-12-15 | 长江存储科技有限责任公司 | 一种金属钨的填充方法 |
JP6979888B2 (ja) | 2018-01-18 | 2021-12-15 | 東京エレクトロン株式会社 | タングステン膜の成膜方法及び成膜システム |
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US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
US5599739A (en) * | 1994-12-30 | 1997-02-04 | Lucent Technologies Inc. | Barrier layer treatments for tungsten plug |
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US6309966B1 (en) * | 1999-09-03 | 2001-10-30 | Motorola, Inc. | Apparatus and method of a low pressure, two-step nucleation tungsten deposition |
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US6660330B2 (en) * | 2001-04-10 | 2003-12-09 | International Business Machines Corporation | Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support |
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