KR20060096373A - 압전 소자 및 그 제조 방법 - Google Patents
압전 소자 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20060096373A KR20060096373A KR20060020584A KR20060020584A KR20060096373A KR 20060096373 A KR20060096373 A KR 20060096373A KR 20060020584 A KR20060020584 A KR 20060020584A KR 20060020584 A KR20060020584 A KR 20060020584A KR 20060096373 A KR20060096373 A KR 20060096373A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- piezoelectric
- electrode
- electrode film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 423
- 238000000034 method Methods 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000001514 detection method Methods 0.000 claims abstract description 70
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 230000008569 process Effects 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000002425 crystallisation Methods 0.000 claims abstract description 13
- 230000008025 crystallization Effects 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims description 103
- 239000010936 titanium Substances 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 21
- 238000001039 wet etching Methods 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 20
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 16
- 229910001882 dioxygen Inorganic materials 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 34
- 238000005530 etching Methods 0.000 description 31
- 239000010949 copper Substances 0.000 description 25
- 238000000137 annealing Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 238000000992 sputter etching Methods 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VHFBTKQOIBRGQP-UHFFFAOYSA-N fluoro nitrate Chemical compound [O-][N+](=O)OF VHFBTKQOIBRGQP-UHFFFAOYSA-N 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5663—Manufacturing; Trimming; Mounting; Housings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20409—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Remote Sensing (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Gyroscopes (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2005-00061695 | 2005-03-04 | ||
| JPJP-P-2005-00061694 | 2005-03-04 | ||
| JPJP-P-2005-00061696 | 2005-03-04 | ||
| JP2005061695 | 2005-03-04 | ||
| JP2005061694 | 2005-03-04 | ||
| JP2005061696 | 2005-03-04 | ||
| JPJP-P-2005-00190234 | 2005-06-29 | ||
| JP2005190234 | 2005-06-29 | ||
| JPJP-P-2005-00378321 | 2005-12-28 | ||
| JP2005378321A JP2007043054A (ja) | 2005-03-04 | 2005-12-28 | 圧電素子及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060096373A true KR20060096373A (ko) | 2006-09-11 |
Family
ID=36599295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20060020584A Withdrawn KR20060096373A (ko) | 2005-03-04 | 2006-03-03 | 압전 소자 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7583012B2 (enExample) |
| EP (1) | EP1699092A3 (enExample) |
| JP (1) | JP2007043054A (enExample) |
| KR (1) | KR20060096373A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5037819B2 (ja) * | 2005-03-04 | 2012-10-03 | ソニー株式会社 | 電子機器 |
| JP2006341956A (ja) * | 2005-06-09 | 2006-12-21 | Otis Elevator Co | エレベータシステム |
| US7946173B2 (en) * | 2005-11-08 | 2011-05-24 | Panasonic Corporation | Angular velocity sensor and process for producing the same |
| US7696676B2 (en) * | 2006-12-18 | 2010-04-13 | Lockheed Martin Corporation | Piezoelectric composite apparatus and related methods |
| JP5288530B2 (ja) * | 2007-03-30 | 2013-09-11 | 富士フイルム株式会社 | 圧電素子製造方法及び液体吐出ヘッド製造方法 |
| US7915794B2 (en) * | 2007-11-15 | 2011-03-29 | Sony Corporation | Piezoelectric device having a tension stress, and angular velocity sensor |
| KR100975010B1 (ko) * | 2008-02-29 | 2010-08-09 | 성균관대학교산학협력단 | 다중 크기 압전 마이크로 칸티레버 공진자 어레이를 이용한 물리센서 및 그 제작방법 |
| JP5410686B2 (ja) * | 2008-03-21 | 2014-02-05 | 富士フイルム株式会社 | 圧電体膜の製造方法、成膜装置および圧電体膜 |
| FR2932192B1 (fr) * | 2008-06-09 | 2011-01-21 | Sagem Defense Securite | Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu |
| US9035253B2 (en) | 2008-06-27 | 2015-05-19 | Panasonic Intellectual Property Managment Co., Ltd. | Infrared sensor element |
| WO2009157189A1 (ja) * | 2008-06-27 | 2009-12-30 | パナソニック株式会社 | 圧電体素子とその製造方法 |
| JP4640459B2 (ja) | 2008-07-04 | 2011-03-02 | ソニー株式会社 | 角速度センサ |
| JP4582235B2 (ja) * | 2008-10-31 | 2010-11-17 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
| JP2010135748A (ja) * | 2008-11-04 | 2010-06-17 | Seiko Epson Corp | 圧電素子及びその製造方法、液体噴射ヘッド及びその製造方法、並びに液体噴射装置 |
| JP5581781B2 (ja) * | 2010-04-06 | 2014-09-03 | セイコーエプソン株式会社 | 圧電アクチュエーターの製造方法 |
| KR101677297B1 (ko) | 2010-12-21 | 2016-11-29 | 한국전자통신연구원 | 압전 마이크로 에너지 수확기 및 이의 제조 방법 |
| JP6044101B2 (ja) | 2012-04-10 | 2016-12-14 | セイコーエプソン株式会社 | センサーデバイス、センサーデバイスの製造方法および電子機器 |
| JP6341446B2 (ja) * | 2014-03-13 | 2018-06-13 | 株式会社リコー | 電気機械変換素子の製造方法、電気機械変換素子、液滴吐出ヘッド、液滴吐出装置及び画像形成装置 |
| JP7421178B2 (ja) * | 2020-02-20 | 2024-01-24 | 国立大学法人大阪大学 | 振動検出素子およびその製造方法 |
| WO2022174440A1 (zh) * | 2021-02-22 | 2022-08-25 | 京东方科技集团股份有限公司 | 压电元件、压电振动器及其制作和驱动方法、电子设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500988A (en) * | 1990-11-20 | 1996-03-26 | Spectra, Inc. | Method of making a perovskite thin-film ink jet transducer |
| US5802684A (en) * | 1993-09-14 | 1998-09-08 | Nikon Corporation | Process for producing a vibration angular-velocity sensor |
| JP4122564B2 (ja) * | 1998-04-24 | 2008-07-23 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法 |
| JP2000357826A (ja) * | 1999-04-13 | 2000-12-26 | Seiko Epson Corp | 圧電体素子の製造方法、圧電体素子、インクジェット式記録ヘッドおよびプリンタ |
| US6362558B1 (en) * | 1999-12-24 | 2002-03-26 | Kansai Research Institute | Piezoelectric element, process for producing the same and ink jet recording head |
| US20070046153A1 (en) * | 2005-08-23 | 2007-03-01 | Canon Kabushiki Kaisha | Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus |
| US7456548B2 (en) * | 2006-05-09 | 2008-11-25 | Canon Kabushiki Kaisha | Piezoelectric element, piezoelectric actuator, and ink jet recording head |
-
2005
- 2005-12-28 JP JP2005378321A patent/JP2007043054A/ja not_active Abandoned
-
2006
- 2006-03-03 US US11/367,996 patent/US7583012B2/en not_active Expired - Fee Related
- 2006-03-03 EP EP20060004396 patent/EP1699092A3/en not_active Withdrawn
- 2006-03-03 KR KR20060020584A patent/KR20060096373A/ko not_active Withdrawn
-
2008
- 2008-05-19 US US12/123,109 patent/US20080222865A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20060197415A1 (en) | 2006-09-07 |
| JP2007043054A (ja) | 2007-02-15 |
| US7583012B2 (en) | 2009-09-01 |
| EP1699092A2 (en) | 2006-09-06 |
| US20080222865A1 (en) | 2008-09-18 |
| EP1699092A3 (en) | 2010-02-24 |
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