FR2932192B1 - Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu - Google Patents

Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu

Info

Publication number
FR2932192B1
FR2932192B1 FR0803185A FR0803185A FR2932192B1 FR 2932192 B1 FR2932192 B1 FR 2932192B1 FR 0803185 A FR0803185 A FR 0803185A FR 0803185 A FR0803185 A FR 0803185A FR 2932192 B1 FR2932192 B1 FR 2932192B1
Authority
FR
France
Prior art keywords
coating
metallizing
vibrating member
vibrant
vibrating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0803185A
Other languages
English (en)
Other versions
FR2932192A1 (fr
Inventor
Michel Poirier
Paul Vandebeuque
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Safran Electronics and Defense SAS
Original Assignee
Sagem Defense Securite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem Defense Securite SA filed Critical Sagem Defense Securite SA
Priority to FR0803185A priority Critical patent/FR2932192B1/fr
Priority to PCT/FR2009/000681 priority patent/WO2010000969A1/fr
Publication of FR2932192A1 publication Critical patent/FR2932192A1/fr
Application granted granted Critical
Publication of FR2932192B1 publication Critical patent/FR2932192B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
    • G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
FR0803185A 2008-06-09 2008-06-09 Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu Active FR2932192B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0803185A FR2932192B1 (fr) 2008-06-09 2008-06-09 Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu
PCT/FR2009/000681 WO2010000969A1 (fr) 2008-06-09 2009-06-09 Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0803185A FR2932192B1 (fr) 2008-06-09 2008-06-09 Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu

Publications (2)

Publication Number Publication Date
FR2932192A1 FR2932192A1 (fr) 2009-12-11
FR2932192B1 true FR2932192B1 (fr) 2011-01-21

Family

ID=40380248

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0803185A Active FR2932192B1 (fr) 2008-06-09 2008-06-09 Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu

Country Status (2)

Country Link
FR (1) FR2932192B1 (fr)
WO (1) WO2010000969A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0174594B1 (ko) * 1994-11-26 1999-04-01 이재복 실리콘 웨이퍼상에 백금 박막을 형성하는 방법, 그 방법에 의하여 제조된 실리콘 기판 및 그 기판을 이용한 반도체 소자
US6025205A (en) * 1997-01-07 2000-02-15 Tong Yang Cement Corporation Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen
US6291345B1 (en) * 1998-07-27 2001-09-18 Honeywell International Inc. Controlled-stress stable metallization for electronic and electromechanical devices
US6647785B2 (en) * 2001-07-27 2003-11-18 Litton Systems, Inc. Nuclear radiation hard high accuracy rotation sensor system
US7168318B2 (en) * 2002-08-12 2007-01-30 California Institute Of Technology Isolated planar mesogyroscope
FR2851041B1 (fr) * 2003-02-06 2005-03-18 Sagem Procede de mise en oeuvre d'un resonateur sous l'effet de forces electrostatiques
JP4058018B2 (ja) * 2003-12-16 2008-03-05 松下電器産業株式会社 圧電素子及びその製造方法、並びにその圧電素子を備えたインクジェットヘッド、インクジェット式記録装置及び角速度センサ
EP1744377B1 (fr) * 2004-03-05 2011-04-20 Panasonic Corporation Élément piézoélectrique, tête d'impression jet d'encre, capteur de vitesse angulaire, procédés de fabrication de ceux-ci et dispositif d'enregistrement a jet d'encre
JP2007043054A (ja) * 2005-03-04 2007-02-15 Sony Corp 圧電素子及びその製造方法

Also Published As

Publication number Publication date
FR2932192A1 (fr) 2009-12-11
WO2010000969A1 (fr) 2010-01-07

Similar Documents

Publication Publication Date Title
TW200726336A (en) Ceramic substrate, electronic device, and manufacturing method of ceramic substrate
WO2011154360A3 (fr) Circuit integre a dispositif de type fet sans jonction et a depletion
WO2009069670A1 (fr) Dispositif d'inspection de microstructure et procédé d'inspection de microstructure
MY147005A (en) Method for bonding a semiconductor substrate to a metal subtrate
TW200703461A (en) Glass-based semiconductor on insulator structures and methods of making same
TW200610205A (en) Organic semiconductor device and manufacturing method thereof
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
TW200511575A (en) Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device
GB2462845B (en) Organic electronic devices and methods of making the same using solution processing techniques
TW200515472A (en) Microelectromechanical system and method for fabricating the same
WO2009019837A1 (fr) Dispositif à semi-conducteur de carbure de silicium et son procédé de production
EP1837087A3 (fr) Transducteur ultrasonique, sonde ultrasonique et leur procédé de fabrication
TW200739684A (en) Semiconductor device and method for fabricating the same
SG155152A1 (en) Integrated circuit system employing resistance altering techniques
TW200501340A (en) Conductor substrate, semiconductor device and production method thereof
TW200636822A (en) Structure and method for manufacturing strained silicon directly-on insulator substrate with hybrid crystalling orientation and different stress levels
ITTO20080540A1 (it) Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione
SG159517A1 (en) Integrated circuit system employing gate shield and/or ground shield
EP2560194A4 (fr) Dispositif semi-conducteur en carbure de silicium et son procédé de fabrication
TW200609549A (en) Optical waveguide mounting member, substrate, semiconductor device, method of manufacturing optical waveguide mounting member, and method of manufacturing substrate
WO2013011127A3 (fr) Module thermoélectrique, procédé de fabrication d'un module thermoélectrique et utilisation d'un verre métallique ou d'un matériau fritté
TW200629378A (en) Semiconductor wafer having a silicon-germanium layer, and a method for its production
FR2932192B1 (fr) Procede de metallisation d'une calotte vibrante et capteur vibrant obtenu
MD3579C2 (ro) Procedeu de obţinere a microfirelor semimetalice de bismut în izolaţie de sticlă de molibden
TW200618083A (en) Deposition of hard-mask with minimized hillocks and bubbles

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

CD Change of name or company name

Owner name: SAFRAN ELECTRONICS & DEFENSE, FR

Effective date: 20170111

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16